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    显示项目13501-13525 / 81569. (共3263页)
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    日期题名作者
    2008 An electric resistivity study of the Chelungpu fault in the Taichung area, Taiwan Cheng,Ping-Hu; Ger,Yueh-Iuan; Lee,Szu-Lin
    2002 An electric resistivity study of the Chelungpu fault in the Tsaotun area, central Taiwan Cheng,PH; Yang,CH; You,JI; Shieh,JS
    1987 ELECTRIC-FIELD ENHANCEMENT NEAR-SURFACE IRREGULARITIES LEE,FT; LEE,KC; LAI,SK; CHENG,YS; HSU,TM
    2003 Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Overberg,ME; Thaler,GT; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM
    1997 Electrical and luminescent characteristics of alpha-SiC:H p-i-n thin-film LED's with graded-gap junctions Jen,TS; Shin,NF; Laih,LH; Chen,YA; Hong,JW; Chang,CY
    2004 Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Frazier,RM; Gila,BP; Abernathy,CR; Pearton,SJ; Buyanova,IA; Rudko,GY; Chen,WM; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM
    1989 ELECTRICAL AND MAGNETIC STUDIES ON GRAIN-BOUNDARY SEGREGATION IN A NI-3AT.PERCENT-SN ALLOY YAO,YD; CHUANG,TH; LEE,CK
    1999 Electrical and optical changes in the near surface of reactively ion etched n-GaN Chen,JY; Pan,CJ; Chi,GC
    2000 Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer Yang,CC; Wu,MC; Chuo,CC; Chyi,JI; Lin,CF; Chi,GC
    2008 Electrical and optical properties of TiO2-doped ZnO films prepared by radio-frequency magnetron sputtering Chung,Jeng-Lin; Chen,Jyh-Chen; Tseng,Chung-Jen
    2003 Electrical characteristics of a-SiGe : H thin-film transistors with Sb/Al binary alloy Schottky source/drain contact Lin,CS; Yeh,RH; Li,IX; Hong,JW
    1998 Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers Sheu,JK; Su,YK; Chang,SJ; Chi,GC; Lin,KB; Liu,CC; Chiu,CC
    2001 Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chou,CC; Lee,CM
    2007 Electrical structures of the source area of the 1999 Chi-Chi, Taiwan, earthquake: Spatial correlation between crustal conductors and aftershocks Chen,Chien-Chih; Chi,Sung-Ching; Chen,Chow-Son; Yang,Chieh-Hou
    2006 Electrical transport properties of single GaN and InN nanowires Chih-Yang Chang,Gou-Chung Chi,Wei-Ming Wang,Li-Chyong Chen ,Kuei-Hsien Chen,F. Ren and S. J. Pearton
    1994 ELECTRICAL-DISCHARGE MACHINING CHARACTERISTICS OF CONDUCTIVE ALUMINA-BASED CERAMICS YAN,BH; TSAI,DC
    2003 Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry Ting,YS; Chen,CC; Sheu,JK; Chi,GC; Hsu,JT
    2009 Electrical-optical analysis of a GaN/sapphire LED chip by considering the resistivity of the current-spreading layer Chen,JC; Sheu,GJ; Hwu,FS; Chen,HI; Sheu,JK; Lee,TX; Sun,CC
    2011 Electrically controllable metal-insulator-like transition in nanoparticle compacts Wang,CW; Wu,CM; Karna,SK; Li,CY; Hsu,CK; Li,CHC; Li,WH
    1997 Electrically nulled interferometric sensor based on triangular phase modulation Chien,PY; Chang,YS; Chang,MW
    2011 Electrically tunable liquid crystal waveguide attenuators Cai,DP; Nien,SC; Chiu,HK; Chen,CC; Lee,CC
    2005 Electrically-driven spontaneous emission spectrum of a single quantum dot Kuo,DMT; Chang,YC
    2011 Electro-catalytic activity enhancement of Pd-Ni electrocatalysts for the ethanol electro-oxidation in alkaline medium: The promotional effect of CeO(2) addition Wei,YC; Liu,CW; Kang,WD; Lai,CM; Tsai,LD; Wang,KW
    2000 Electro-kinetic removal of oil from a contaminated soil Yeh,KL; Wu,RS
    2010 Electro-optic guided-to-radiation mode conversion in annealed proton-exchanged PPLN waveguides Chang,JW; Chen,YH; Tseng,QH; Chang,WK; Deng,SL; Hsieh,CS
    显示项目13501-13525 / 81569. (共3263页)
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