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    近3年內發表的文件: 0(0.00%)
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    最後更新時間: 2024-11-09 15:20


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    日期題名作者
    2001 Noncoherent detection for trellis-coded MPSK Wei,RY; Lin,MC
    2001 Performance study for two-tier CDMA cellular systems with multi-channel access Wu,JS; Chung,JK
    2001 Piezoelectric field-induced quantum-confined Stark effect in InGaN/GaN multiple quantum wells Lai,CY; Hsu,TM; Chang,WH; Tseng,KU; Lee,CM; Chuo,CC; Chyi,JI
    2001 Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure Lin,CJ; Huang,YS; Li,NY; Li,PW; Tiong,KK
    2001 Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots Hsu,TM; Chang,WH; Huang,CC; Yeh,NT; Chyi,JI
    2001 Recurrent fuzzy neural network control for piezoelectric ceramic linear ultrasonic motor drive Lin,FJ; Wai,RJ; Shyu,KK; Liu,TM
    2001 Recurrent-fuzzy-neural-network sliding-mode controlled motor-toggle servomechanism Lin,FJ; Shyu,KK; Wai,RJ
    2001 Retrieving soil moisture from simulated brightness temperatures by a neural network Liou,YA; Liu,SF; Wang,WJ
    2001 RIE gate-recessed (Al0.3Ga0.7)(0.5)In0.5P/InGaAs double doped-channel FETs using CHF3+BCl3 mixing plasma Yang,SC; Chiu,HC; Chien,FT; Chan,YJ; Kuo,JM
    2001 Simultaneous switching noise analysis and low-bounce buffer design Jou,SJ; Cheng,WC; Lin,YT
    2001 SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors Johnson,JW; Gila,BP; Luo,B; Lee,KP; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Ren,F
    2001 Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence Liang,JS; Huang,YS; Tien,CW; Chang,YM; Chen,CW; Li,NY; Li,PW; Pollak,FH
    2001 Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes Lee,CM; Chuo,CC; Dai,JF; Zheng,XF; Chyi,JI
    2001 Totally invariant state feedback controller for position control of synchronous reluctance motor Shyu,KK; Lai,CK; Hung,JY
    2001 Two-component photoluminescence decay in InGaN/GaN multiple quantum well structures Feng,SW; Cheng,YC; Liao,CC; Chung,YY; Liu,CW; Yang,CC; Lin,YS; Ma,KJ; Chyi,JI
    2001 Vertical and lateral GaN rectifiers on free-standing GaN substrates Zhang,AP; Johnson,JW; Luo,B; Ren,F; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI
    2001 Schottky rectifiers fabricated on free-standing GaN substrates Johnson,JW; LaRoch,JR; Ren,F; Gila,BP; Overberg,ME; Abernathy,CR; Chyi,JI; Chou,CC; Nee,TE; Lee,CM; Lee,KP; Park,SS; Park,YJ; Pearton,SJ
    2000 Experimental I-V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases Hsin,YM; Asbeck,PM
    2000 Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers Zhang,AP; Dang,G; Ren,F; Han,J; Cho,H; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Chu,SNG
    2000 Gd2O3/GaN metal-oxide-semiconductor field-effect transistor Johnson,JW; Luo,B; Ren,F; Gila,BP; Krishnamoorthy,W; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC
    2000 High Schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superior microwave power performance Chiu,HC; Yang,SC; Chan,YJ; Kuo,JM
    2000 High voltage GaN Schottky rectifiers Dang,GT; Zhang,AP; Ren,F; Cao,XNA; Pearton,SJ; Cho,H; Han,J; Chyi,JI; Lee,CM; Chuo,CC; Chu,SNG; Wilson,RG
    2000 Improved microwave performance of spiral inductors on Si substrates by chemically anodizing a porous silicon layer Yu,MJ; Chan,YJ; Laih,LH; Hong,JW
    2000 Improved microwave performance on low-resistivity Si substrates by Si+ ion implantation Chen,PQ; Chan,YJ
    2000 Impulse response fault model and fault extraction for functional level analog circuit diagnosis Su,CC; Chen,YT; Chiang,SS

    顯示項目626-650 / 951. (共39頁)
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