鄰近類別 研究計畫 [213/213] 類別統計 近3年內發表的文件: 0(0.00%) 含全文筆數: 85(100.00%) 文件下載次數統計 下載大於0次: 85(100.00%) 下載大於100次: 85(100.00%) 檔案下載總次數: 72766(42.61%) 最後更新時間: 2025-04-28 03:07 上傳排行 資料載入中..... 下載排行 資料載入中..... 最近上傳 Effect of temperature on CO detecti... The doping process of p-type GaN fi... Optical properties in InGaN/GaN mul... Microstructural evolution in a mult... Low-operation voltage of InGaN/GaN ... Low-operation voltage of InGaN/GaN ... FE calculation of contour integrals... Enhanced output power in an InGaN-G... Characterization of the properties ... Characterization of p-type InxGa1-x...

跳至: (選擇年份) 2025 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 2000 1999 1998 1997 1996 1995 1994 1993 1992 1991 1990 1985 1980 1975 1970 1960 1950 (選擇月份) January February March April May June July August September October November December 或輸入年份:

由新到舊排序 由最舊的開始

顯示項目61-70 / 85. (共9頁) << < 1 2 3 4 5 6 7 8 9 > >> 每頁顯示[10|25|50]項目

日期	題名	作者
2002	Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes	Wu,LW; Chang,SJ; Wen,TC; Su,YK; Chen,JF; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK
2002	InGaN/GaN light emitting diodes activated in O-2 ambient	Kuo,CH; Chang,SJ; Su,YK; Chen,JF; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
2002	InGaN/GaN tunnel-injection blue light-emitting diodes	Wen,TC; Chang,SJ; Wu,LW; Su,YK; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK; Chen,JF
2002	Low temperature activation of Mg-doped GaN in O-2 ambient	Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
2002	Making shallow traps in barium titanate inactive by reduction	Huang,CY; Chang,JY
2002	n(+)-GaN formed by Si implantation into p-GaN	Sheu,JK; Tun,CJ; Tsai,MS; Lee,CC; Chi,GC; Chang,SJ; Su,YK
2002	Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1-xN capping layers	Gessmann,T; Li,YL; Waldron,EL; Graff,JW; Schubert,EF; Sheu,JK
2002	Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching	Wen,TC; Lee,WI; Sheu,JK; Chi,GC
2002	Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers	Gessmann,T; Li,YL; Waldron,EL; Graff,JW; Schubert,EF; Sheu,JK
2002	The doping process and dopant characteristics of GaN	Sheu,JK; Chi,GC

顯示項目61-70 / 85. (共9頁) << < 1 2 3 4 5 6 7 8 9 > >> 每頁顯示[10|25|50]項目