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    Items for Author "Lai,LS" 

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    Showing 9 items.

    Collection Date Title Authors Bitstream
    [物理研究所] 期刊論文 2004 Optical properties of stacked Ge/Si quantum dots with different spacer thickness grown by chemical vapor deposition Chen,WY; Chang,WH; Chou,AT; Hsu,TM; Chen,PS; Pei,ZW; Lai,LS
    [物理研究所] 期刊論文 2004 Room temperature 1.3 and 1.5 mu m electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers Pei,Z; Chen,PS; Lee,SW; Lai,LS; Lu,SC; Tsai,MJ; Chang,WH; Chen,WY; Chou,AT; Hsu,TM
    [物理研究所] 期刊論文 2003 Effects of spacer thickness on optical properties of stacked Ge/Si quantum dots grown by chemical vapor deposition Chang,WH; Chen,WY; Chou,AT; Hsu,TM; Chen,PS; Pei,ZW; Lai,LS
    [物理研究所] 期刊論文 2003 Room-temperature electroluminescence at 1.3 and 1.5 mu m from Ge/Si self-assembled quantum dots Chang,WH; Chou,AT; Chen,WY; Chang,HS; Hsu,TM; Pei,Z; Chen,PS; Lee,SW; Lai,LS; Lu,SC; Tsai,MJ
    [環境工程研究所 ] 期刊論文 1997 Reduced impact ionization by using In-0.53(AlxGa1-x)(0.47)As (x=0.1,0.2) channel in InP HEMTs Lai,LS; Chan,YJ; Pan,JW; Sheih,JL; Chyi,JI
    [電機工程研究所] 期刊論文 2003 Effect of substrate biasing on Si/SiGe heterostructure MOSFETs for low-power circuit applications Li,PW; Liao,WM; Shih,CC; Kuo,TS; Lai,LS; Tseng,YT; Tsai,MJ
    [電機工程研究所] 期刊論文 2003 High performance Si/SiGe heterostructure MOSFETs for low power analog circuit applications Li,PW; Liao,WM; Shih,CC; Kuo,TS; Lai,LS; Tseng,YT; Tsai,MJ
    [電機工程研究所] 期刊論文 1999 InAlGaAs fully quaternary doped-channel FETs recessed by CHF3+BCl3 reactive ion etching Lai,LS; Kao,HC; Chan,YJ
    [電機工程研究所] 期刊論文 1997 CHF3+BCl3 reactive ion etching in AlGaAs/GaAs heterostructures Lai,LS; Chan,YJ; Kao,HC

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