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Items for Author "Johnson,JW"
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Showing 7 items.
Collection |
Date |
Title |
Authors |
Bitstream |
[電機工程研究所] 期刊論文 |
2002 |
1.6 A GaN Schottky rectifiers on bulk GaN substrates |
Johnson,JW; Lou,B; Ren,F; Palmer,D; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI |
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[化學工程與材料工程研究所] 期刊論文 |
2002 |
Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers |
Johnson,JW; Zhang,AP; Luo,WB; Ren,F; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI |
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[電機工程研究所] 期刊論文 |
2001 |
GaN electronics for high power, high temperature applications |
Pearton,SJ; Ren,F; Zhang,AP; Dang,G; Cao,XA; Lee,KP; Cho,H; Gila,BP; Johnson,JW; Monier,C; Abernathy,CR; Han,J; Baca,AG; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chu,SNG |
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[電機工程研究所] 期刊論文 |
2000 |
Gd2O3/GaN metal-oxide-semiconductor field-effect transistor |
Johnson,JW; Luo,B; Ren,F; Gila,BP; Krishnamoorthy,W; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
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[電機工程研究所] 期刊論文 |
2001 |
Schottky rectifiers fabricated on free-standing GaN substrates |
Johnson,JW; LaRoch,JR; Ren,F; Gila,BP; Overberg,ME; Abernathy,CR; Chyi,JI; Chou,CC; Nee,TE; Lee,CM; Lee,KP; Park,SS; Park,YJ; Pearton,SJ |
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[電機工程研究所] 期刊論文 |
2001 |
SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors |
Johnson,JW; Gila,BP; Luo,B; Lee,KP; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Ren,F |
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[電機工程研究所] 期刊論文 |
2001 |
Vertical and lateral GaN rectifiers on free-standing GaN substrates |
Zhang,AP; Johnson,JW; Luo,B; Ren,F; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI |
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