鄰近類別 研究計畫 [36/36] 期刊論文 [951/951] 考古題 [397/397] 類別統計 近3年內發表的文件: 391(12.94%) 含全文筆數: 3021(100.00%) 文件下載次數統計 下載大於0次: 3005(99.47%) 下載大於100次: 2758(91.29%) 檔案下載總次數: 1692785(71.99%) 最後更新時間: 2025-10-24 11:17 上傳排行 資料載入中..... 下載排行 資料載入中..... 最近上傳 無感測器永磁同步馬達之 I-F 啟動與 ASMO-FOC 無縫切換控制... 石墨烯奈米帶之電子熱整流探討:石墨烯異質結構拓樸態的傳輸應用;Inve... 基於40nm 65kb 1T1R 多阻態電阻式記憶 體的真亂數產生器 ... 具有高可靠度之通道擊穿型28nm 2kb 雙電晶體單次編程記憶體晶片;... 電網失真不平衡下相位偵測標么化延遲信號消除鎖相迴路之研製;Develo... 基於虛擬磁通無電流感測直接功率控制不平衡電網下三相維也納整流器系統之研... 基於SRAM的記憶體內運算之測試;Testing of SRAM-ba... 基於SRAM之Systolic計算式記憶體架構與設計自動化;Systo... 使用120-nm GaN HEMT 與 100-nm GaAs pHE... 使用 120-nm GaN HEMT 與 100-nm GaAs pH...

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顯示項目126-150 / 3021. (共121頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目

日期	題名	作者
2024-12-03	微型化雙頻平衡式微波被動電路設計;Miniaturized Dual-Band Balanced Microwave Passive Circuit Design	張威銍; Chang, Wei-Chih
2024-11-28	利用混響室進行單天線效率與輻射發射量量測實驗:與模擬軟體及不同電磁環境比較;Measurement of Single Antenna Efficiency and Radiated Emission in a Reverberation Chamber: Comparison with Simulation Software and Different Electromagnetic Environments	李彥霆; Lee, Yan-Ting
2024-11-27	可實現 2.3V大記憶視窗（每單元3位元）、可立即讀取並具有????^??次寫入之鐵電電晶體及其在機器學習之高精確度研究;Ferroelectric Transistor with a 2.3V Large Memory Window (3 bits per cell), Instant Readout, and 10˙ Write Cycles, and Its High Accuracy in Machine Learning Research	白家碩; Pai, Chia-Shuo
2024-11-26	基於氮化鍺碲碳非砷化物選擇器的高熱穩定性、低電壓變異性及高循環耐久性 (>10¹¹) 的物理分析;The Physical Analysis of High Thermal Stability, Low Voltage Variability, and High Endurance (>10¹¹) Based on a Germanium Tellurium Carbon Nitride Non-Arsenide Selector	吳湧峰; Wu, Yung-Feng
2024-11-26	實現全後段製程相容性、基於IGZO雙電晶體及鐵電電容器之非揮發性記憶體;Enabling Fully Back-End-of-Line Compatible in IGZO Based Two Transistor One Ferroelectric Capacitor (2T1F) Non-Volatile Memory	蔡堉秭; Tsai, Yu-Tzu
2024-11-25	應用0.25 μm GaN/SiC HEMT於連續B類 X頻段功率放大器與K頻段 WIPD 覆晶功率放大器暨90奈米 CMOS FR3 寬頻發射器之研製;Design and Implementation of a 0.25 μm GaN/SiC HEMT Continuous Class-B X-Band Power Amplifier, K-Band WIPD Flip-Chip Power Amplifier, and 90-nm CMOS FR3 Wideband Transmitter	陳柏豪; Chen, Po-Hao
2024-11-22	高功率氮化鎵高電子遷移率電晶體崩潰特性優化研究;Optimization Study on the Breakdown Characteristics of High-Power GaN High Electron Mobility Transistors	呂彥鋒; Lu, Yen-Feng
2024-11-20	超晶格HfO2/ZrO2結構可靠性及In2O3與TeO2通道材料遷移率的第一原理計算研究;First-Principles Study on the Reliability of Superlattice HfO2/ZrO2 Structures and the Mobility of In2O3 and TeO2 Channel Materials	許明駿; HSU, Ming-Chun
2024-11-18	應用於C/X頻帶之低功耗寬頻接收機前端電路之研製;Design and Implementation of a Low-Power, Wideband Receiver Front End for C/X Band Applications	賴薈之; LAI, HUI-CHIH
2024-11-14	高熱穩定性、長效耐久性 (>1011次 )且具瞬時讀取之多功能閘極 (TiN/Mo/TiOxNy/SL-HZO)層狀堆疊鐵電記憶體技術開發;Development of ferroelectric memory technology with high thermal stability, long endurance (>1011 cycles), and immediate readout with a multifunctional gate (TiN/Mo/TiOxNy/SL-HZO)	陳政凱; Chen, Zheng-Kai
2024-11-12	應用於X頻段互補式金氧半導體F類壓控振器與使用動態體偏壓技術B/C類混合式壓控振盪器暨整數型鎖相迴路之研製;Design and Implementation of CMOS X-Band Class-F Voltage-Controlled Oscillator, Dynamic Body Biasing Technique for Class-B/C Hybrid-Mode Voltage-Controlled Oscillator, and Integer-N Phase-Locked Loop	邱恩芸; Qiu, En-Yun
2024-11-11	適用於多步幅卷積神經網路之比特級稀疏性感知壓縮情境及加速器架構設計;Bit-Level Sparsity-Aware Compression and Accelerator Architecture Design for Multi-Stride Convolutional Neural Networks	黃筠茵; Huang, Yun-Yin
2024-10-22	具自適應且多階資料獨立相位追蹤補償技術之 5 Gbps 半速率時脈與資料回復電路;A 5 Gbps Half-Rate Clock and Data Recovery with Adaptive Multi-level Data Independent Phase Tracking Compensation Technique	蘇姿羽; Su, Tzu-Yu
2024-10-22	應用於FR3頻段互補式金氧半導體堆疊式功率放大器暨使用開關鍵控調變器之發射機與連續F類氮化鎵功率放大器研製;Design and Implementation of CMOS Stacked Power Amplifier, On-Off Keying Modulation Transmitter, and Continuous Class-F GaN Power Amplifier for FR3 Band Applications	蔡舜羽; Tsai, Shun-Yu
2024-10-14	整合雙向氮化鎵閘極二極體之650 V加強型氮化鎵電晶體;650V E-Mode GaN Transistor Integrated with Bidirectional GaN Gate Diodes	蔡碩宸; Tsai, Shuo-Chen
2024-09-25	氮化鋁鎵 /氮化鎵高電子遷移率電晶體的 p-GaN閘極工程設計和實現;Gate Engineering in E-Mode p-GaN Gate AlGaN/GaN HEMTs	Sriramadasu, Krishna Sai; Sriramadasu, Krishna Sai
2024-09-20	針對STT-MRAM記憶體內運算架構在電路老化和溫度變化的情況之下達成延長使用壽命的目標;Empowering Longevity: A Resilient STT-MRAM Computing-In-Memory Architecture Tackling Circuit Aging and Temperature Variations	林宜霆; Lin, Yi-Ting
2024-08-22	P-型氮化鎵閘極連接至源極之加強型氮化鎵 電晶體開發;E-mode AlGaN/GaN HEMTs with p-type GaN gate connected to source	曾顗澄; Tseng, Yi-Cheng
2024-08-22	在厚緩衝層矽基板上研發不同閘汲間距的1200 V加強型氮化鎵電晶體;Development of 1200 V E-mode AlGaN/GaN HEMTs on Si substrate with thick buffer layer	王怡雯; Wang, Yi-Wen
2024-08-21	基於動態隨機存取記憶體之近端與內存運算記憶體測試;Testing of DRAMs for Near and In-Memory Computing	張晉維; Zhang, Jin-Wei
2024-08-21	應用於脈動陣列深度身經網路加速器之自 我測試與修復技術;Built-In Self-Test and Repair Techniques for Systolic Array-Based AI Accelerators	周士淳; Chou, Shih-Chun
2024-08-20	1200 V 碳化矽金氧半場效電晶體及蕭特基二 極體反向恢復高溫特性分析;Reverse Recovery Characteristics of 1200 V SiC MOSFETs and SBDs at High Temperature欣	詹智傑; Chan, Chih-Chieh
2024-08-20	以粒子群最佳化負載調度策略於家庭耗能之優化;Optimizing Household Energy Consumption with Particle Swarm Optimization (PSO)-Based Load Scheduling Strategy	范德瑞; Elfando, Dery
2024-08-20	在歐姆接觸區利用石墨烯和圖案蝕刻降低氮化鎵電晶體歐姆接觸電阻;Reduced Ohmic Contact Resistance on AlGaNGaN pHEMTs via Graphene and Recessed Patterns	鍾貞祥; Chung, Chen-Hsiang
2024-08-19	應用於雷達系統之類表面電漿微型化環形槽孔天線;A Miniaturized Annular Slot Antenna Based on Spoof Surface Plasmon for Radar System Applications	郭亞硯; Kuo, Ya-Yen

顯示項目126-150 / 3021. (共121頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目