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顯示項目60201-60250 / 81569. (共1632頁) << < 1200 1201 1202 1203 1204 1205 1206 1207 1208 1209 > >> 每頁顯示[10|25|50]項目

日期	題名	作者
2021-07-19	氮化鋁鎵深紫外光發光二極體高光效之封裝研究;Research on High-efficiency Packaging of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes	林浚朋; Lin, Chun-Peng
2001-07-15	氮化鋁鎵銦藍紫光雷射二極體研製與特性分析	陳冠廷; Guan-Tin Chen
2000-07-13	氮化鎵/氮化銦鎵多層量子井藍光二極體之研製及其光電特性之研究	戴菁甫; Jing-Fu Dai
2011-07-25	氮化鎵LED表面粗糙對光萃取效率之最佳化研究; Optimization of surface roughness of GaN LED for enhancement of light extraction efficiency	林哲君; Zhe-jun Lin
2010-07-28	氮化鎵串接式綠光發光二極體在超高溫(200 ℃)操作的高速表現之和其內部之載子動力學 ; Very-High Temperature(200 ℃)and High-Speed Operation of Cascade GaN Based Green Light Emitting Diode and Investigation of the Internal Carrier Dynamic	黃鴻文; Hong-wen Huang
2003-07-10	氮化鎵光偵測器的暗電流與激子效應; The dark current and the exciton effect of GaN p-i-n photodetectors	葉立學; Li-Shei Yeh
2005-06-16	氮化鎵光子晶體共振腔	丁于真; Yu-Chen Ting
2009-06-04	氮化鎵垂直結構發光二極體之高反射性歐姆接觸層; High Reflective Ohmic Contact Layer for GaN-based Vertical Light Emitting Diode	陳柏翰; Po-han Chen
2008-07-04	氮化鎵基材漏電流行為與材料品質之奈米尺度研究; A Nanoscale Study of Leakage Current and Film Quality on III-nitrides	林若璇; Ruo-Syuan Lin
2008-07-02	氮化鎵基材電晶體製作與分析; GaN-based Transistors Fabrication And Study	顏瑞成; Ruie-Cheng Yan
2008-07-01	氮化鎵基板之製備與高功率氮化鎵整流二極體之研製; Preparation of GaN Substrate and Fabrication of High Power GaN Rectifiers	綦振瀛
2016-01-26	氮化鎵場效電晶體之動態特性與表面處理研究;Study of Dynamic Characteristics and Surface Treatments of GaN Field Effect Transistors	高維新; Kao,Wei-xin
2018-12-19	氮化鎵循環材料之高值化技術開發( I );Development of High Value Technology for Gallium Nitride Circulating Materials( I )	林景崎; 周正堂; 陳志恆
2020-01-13	氮化鎵循環材料之高值化技術開發( II );Development of High Value Technology for Gallium Nitride Circulating Materials( II )	林景崎; 周正堂; 陳志恆
2004-06-15	氮化鎵微光學元件之研究; Studies of GaN-based Microoptical Elements	侯佳宏; Chia-Hung Hou
2005-06-14	氮化鎵微發光二極體之製作與發光特性研究; Fabrication and Optical Characteristics of GaN Micro-LEDs	陳吉興; Chi-Hsing Chen
2016-10-20	氮化鎵異質接面場效電晶體之電流崩塌和熱儲存研究	劉鎮瑋; Liu, Zhen-Wei
2003-07-10	氮化鎵異質結構場效電晶體中矽化鎢金屬接觸之溫度效應; Thermal Effect of WSi Metal Contacts for GaN HFETs	洪聖均; Sheng-Chun Hung
2001-07-13	氮化鎵異質結構場效電晶體製作與特性分析	許宏造; Hong-Zhau Xu
2008-07-10	氮化鎵發光二極體之光萃取效率分析與晶片設計The; Light Extraction Analysis and Chip Design for GaN-based Light-Emitting Diodes	李宗憲; Tsung-Xian Lee
2004-06-23	氮化鎵發光二極體之研製; Investigation of InGaN/GaN Light Emitting Diode	李家銘; Chia-Ming Lee
2008-10-16	氮化鎵發光二極體元件之電場模擬與電流擴散分析; Electrical Simulation and Current Spreading Analysis in the GaN-based Light-Emitting Diode Devices	許國君; Gwo-jiun Sheu
2010-11-07	氮化鎵發光二極體受應力影響之研究; Study of stress effect on GaN-based LED	張家綸; Chang Chia-Lun
2017-07-20	氮化鎵發光二極體滯彈行為之研究;Anelasticity study in GaN Light-emitting Diode	鍾超己; Chung, Chao-Chi
2003-07-05	氮化鎵發光二極體製程技術之研究; Process of GaN-based Light-emitting Diode	陳銘勝; Ming-Sheng Chen
2005-06-24	氮化鎵磊晶矽離子佈植活化度之研究; Activation efficiency analysis of Si-Implanted n-GaN	林平盛; Ping-Sheng Lin
2005-07-05	氮化鎵系列PIN紫外光偵測器之研究; Fabrication and Characterization of GaN PIN Ultraviolet Photodetectors	張憲綱; Hsien-Kang Chang
2006-12-05	氮化鎵系列異質接面雙極性電晶體之研究; Studies of GaN-Based Heterojunction Bipolar Transistors	薛光博; Kuang-Po Hsueh
2009-07-07	氮化鎵系列異質接面雙極性電晶體之研究與製作; GaN-Based Heterojunction Bipolar Transistors Study	潘俊廷; Chun-ting Pan
2005-10-01	氮化鎵系列發光元件上P型接觸電極之特性研究Characteristics; of p-type Contact on GaN-Based Light Emitting Devices	敦俊儒; Chun-Ju Tun
2016-08-30	氮化鎵緩衝層磊晶跟場效電晶體直流和動態特性關聯之研究;DC and Transient Performance of AlGaN/GaN HEMTs with Different Buffer Layers	湯順偉; Tang,Shun-Wei
2003-07-01	氮化鎵繞射式微透鏡之設計與研製; Design and Fabrication of GaN Diffractive Microlens	紀國鐘
2020-08-20	氮化鎵蕭特基二極體與高電子遷移率電晶體之設計與製作;Design and Fabrication of GaN Schottky Barrier Diodes and High Electron Mobility Transistors	陳智偉; Chen, Chih-Wei
2009-06-03	氮化鎵薄膜成長於奈米級圖樣化氮化鎵基板之研究Investigation; of GaN grown on nano-scale patterned GaN template	張力權; Li-chuan Chang
1999-09-01	氮化鎵藍光雷射二極體技術研究---子計畫III：藍色發光二極體及雷射製程研究(I)	李清庭
2000-07-01	氮化鎵藍光雷射二極體技術研究---子計畫III：藍色發光二極體及雷射製程研究(II); Fabrication Process of Blue LED and Laser Diode(II)	李清庭
1999-09-01	氮化鎵藍光雷射二極體技術研究---子計畫II：氮化鎵系列材料P-N界面之形成及其物性與結構之研究(I);The Formation of P-N Junction and It's Properties to Structure Correction Study for GaN Materials (I)	紀國鐘
2000-10-01	氮化鎵藍光雷射二極體技術研究---子計畫II：氮化鎵系列材料P-N界面之形成及其物性與結構之研究(II); The Formation of p-n Junction and It's Properties to Structure Correction Study for GaN Material(II)	紀國鐘
1999-09-01	氮化鎵藍光雷射二極體技術研究---子計畫I：氮化鎵系列材料磊晶技術之研究(I)	綦振瀛
2000-07-01	氮化鎵藍光雷射二極體技術研究---子計畫I：氮化鎵系列材料磊晶技術之研究(II); Epitaxial Growth of GaN and Related Material(II)	綦振瀛
2001-07-01	氮化鎵藍光雷射二極體技術研究---子計畫一：氮化鎵系列材料磊晶技術之研究; Epitaxial Growth of GaN and Related Material	綦振瀛
2001-07-01	氮化鎵藍光雷射二極體技術研究---子計畫三：藍色發光二極體及雷射製程研究; Fabrication Process of Blue LED and Laser Diode	李清庭
2001-07-01	氮化鎵藍光雷射二極體技術研究---子計畫二：氮化鎵系列材料P-N界面之形成及其物性與結構之研究; The Formation of p-n Junction and It's Properties to Structure Correction Study for GaN Mater	紀國鐘
1999-09-01	氮化鎵藍光雷射二極體技術研究---總計畫	綦振瀛
2000-07-01	氮化鎵藍光雷射二極體技術研究---總計畫(II); GaN-Based Blue Laser Diodes(II)	綦振瀛
2001-07-01	氮化鎵藍光雷射二極體技術研究---總計畫; GaN-Based Blue Laser Diodes	綦振瀛
2004-07-05	氮化鎵藍紫光雷射二極體之製作與特性分析	林宏誠; Hung-Cheng Lin
2005-06-30	氮化鎵藍紫光雷射二極體研製與模擬分析	黃子建; Tzu-Chien Huang
2002-07-01	氮化鎵藍紫光雷射二極體磊晶技術之研究(I); Epitaxial Growth of GaN Violet Laser Diode(I)	綦振瀛
2003-07-01	氮化鎵藍紫光雷射二極體磊晶技術之研究(II); Epitaxial Growth of GaN Violet Laser Diode(II)	綦振瀛

顯示項目60201-60250 / 81569. (共1632頁) << < 1200 1201 1202 1203 1204 1205 1206 1207 1208 1209 > >> 每頁顯示[10|25|50]項目