"Yeh,NT"的相关文件
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类别 |
日期 |
题名 |
作者 |
档案 |
| [電機工程研究所] 期刊論文 |
2003 |
X-ray scattering studies on InGaAs quantum dots |
Hsu,CH; Lee,HY; Hsieh,YW; Stetsko,YP; Tang,MT; Liang,KS; Yeh,NT; Chyi,JI; Noh,DY |
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| [電機工程研究所] 期刊論文 |
2000 |
Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing |
Hsu,TM; Lan,YS; Chang,WH; Yeh,NT; Chyi,JI |
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| [光電科學研究所] 期刊論文 |
1997 |
Thermal reliability and characterization of InGaP Schottky contact with Ti/Pt/Au metals |
Lee,CT; Shiao,HP; Yeh,NT; Tsai,CD; Lyu,YT; Tu,YK |
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| [電機工程研究所] 期刊論文 |
2000 |
Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region |
Yeh,NT; Lee,JM; Nee,TE; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2005 |
Selective growth of InAs quantum dots on patterned GaAs |
Hsieh,TP; Chiu,PC; Liu,YC; Yeh,NT; Ho,WJ; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2002 |
Scanning electron filling modulation reflectance of charged InGaAs self-assembled quantum dot |
Hsu,TM; Chang,WH; Lai,CY; Yeh,NT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
1999 |
Role of excess As in low-temperature grown GaAs subjected to BCl3 reactive ion etching |
Chang,MN; Chuo,CC; Lu,CM; Hsieh,KC; Yeh,NT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots |
Hsu,TM; Chang,WH; Huang,CC; Yeh,NT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2000 |
Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots |
Chang,WH; Hsu,TM; Huang,CC; Hsu,SL; Lai,CY; Yeh,NT; Nee,TE; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2005 |
Optical control of the exciton charge states of single quantum dots via impurity levels |
Chang,WH; Chang,HS; Chen,WY; Hsu,TM; Hsieh,TP; Chyi,JI; Yeh,NT |
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| [電機工程研究所] 期刊論文 |
2000 |
Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures |
Yeh,NT; Nee,TE; Chyi,JI; Hsu,TM; Huang,CC |
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| [電機工程研究所] 期刊論文 |
2002 |
Investigation of InAs/GaAs quantum-dot infrared photodetector with In0.5Ga0.5P dark current blocking layer |
Jiang,L; Li,SS; Yeh,NT; Chyi,JI; Tidrow,MZ |
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| [電機工程研究所] 期刊論文 |
2005 |
InGaAsN/GaAs quantum-well lasers using two-step and nitride passivation growth |
Chiu,PC; Yeh,NT; Hong,CC; Hsieh,TP; Tsai,YT; Ho,WJ; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2002 |
InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy |
Yeh,NT; Liu,WS; Chen,SH; Chiu,PC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2003 |
In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K |
Jiang,L; Li,SS; Yeh,NT; Chyi,JI; Ross,CE; Jones,KS |
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| [電機工程研究所] 期刊論文 |
2001 |
Improved electroluminescence of InAs quantum dots with strain reducing layer |
Yeh,NT; Nee,TE; Chyi,JI; Chia,CT; Hsu,TM; Huang,CC |
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| [電機工程研究所] 期刊論文 |
2002 |
Hole emission processes in InAs/GaAs self-assembled quantum dots |
Chang,WH; Chen,WY; Hsu,TM; Yeh,NT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2006 |
Growth of low density InGaAs quantum dots for single photon sources by metal-organic chemical vapour deposition |
Hsieh,TP; Chang,HS; Chen,WY; Chang,WH; Hsu,TM; Yeh,NT; Ho,WJ; Chiu,PC; Chyi,JI |
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| [物理研究所] 期刊論文 |
1999 |
Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots |
Chang,WH; Hsu,TM; Tsai,KF; Nee,TE; Chyi,JI; Yeh,NT |
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| [電機工程研究所] 期刊論文 |
1999 |
Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n(+) structure |
Hwang,JS; Hwang,WC; Yang,ZP; Chang,GS; Chyi,JI; Yeh,NT |
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| [電機工程研究所] 期刊論文 |
2005 |
Electroreflectance studies of InAs quantum dots with InxGa1-xAs capping layer grown by metalorganic chemical vapor deposition |
Chang,WH; Chen,HY; Chang,HS; Chen,WY; Hsu,TM; Hsieh,TP; Chyi,JI; Yeh,NT |
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| [物理研究所] 期刊論文 |
1999 |
Electron-filling modulation reflectance in charged self-assembled InxGa1-xAs quantum dots |
Hsu,TM; Chang,WH; Tsai,KF; Chyi,JI; Yeh,NT; Nee,TE |
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| [電機工程研究所] 期刊論文 |
2000 |
Electron distribution and level occupation in an ensemble of InxGa1-xAs/GaAs self-assembled quantum dots |
Chang,WH; Hsu,TM; Yeh,NT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
Effects of electric field and coulomb interaction on the interband transitions of InAs self-assembled quantum dots: A study by modulation reflectance spectroscopy |
Chang,WH; Hsu,TM; Huang,CC; Yeh,NT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
Charging of embedded InAs self-assembled quantum dots by space-charge techniques |
Chang,WH; Chen,WY; Cheng,MC; Lai,CY; Hsu,TM; Yeh,NT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2002 |
Carrier transfer effects and thermal activation behaviors in the photoluminescence of In(Ga)As self-assembled quantum dots |
Chang,WH; Hsu,TM; Yeh,NT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2005 |
A two-stack, multi-color In0.5Ga0.5As/GaAs and InAs/GaAs quantum dot infrared photodetector for long wavelength infrared detection |
Jiang,L; Li,SS; Liu,WS; Yeh,NT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
A carrier escape study from InAs self-assembled quantum dots by photocurrent measurement |
Chang,WH; Hsu,TM; Huang,CC; Hsu,SL; Lai,CY; Yeh,NT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2005 |
1.55 mu m emission from InAs quantum dots grown on GaAs |
Hsieh,TP; Chiu,PC; Chyi,JI; Yeh,NT; Ho,WJ; Chang,WH; Hsu,TM |
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| [電機工程研究所] 期刊論文 |
2004 |
1.3 mu m InAs/GaAs quantum dots directly capped with GaAs grown by metal-organic chemical vapor deposition |
Huang,KF; Hsieh,TP; Yeh,NT; Ho,WJ; Chyi,JI; Wu,MC |
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