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    顯示項目251-275 / 951. (共39頁)
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    日期題名作者
    2006 Frequency tunability of terahertz photonic transmitters Kao,TF; Chang,HH; Chen,LJ; Lu,JY; Liu,AS; Yu,YC; Wu,RB; Liu,WS; Chyi,JI; Sun,CK
    2006 Growth of gallium nitride nanorods by metalorganic molecular beam epitaxy Kuo,SY; Kei,CC; Hsiao,CN; Chao,CK
    2006 Photoexcitation effects on charge transports of Ge quantum-dot resonant tunneling diodes Li,P. W.; Kuo,David M. T.; Hsu,Y. C.
    2006 Growth of low density InGaAs quantum dots for single photon sources by metal-organic chemical vapour deposition Hsieh,TP; Chang,HS; Chen,WY; Chang,WH; Hsu,TM; Yeh,NT; Ho,WJ; Chiu,PC; Chyi,JI
    2006 Improving the compression and encryption of images using FPGA-based cryptosystems Ou,SC; Chung,HY; Sung,WT
    2006 Leaky-wave photodiodes with a partially p-doped absorption layer and a distributed Bragg reflector (DBR) for high-power and high-bandwidth-responsivity product performance Chiu,WY; Shi,JW; Wang,WK; Wu,YS; Chan,YJ; Huang,YL; Xuan,R
    2006 Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer Hsueh,KP; Hsin,YM; Sheu,JK
    2006 Quasi-constant-sensitivity VCO with offset-tuning PN junction varactor array Lee SH,?Chiang YT,?Chiou HK
    2006 Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communications Shi,JW; Huang,HY; Shell,JK; Hsieh,SH; Wu,YS; Lu,JY; Huang,FH; Lai,WC
    2006 Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs Liao,YS; Shi,JW; Wu,YS; Kuo,HC; Feng,M; Lin,GR
    2006 Pinholelike defects in multistack 1.3 mu m InAs quantum dot laser Liu,WS; Chang,HL; Liu,YS; Chyi,JI
    2006 RF power characteristics of SiGeHBTs at cryogenic temperatures Hsieh,Meng-Wei; Hsin,Yue-Ming; Liang,Kung-Hao; Chan,Yi-Jen; Tang,Denny
    2006 Reversible off-state breakdown walkout in passivated AlGaAs/InGaAs PHEMTs Tang,WB; Hsin,YM
    2006 Robustness analysis of discrete time-delay systems Huang,CP; Juang,YT
    2006 Robust integration for speech features Huang,Kuo-Chang; Juang,Yau-Tarng; Chang,Wen-Chieh
    2006 Room-temperature transient carrier transport in germanium single-hole/electron transistors Liao,WM; Li,PW; Kuo,DMT; Lai,WT
    2006 Si/SiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance Shi,JW; Chiu,PH; Huang,FH; Wu,YS; Lu,JY; Sun,CK; Liu,CW; Chen,PS
    2006 Si-diffused GaN for enhancernent-mode GaN MOSFET on Si applications Jang,S; Ren,F; Pearton,SJ; Gila,BP; Hlad,M; Abernathy,CR; Yang,H; Pan,CJ; Chyi,JI; Bove,P; Lahreche,H; Thuret,J
    2006 Simulation of Si n-MOS inversion layer with Schrodinger-Poisson equivalent circuit model Li,SJ; Chang,CC; Tsai,YT
    2006 Sliding mode control for unmatched uncertain systems with totally invariant property and exponential stability Tsai,YW; Mai,KH; Shyu,KK
    2006 Study of carrier transport by pentacene thin-film transistors at high temperatures Lo,PY; Pei,ZW; Hwang,JJ; Tseng,HY; Chan,YJ
    2006 Study of tunneling currents through germanium quantum-dot single-hole and -electron transistors Li,PW; Kuo,DMT; Liao,WM; Lai,WT
    2006 The improvement of GaN p-i-n UV sensor by 8-pair AlGaN/GaN superlattices structure Liu,SS; Li,PW; Lan,WH; Cheng,YC
    2006 Thermal stability improvement by using Pd/NiO/Al/Ti/Au reflective ohmic contacts to p-GaN for flip-chip ultraviolet light-emitting diodes Pan,CC; Chen,GT; Hsu,WJ; Lin,CW; Chyi,JI
    2006 Vertical-cavity surface-emitting lasers (VCSELs) with high-power and single-spot far-field distributions at 850-nm wavelength by use of petal-shaped light-emitting apertures Shi,JW; Yen,JL; Jiang,CH; Chen,KM; Hung,TJ; Yang,YJ

    顯示項目251-275 / 951. (共39頁)
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