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日期	題名	作者
2005	InGaAsN/GaAs quantum-well lasers using two-step and nitride passivation growth	Chiu,PC; Yeh,NT; Hong,CC; Hsieh,TP; Tsai,YT; Ho,WJ; Chyi,JI
2007	InGaAsSb/InP double heterojunction bipolar transistors grown by solid-source molecular beam epitaxy	Chen,Shu-Han; Wang,Sheng-Yu; Hsieh,Rei-Jay; Chyi,Jen-Inn
2010	InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer	Tu,SH; Lan,CJ; Wang,SH; Lee,ML; Chang,KH; Lin,RM; Chang,JY; Sheu,JK
2022-07-25	InGaN 量子結構對表面增強拉曼光譜生物 感測器的影響;The effect of InGaN quantum structures on surface-enhanced Raman spectroscopy biosensors.	趙芳胤; Zhao, Fang-Yin
2001	InGaN-AlInGaN multiquantum-well LEDs	Lai,WC; Chang,SJ; Yokoyam,M; Sheu,JK; Chen,JF
2004	InGaN-GaN MQW LEDs with current blocking layer formed by selective activation.	Lee,CM; Chuo,CC; Liu,YC; Chen,IL; Chyi,JI
2003	InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer	Wu,LW; Chang,SJ; Su,YK; Tsai,TY; Wen,TC; Kuo,CH; Lai,WC; Sheu,JK; Tsai,JM; Chen,SC; Huang,BR
2002	InGaN/GaN light emitting diodes activated in O-2 ambient	Kuo,CH; Chang,SJ; Su,YK; Chen,JF; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
2003	InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping	Wen,TC; Chang,SJ; Su,YK; Wu,LW; Kuo,CH; Lai,WC; Sheu,JK; Tsai,TY
2002	InGaN/GaN tunnel-injection blue light-emitting diodes	Wen,TC; Chang,SJ; Wu,LW; Su,YK; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK; Chen,JF

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