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顯示項目251-260 / 951. (共96頁)
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題名
作者
2006
Frequency tunability of terahertz photonic transmitters
Kao,TF
;
Chang,HH
;
Chen,LJ
;
Lu,JY
;
Liu,AS
;
Yu,YC
;
Wu,RB
;
Liu,WS
;
Chyi,JI
;
Sun,CK
2006
Growth of gallium nitride nanorods by metalorganic molecular beam epitaxy
Kuo,SY
;
Kei,CC
;
Hsiao,CN
;
Chao,CK
2006
Photoexcitation effects on charge transports of Ge quantum-dot resonant tunneling diodes
Li,P. W.
;
Kuo,David M. T.
;
Hsu,Y. C.
2006
Growth of low density InGaAs quantum dots for single photon sources by metal-organic chemical vapour deposition
Hsieh,TP
;
Chang,HS
;
Chen,WY
;
Chang,WH
;
Hsu,TM
;
Yeh,NT
;
Ho,WJ
;
Chiu,PC
;
Chyi,JI
2006
Improving the compression and encryption of images using FPGA-based cryptosystems
Ou,SC
;
Chung,HY
;
Sung,WT
2006
Leaky-wave photodiodes with a partially p-doped absorption layer and a distributed Bragg reflector (DBR) for high-power and high-bandwidth-responsivity product performance
Chiu,WY
;
Shi,JW
;
Wang,WK
;
Wu,YS
;
Chan,YJ
;
Huang,YL
;
Xuan,R
2006
Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer
Hsueh,KP
;
Hsin,YM
;
Sheu,JK
2006
Quasi-constant-sensitivity VCO with offset-tuning PN junction varactor array
Lee SH,?Chiang YT,?Chiou HK
2006
Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communications
Shi,JW
;
Huang,HY
;
Shell,JK
;
Hsieh,SH
;
Wu,YS
;
Lu,JY
;
Huang,FH
;
Lai,WC
2006
Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs
Liao,YS
;
Shi,JW
;
Wu,YS
;
Kuo,HC
;
Feng,M
;
Lin,GR
顯示項目251-260 / 951. (共96頁)
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