|
English
|
正體中文
|
简体中文
|
Items with full text/Total items : 80990/80990 (100%)
Visitors : 40299682
Online Users : 443
|
|
|
Items for Author "Cho,H"
Return to Browse by Author
Showing 7 items.
Collection |
Date |
Title |
Authors |
Bitstream |
[電機工程研究所] 期刊論文 |
2001 |
Comparison of GaN p-i-n and Schottky rectifier performance |
Zhang,APP; Dang,GT; Ren,F; Cho,H; Lee,KP; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
|
[電機工程研究所] 期刊論文 |
2001 |
GaN electronics for high power, high temperature applications |
Pearton,SJ; Ren,F; Zhang,AP; Dang,G; Cao,XA; Lee,KP; Cho,H; Gila,BP; Johnson,JW; Monier,C; Abernathy,CR; Han,J; Baca,AG; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chu,SNG |
|
[電機工程研究所] 期刊論文 |
2000 |
Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers |
Zhang,AP; Dang,G; Ren,F; Han,J; Cho,H; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Chu,SNG |
|
[電機工程研究所] 期刊論文 |
2000 |
High voltage GaN Schottky rectifiers |
Dang,GT; Zhang,AP; Ren,F; Cao,XNA; Pearton,SJ; Cho,H; Han,J; Chyi,JI; Lee,CM; Chuo,CC; Chu,SNG; Wilson,RG |
|
[電機工程研究所] 期刊論文 |
2000 |
Processing and device performance of GaN power rectifiers |
Zhang,AP; Dang,GT; Cao,XA; Cho,H; Ren,F; Han,J; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chi,GC; Chu,SNG; Wilson,RG; Pearton,SJ |
|
[電機工程研究所] 期刊論文 |
2000 |
Properties and effects of hydrogen in GaN |
Pearton,SJ; Cho,H; Ren,F; Chyi,JI; Han,J; Wilson,RG |
|
[電機工程研究所] 期刊論文 |
2000 |
Surface and bulk leakage currents in high breakdown GaN rectifiers |
Ren,F; Zhang,AP; Dang,GT; Cao,XA; Cho,H; Pearton,SJ; Chyi,JI; Lee,CM; Chuo,CC |
|
|
::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::