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    顯示項目19051-19075 / 81569. (共3263頁)
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    日期題名作者
    2010 Nitride-based blue light-emitting diodes with multiple Mg(x)N(y)/GaN buffer layers Fu,YK; Kuo,CH; Tun,CJ; Chang,LC
    2002 Nitride-based cascade near white light-emitting diodes Chen,CH; Chang,SJ; Su,YK; Sheu,JK; Chen,JF; Kuo,CH; Lin,YC
    2003 Nitride-based green light-emitting diodes with high temperature GaN barrier layers Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Wen,TC; Kuo,CH; Lai,WC; Chang,CS; Tsai,JM; Sheu,JK
    2004 Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers Chang,SJ; Wu,LW; Su,YK; Hsu,YP; Lai,WC; Tsai,JA; Sheu,JK; Lee,CT
    2004 Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact Chang,SJ; Chang,CS; Su,YK; Chuang,RW; Lai,WC; Kuo,CH; Hsu,YP; Lin,YC; Shei,SC; Lo,HM; Ke,JC; Sheu,JK
    2005 Nitride-based LEDs with ITO on nanostructured silicon contact layers Kuo,CH; Chang,SJ; Chen,SC
    2004 Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures Wen,TC; Chang,SJ; Lee,CT; Lai,WC; Sheu,JK
    2003 Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Chen,JF; Shen,JK; Tsai,JM
    2005 Nitride-based light-emitting diodes with p-AlInGaN surface layers Kuo,CH; Lin,CC; Chang,SJ; Hsu,YP; Tsai,JM; Lai,WC; Wang,PT
    2006 Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures Kuo,C. H.; Kuo,C. W.; Chen,C. M.; Pong,B. J.; Chi,G. C.
    2004 Nitride-based near-ultraviolet LEDs with an ITO transparent contact Kuo,CH; Chang,SJ; Su,Y; Chuang,RW; Chang,CS; Wu,LW; Lai,WC; Chen,JF; Sheu,J; Lo,HM; Tsai,JM
    2007 Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN Kuo,C. H.; Feng,H. C.; Kuo,C. W.; Chen,C. M.; Wu,L. W.; Chi,G. C.
    2007 Nitride-based near-ultraviolet mesh MQW light-emitting diodes Kuo,C. H.; Feng,H. C.
    2003 Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Chen,SC
    2006 Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communications Shi,JW; Huang,HY; Shell,JK; Hsieh,SH; Wu,YS; Lu,JY; Huang,FH; Lai,WC
    2003 Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer Sheu,JK; Kao,CJ; Lee,ML; Lai,WC; Yeh,LS; Chi,GC; Chang,SJ; Su,YK; Tsa,JM
    2003 Nitrification efficiency and nitrifying bacteria abundance in combined AS-RBC and A2O systems You,SJ; Chuang,SH; Ouyang,CF
    2000 Nitrobenzene hydrogenation on Ni-P, Ni-B, and Ni-P-B ultrafine materials Lee,SP; Chen,YW
    1994 NITROBENZENE HYDROGENATION OVER ALUMINUM BORATE-SUPPORTED PLATINUM CATALYST LI,CP; CHEN,YW; WANG,WJ
    2010 Nitrogen as the carrier gas for helium emission along an active fault in NW Taiwan Hong,WL; Yang,TF; Walia,V; Lin,SJ; Fu,CC; Chen,YG; Sano,Y; Chen,CH; Wen,KL
    2001 Nitrogen removal from activated sludge process (ASP) treated municipal wastewater by biofilm channeling Hsu,CL; Ouyang,CF; Weng,HT
    2009-07-09 Ni添加對Mg17Al12合金吸放氫性質影響之研究; The effect of Ni addition on hydrogen storage properties of Mg17Al12 alloy 翁加旺; Chia-wang Weng
    2008-07-01 NMDA受體活性中的代腦啡(Dynorphin)循環研究; Study of Dynorphin Cycle in NMDA Receptor Activity 李弘謙
    2000 NMR properties of poly(dimethyl siloxane) colloids as new contrast agents for NMR imaging Su,FH; Shyu,SS; Chen,YC
    1997 NMR spin-lattice relaxation time distribution: A novel method for the study of polymer blends. Chu,PP; Liu,SH; Liu,HW
    顯示項目19051-19075 / 81569. (共3263頁)
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