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顯示項目65351-65400 / 81569. (共1632頁) << < 1303 1304 1305 1306 1307 1308 1309 1310 1311 1312 > >> 每頁顯示[10|25|50]項目

日期	題名	作者
2006-06-10	破產宣告對其上下游產業之市場反應; The Impact of Bankruptcy Announcements on Their Suppliers and Customers	蘇姿寬; Chih-Kuan Su
2004-06-18	破產宣告對破產公司及其同業的衝擊-日內分析; The Impact of Bankruptcy Announcements on Bankrupt Firms and Their Competitors- An Intraday Analysis	廖哲毅; Che-I Liao
2019-05-30	破產法免責制度之研究─以債務清理法草案為中心	陳美蓮; Chen, Mei-Lien
1999-09-01	破裂帶對地震波影響之三維物理模型研究(III);A 3D Physical Modeling Study for the Effects of Fractural Zone on Wave Propagation (III)	謝昭輝
2014-09-10	破除明星高中?以福利分析探討台灣十二年國教;Should Prestigious High Schools Stay? a Welfare Analysis on Taiwan 12-Year Compulsory Education System	曹真睿
2003-07-04	砷化物抑制Galectin-1基因之表現及機制之研究; The mechanism of arsenic inhibit galectin-1 gene expression.	潘雅芳; Ya-Fang Pan
1999-09-01	砷化物於人類口腔表皮癌細胞結合蛋白質之研究	黃榮南
2012-07-04	砷化物結合蛋白之研究;The study of arsenic-binding proteins	張鈺媖; Chang,Yu-Ying
2000-09-01	砷化物結合蛋白質之研究(I)	黃榮南
2000-09-01	砷化物結合蛋白質之研究(II)	黃榮南
2002-07-01	砷化物結合蛋白質之研究(III); The Study of Arsenic Binding Proteins (III)	黃榮南
2003-07-04	砷化物誘導Thioredoxin Peroxidase II蛋白之表現及機制之研究;The mechanism of Arsenic induce Thioredoxin Peroxidase II expression	林佩蓉; Pei-Jung Lin
2009-07-03	砷化銦/銻化鋁金屬-氧化物-半導體高電子遷移率電晶體之發展; Development of InAs/AlSb Metal-Oxide-Semiconductor HEMT	范大偉; Da-Wei Fan
2011-09-22	砷化銦/銻化鋁高電子遷移率場效電晶體之次微米元件製程改善與元件衰化機構分析; Development of Submicron Device Processes and Analysis of Device Degradation Mechanisms for InAs/AlSb HEMTs	劉弘凱; Hong-Kai Liu
2010-08-10	砷化銦/銻化鋁高電子遷移率場效電晶體之鈍化製程發展與元件特性研究 ; Passivation Process Development and Device Characterization for InAs/AlSb High Electron Mobility Transistors	何偉誌; Wei-Zhi He
2009-07-03	砷化銦/銻化鋁高電子遷移率場效電晶體製程開發與元件特性之研究; Device Fabrication and Characterization of InAs/AlSb High Electron Mobility Transistors	林育昭; Yu-Chao Lin
2018-08-22	砷化銦與銻化鎵金氧半電容之界面特性研究;Characterization of the Interface of InAs and GaSb Metal-Oxide-Semiconductor Capacitors	薛惟仁; Hsueh, Wei-Jen
2005-07-10	砷化銦量子點在二維光子晶體中共振模態之光學特性研究	潘妍潔; Yen-Chieh Pan
2001-07-10	砷化銦量子點異質結構與雷射; InAs/GaAs quantum dot heterostructures and lasers	葉念慈; Nien-Tze Yeh
1996-09-01	砷化銦鋁/磷化銦異質結構之成長與應用;Growth and Applications of InAlGaAs/InP Heterostructures	綦振瀛
2021-08-25	砷化銦鎵/砷化銦鋁單光子崩潰二極體 元件製作及適當電荷層濃度模擬分析;Fabrication and Suitable Charge Doping Studies of InGaAs/InAlAs Single Photon Avalanche Diodes	林秀鳳; LIN, HSIU-FENG
2018-11-21	砷化銦鎵/砷化銦鋁單光子崩潰二極體的設計與特性探討;Design and Characteristics of InGaAs/InAlAs Single-photon Avalanche Diodes	張世承; Chang, Shih-Cheng
2020-01-09	砷化銦鎵/砷化銦鋁平台式雙累增層單光子崩潰二極體的設計與其特性;Design and Characteristics of Mesa-type InGaAs/InAlAs Single-Photon Avalanche Diodes with Dual Multiplication Layers	陳昱嘉; Chen, Yu-Jia
2020-01-21	砷化銦鎵/砷化鋁銦單光子崩潰二極體陣列 之光學串擾模擬;Simulation of Optical Crosstalk in InGaAs/InAlAs Single Photon Avalanche Diode Array	鄭民安; Zheng, Ming-An
2007-10-02	砷化銦鎵/砷化鎵量子點光發射源; In(Ga)As/GaAs Quantum Dot Light Sources	謝東坡; Tung-Po Hsieh
2018-11-22	砷化銦鎵/磷化銦單光子崩潰二極體暗與光特性分析;Dark and Illumination Characteristics of InGaAs/InP Single Photon Avalanche Diodes	簡盛宥; Chien, Sheng-Yu
2019-10-31	砷化銦鎵/磷化銦單光子崩潰二極體正弦波 閘控模式之暗與光特性分析;Dark and Illumination Characteristics Analysis of InGaAs/InP Single Photon Avalanche Diodes Using Sinusoidal Wave Gating	許瑞祥; Hsu, Jui-Hsiang
2017-10-12	砷化銦鎵/磷化銦單光子雪崩型偵測器暗計數特性分析;Study of the Dark Count Characteristics of InGaAs/InP Single Photon Avalanche Detectors	陳冠宇; Chen, Kuan-Yu
2018-01-29	砷化銦鎵/銻砷化鎵第二型異質接面P通道穿隧場效電晶體之設計與模擬;Design and Simulation of P-channel InGaAs/GaAsSb Staggered Hetero-Junction Tunneling Field-Effect Transistors	陳妗仰; Chen, Jin-Yang
2000-07-19	砷化銦鎵的電性研究與平面型PIN光偵測器的製作; Electrical properties of InGaAs and the fabrication of AlInGaAs/InGaAs/InP laterial PIN photodetectors	周冠羽; K-Y Chou
2014-08-19	砷化銦鎵穿隧式場效電晶體元件製作與特性研究	彭良軒; Peng,Liang-Shuan
2009-06-23	砷化銦鎵自聚性量子點的單光子輻射特性; Single photon emission properties of InGaAs self-assembled dots	張翔思; Hsiang-Szu Chang
2007-06-21	砷化銦鎵量子點在砷化鎵多面體結構之光學性質研究; Optical properties of InGaAs quantum dots on a GaAs multi-facet structure	許傑閔; Chieh-Ming Hsu
2007-06-28	砷化銦鎵量子點與二維光子晶體共振腔之耦合效應研究; Investigation of coupling effects of InGaAs quantum dots in two-dimensional photonic crystal nanocavities	陳文彥; Wen-yen Chen
2001-07-05	砷化鋁鎵/砷化鎵異質接面雙極性電晶體之研製及壓控振盪器設計與製程	王瑞慶; Ruan-Qing Wang
2007-07-02	砷化鎵代工廠磊晶之最適存貨管理-以W公司為例; The best epi inventory management in GaAs foundry service	敖國玉; Kuo-Yu Ao
2005-06-16	砷化鎵光子晶體共振腔研究; The research of GaAs photonic crystal resonator	王謀賢; Mou-Sian Wang
2001-07-05	砷化鎵基體異質接面雙極性電晶體之研製與其在積體化功率放大器之應用; GaAs based HBTs and their applications in power amplifier	蘇世宗; Shih-tzung Su
2001-07-16	砷化鎵場效電晶體表面氧離子佈植和自我校準技術之研究; GaAs MESFET with Surface Oxygen Implantation and Self-Aligned Technology	薛光博; Kuang-Po Hsueh
2007-06-14	砷化鎵增強/空乏型雙閘極高電子遷移率電晶體於微波/毫米波放大器設計; Microwave/Millimeter-wave Amplifier Design using GaAs Enhancement/Depletion Mode Dual-Gate pHEMT	蔡友益; Yu-Yi Tsai
2008-07-02	砷化鎵異質接面光電晶體應用於血清蛋白濃度偵測; Photo-transistor Biosensor for Detection of BSA Concentration	吳建德; Jian-de Wu
2021-10-25	砷化鎵異質整合及矽基毫米波輻射計接收機暨氮化鎵功率放大器之研製;Design of Radiometer Receiver Using GaAs & CMOS Process and Power Amplifier Using GaN Process	賴仕豪; Lai, Shih-hao
2008-07-01	砷化鎵積體電路於微波及毫米波雷達應用之研究---子計畫一：砷化鎵多閘極高遷移率場效電晶體模型及其高頻電路之研究(I); Research on GaAs Multi-Gate Phemt Modeling and Its Application of the High-Frequency Circuits(I)	詹益仁
2008-07-01	砷化鎵積體電路於微波及毫米波雷達應用之研究---子計畫三：砷化鎵微波及毫米波被動元件設計與電磁模擬分析(I); GaAs Microwave and Millimeter-Wave Passive Component Designs and Electromagnetic Analysis(I)	林祐生
2008-07-01	砷化鎵積體電路於微波及毫米波雷達應用之研究---子計畫二：應用於汽車雷達之砷化鎵微波及毫米波積體電路研製(I); Research and Development on GaAs Microwave and Millimeter-Wave Monolithic Integrated Circuits for Automobile Radar Applications(I)	張鴻埜
2008-07-01	砷化鎵積體電路於微波及毫米波雷達應用之研究---子計畫四：測速雷達之中頻頻率至數位轉換器積體電路設計(I); Design of Intermediate Frequency to Digital Converter Integrated Circuits for Automobile Rader (I)	蘇純賢
2008-07-01	砷化鎵積體電路於微波及毫米波雷達應用之研究---總計畫; Research on GaAs Integrated Circuit for Microwave and Millimeter-Wave Radar Applications	詹益仁; 林祐生; 蘇純賢; 張鴻埜
2002-07-01	砷化鎵自聚性量子點的光電特性研究; Electric and Optical Properties of InAs Self-Assembled Quantum Dots	徐子民
2001-07-09	砷化鎵金屬半導體場效電晶體中p型埋藏層之效應; Effects of Buried p-Layer for GaAs MESFET’s	武良文; Lian-Wen Wu
2018-08-01	砷化鎵銦/砷化鋁銦單光子雪崩偵測器開發與應用 ;Developments and Applications of Ingaas/Inalas Single Photon Avalanche Diodes	李依珊; 林聖迪

顯示項目65351-65400 / 81569. (共1632頁) << < 1303 1304 1305 1306 1307 1308 1309 1310 1311 1312 > >> 每頁顯示[10|25|50]項目