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    "Irokawa,Y"的相关文件  

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    显示 9 项.

    类别 日期 题名 作者 档案
    [電機工程研究所] 期刊論文 2004 2.6 A, 0.69 MW cm(-2) single-chip bulk GaN p-i-n rectifier Irokawa,Y; Luo,B; Kang,BS; Kim,J; LaRoche,JR; Ren,F; Baik,KH; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ
    [電機工程研究所] 期刊論文 2004 DC characteristics of AlGaN/GaN heterostructure field-effect transistors on freestanding GaN substrates Irokawa,Y; Luo,B; Ren,F; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ; Pearton,SJ
    [電機工程研究所] 期刊論文 2004 MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors Irokawa,Y; Nakano,Y; Ishiko,M; Kachi,T; Kim,J; Ren,F; Gila,BP; Onstine,AH; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI
    [電機工程研究所] 期刊論文 2004 Reduction of surface-induced current collapse in AlGaN/GaN HFETs on freestanding GaN substrates Irokawa,Y; Luo,B; Ren,F; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ
    [電機工程研究所] 期刊論文 2004 Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates Kang,BS; Ren,F; Irokawa,Y; Baik,KW; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Ko,HJ; Lee,HY
    [電機工程研究所] 期刊論文 2004 Lateral Schottky GaN rectifiers formed by Si+ ion implantation Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI
    [電機工程研究所] 期刊論文 2004 Si+ ion implanted MPS bulk GaN diodes Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS
    [電機工程研究所] 期刊論文 2003 Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI
    [電機工程研究所] 期刊論文 2003 Current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers Irokawa,Y; Luo,B; Kim,J; LaRoche,JR; Ren,F; Baik,KH; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ

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