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    顯示項目251-260 / 951. (共96頁)
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    日期題名作者
    2006 Frequency tunability of terahertz photonic transmitters Kao,TF; Chang,HH; Chen,LJ; Lu,JY; Liu,AS; Yu,YC; Wu,RB; Liu,WS; Chyi,JI; Sun,CK
    2006 Growth of gallium nitride nanorods by metalorganic molecular beam epitaxy Kuo,SY; Kei,CC; Hsiao,CN; Chao,CK
    2006 Photoexcitation effects on charge transports of Ge quantum-dot resonant tunneling diodes Li,P. W.; Kuo,David M. T.; Hsu,Y. C.
    2006 Growth of low density InGaAs quantum dots for single photon sources by metal-organic chemical vapour deposition Hsieh,TP; Chang,HS; Chen,WY; Chang,WH; Hsu,TM; Yeh,NT; Ho,WJ; Chiu,PC; Chyi,JI
    2006 Improving the compression and encryption of images using FPGA-based cryptosystems Ou,SC; Chung,HY; Sung,WT
    2006 Leaky-wave photodiodes with a partially p-doped absorption layer and a distributed Bragg reflector (DBR) for high-power and high-bandwidth-responsivity product performance Chiu,WY; Shi,JW; Wang,WK; Wu,YS; Chan,YJ; Huang,YL; Xuan,R
    2006 Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer Hsueh,KP; Hsin,YM; Sheu,JK
    2006 Quasi-constant-sensitivity VCO with offset-tuning PN junction varactor array Lee SH,?Chiang YT,?Chiou HK
    2006 Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communications Shi,JW; Huang,HY; Shell,JK; Hsieh,SH; Wu,YS; Lu,JY; Huang,FH; Lai,WC
    2006 Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs Liao,YS; Shi,JW; Wu,YS; Kuo,HC; Feng,M; Lin,GR

    顯示項目251-260 / 951. (共96頁)
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