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    "Polyakov,AY"的相關文件 

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    顯示 6 項.

    類別 日期 題名 作者 檔案
    [電機工程研究所] 期刊論文 2000 Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chuo,CC; Lee,CM
    [電機工程研究所] 期刊論文 2000 Spatial distribution of electrical properties in GaN p-i-n rectifiers Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC
    [光電科學與工程學系] 期刊論文 2001 Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chou,CC; Lee,CM
    [電機工程研究所] 期刊論文 2004 Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Frazier,RM; Gila,BP; Abernathy,CR; Pearton,SJ; Buyanova,IA; Rudko,GY; Chen,WM; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM
    [電機工程研究所] 期刊論文 2003 Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Overberg,ME; Thaler,GT; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM
    [電機工程研究所] 期刊論文 2003 Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Overberg,ME; Frazier,R; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM

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