English  |  正體中文  |  简体中文  |  Items with full text/Total items : 80990/80990 (100%)
Visitors : 42575881      Online Users : 1098
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Category

    Loading community tree, please wait....

    Year

    Loading year class tree, please wait....

    Items for Author "Lai,LS" 

    Return to Browse by Author

    Showing 9 items.

    Collection Date Title Authors Bitstream
    [物理研究所] 期刊論文 2003 Effects of spacer thickness on optical properties of stacked Ge/Si quantum dots grown by chemical vapor deposition Chang,WH; Chen,WY; Chou,AT; Hsu,TM; Chen,PS; Pei,ZW; Lai,LS
    [物理研究所] 期刊論文 2003 Room-temperature electroluminescence at 1.3 and 1.5 mu m from Ge/Si self-assembled quantum dots Chang,WH; Chou,AT; Chen,WY; Chang,HS; Hsu,TM; Pei,Z; Chen,PS; Lee,SW; Lai,LS; Lu,SC; Tsai,MJ
    [物理研究所] 期刊論文 2004 Optical properties of stacked Ge/Si quantum dots with different spacer thickness grown by chemical vapor deposition Chen,WY; Chang,WH; Chou,AT; Hsu,TM; Chen,PS; Pei,ZW; Lai,LS
    [電機工程研究所] 期刊論文 1997 CHF3+BCl3 reactive ion etching in AlGaAs/GaAs heterostructures Lai,LS; Chan,YJ; Kao,HC
    [環境工程研究所 ] 期刊論文 1997 Reduced impact ionization by using In-0.53(AlxGa1-x)(0.47)As (x=0.1,0.2) channel in InP HEMTs Lai,LS; Chan,YJ; Pan,JW; Sheih,JL; Chyi,JI
    [電機工程研究所] 期刊論文 1999 InAlGaAs fully quaternary doped-channel FETs recessed by CHF3+BCl3 reactive ion etching Lai,LS; Kao,HC; Chan,YJ
    [電機工程研究所] 期刊論文 2003 Effect of substrate biasing on Si/SiGe heterostructure MOSFETs for low-power circuit applications Li,PW; Liao,WM; Shih,CC; Kuo,TS; Lai,LS; Tseng,YT; Tsai,MJ
    [電機工程研究所] 期刊論文 2003 High performance Si/SiGe heterostructure MOSFETs for low power analog circuit applications Li,PW; Liao,WM; Shih,CC; Kuo,TS; Lai,LS; Tseng,YT; Tsai,MJ
    [物理研究所] 期刊論文 2004 Room temperature 1.3 and 1.5 mu m electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers Pei,Z; Chen,PS; Lee,SW; Lai,LS; Lu,SC; Tsai,MJ; Chang,WH; Chen,WY; Chou,AT; Hsu,TM

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明