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"Yang,SC"的相關文件

類別	日期	題名	作者
[大氣物理研究所 ] 期刊論文	2009	Weight interpolation for efficient data assimilation with the Local Ensemble Transform Kalman Filter	Yang,SC; Kalnay,E; Hunt,B; Bowler,NE
[大氣物理研究所 ] 期刊論文	2009	Use of breeding to detect and explain instabilities in the global ocean	Hoffman,MJ; Kalnay,E; Carton,JA; Yang,SC
[環境工程研究所 ] 期刊論文	1997	Treatment of petrochemical wastewater by UV/H2O2 photodecomposed system	Juang,LC; Tseng,DH; Yang,SC
[機械工程研究所] 期刊論文	2001	The simulation of powders with liquid bridges in a 2D vibrated bed	Yang,SC; Hsiau,SS
[機械工程研究所] 期刊論文	2001	The simulation and experimental study of granular materials discharged from a silo with the placement of inserts	Yang,SC; Hsiau,SS
[太空科學研究所 ] 期刊論文	1999	The ROCSAT-1 IPEI preliminary results: Low-latitude ionospheric plasma and flow variations	Su,SY; Yeh,HC; Heelis,RA; Wu,JM; Yang,SC; Lee,LF; Chen,HL
[電機工程研究所] 期刊論文	2004	The microwave power performance comparisons of AlxGa1-xAs/In0.15Ga0.85As (x=0.3, 0.5, 0.7, 1.0) doped-channel HFETs	Chin,HC; Yang,SC; Chan,YJ; Chen,SH; Liu,WS; Chyi,JI
[大氣物理研究所 ] 期刊論文	2010	The Impact of Ocean Data Assimilation on Seasonal-to-Interannual Forecasts: A Case Study of the 2006 El Nino Event	Yang,SC; Rienecker,M; Keppenne,C
[電機工程研究所] 期刊論文	2003	Submicron RIE recessed InGaP/InGaAs doped-channel FETs	Yang,SC; Chiu,HC; Hwu,MJ; Wang,WK; Lin,CK; Chan,YJ
[機械工程研究所] 期刊論文	2000	Simulation study of the convection cells in a vibrated granular bed	Yang,SC; Hsiau,SS
[機械工程研究所] 期刊論文	2001	Self-diffusion analysis in a vibrated granular bed	Yang,SC; Hsiau,SS
[電機工程研究所] 期刊論文	2001	RIE gate-recessed (Al0.3Ga0.7)(0.5)In0.5P/InGaAs double doped-channel FETs using CHF3+BCl3 mixing plasma	Yang,SC; Chiu,HC; Chien,FT; Chan,YJ; Kuo,JM
[電機工程研究所] 期刊論文	2000	Reducing source and drain resistances in InGaP/lnGaAs doped-channel HFETs using delta-doping Schottky layer	Chiu,HC; Chien,FT; Yang,SC; Kuo,CW; Chan,YJ
[電機工程研究所] 期刊論文	2000	Reactive-ion-etching (AlxGa1-x)(0.5)In0.5P quaternary compounds using chlorine and fluorine mixing plasma	Yang,SC; Chan,YJ; Chang,KH; Lin,KC
[環境工程研究所 ] 期刊論文	2003	Plasma-assisted process for removing NO/NOx from gas streams with C2H4 as additive	Lee,HM; Chang,MB; Yang,SC
[資訊管理研究所] 期刊論文	2009	Pirate or Buy? The Moderating Effect of Idolatry	Wang,CC; Chen,CT; Yang,SC; Farn,CK
[機械工程研究所] 期刊論文	2003	Numerical simulation of self-diffusion and mixing in a vibrated granular bed with the cohesive effect of liquid bridges	Hsiau,SS; Yang,SC
[環境工程研究所 ] 期刊論文	2001	NO/NOx removal with C2H2 as additive via dielectric barrier discharges	Chang,MB; Yang,SC
[電機工程研究所] 期刊論文	2004	K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology	Chiu,HC; Yang,SC; Lin,CK; Hwu,MJ; Chiou,HK; Chan,YJ
[電機工程研究所] 期刊論文	2004	Improved gate leakage and microwave power performance by inserting a thin praseodymium gate metal layer in AlGaAs/InGaAs doped-channel field effect transistors	Hwu,MJ; Chju,HC; Yang,SC; Chan,YJ; Chang,LB
[電機工程研究所] 期刊論文	2002	Improved device linearity of AlGaAs/InGaAs HFETs by a second mesa etching	Chiu,HC; Yang,SC; Chien,FT; Chan,YJ
[電機工程研究所] 期刊論文	2000	High Schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superior microwave power performance	Chiu,HC; Yang,SC; Chan,YJ; Kuo,JM
[電機工程研究所] 期刊論文	2001	High power In0.49Ga0.51P/In0.15Ga0.85As heterostructure doped-channel FETs	Chiu,HC; Yang,SC; Chan,YJ; Lin,HH
[電機工程研究所] 期刊論文	2001	High power density of AlGaAs/InGaAs doped-channel FETs with low DC power supply	Chiu,HC; Yang,SC; Chien,FT; Chan,YJ
[電機工程研究所] 期刊論文	2002	High power density and large voltage swing of enhancement-mode Al0.5Ga0.5As/InGaAs pseudomorphic high electron mobility transistor for 3.5V L-band applications	Chiu,HC; Yang,SC; Chan,YJ
[電機工程研究所] 期刊論文	2003	High performance BCB-bridged AlGaAs/InGaAs power HFETs	Chiu,HC; Yeh,TJ; Yang,SC; Hwu,MJ; Chan,YJ
[企業管理研究所] 期刊論文	2009	Extending co-citation analysis to discover authors with multiple expertise	Su,YM; Yang,SC; Hsu,PY; Shiau,WL
[機械工程學系] 期刊論文	2010	Experimental Investigation of Abrasive Jet Polishing on the Free-Form Machined Surfaces of SKD61 Mold Steel Using SiC Particles	Mao,TF; Yang,SC; Tsai,FC; Hung,JC; Yan,BH
[電機工程研究所] 期刊論文	2002	Enhanced power performance of enhancement-mode Al0.5Ga0.5As/In0.15Ga0.85As pHEMTs using a low-k BCB passivation	Chiu,HC; Hwu,MJ; Yang,SC; Chan,YJ
[電機工程研究所] 期刊論文	2001	Device linearity and gate voltage swing improvement by Al0.3Ga0.7As/In0.15Ga0.85As double doped-channel design	Chien,FT; Chiu,HC; Yang,SC; Chen,CW; Chan,YJ
[資訊工程研究所] 期刊論文	2005	Detect and notify abnormal SMTP traffic and email spam over aggregate network	Yang,SC; Tseng,LM
[資訊工程研究所] 期刊論文	2004	Content delivery network with hot-video broadcasting and peer-to-peer approach	Liu,JL; Yang,SC; Yu,HF; Tseng,LM
[大氣物理研究所 ] 期刊論文	2009	Comparison of Local Ensemble Transform Kalman Filter, 3DVAR, and 4DVAR in a Quasigeostrophic Model	Yang,SC; Corazza,M; Carrassi,A; Kalnay,E; Miyoshi,T
[大氣物理研究所 ] 期刊論文	2009	Application of Coupled Bred Vectors to Seasonal-to-Interannual Forecasting and Ocean Data Assimilation	Yang,SC; Keppenne,C; Rienecker,M; Kalnay,E
[電機工程研究所] 期刊論文	2003	A novel double-recessed 0.2-mu m T-gate process for heterostructure InGaP-InGaAs doped-channel FET fabrication	Hwu,MJ; Chiu,HC; Yang,SC; Chan,YJ
[電機工程研究所] 期刊論文	2003	A novel 1.55 mu m dual-mode SSO/MSM photodetector	Lin,SM; Huang,FH; Lin,CK; Yang,SC; Lin,YH; Yu,YC; Chan,YJ
[電機工程研究所] 期刊論文	2002	Analysis, design, and optimization of InGaP-GaAsHBT matched-impedance wide-band amplifiers with multiple feedback loops	Chiang,MC; Lu,SS; Meng,CC; Yu,SA; Yang,SC; Chan,YJ
[電機工程研究所] 期刊論文	2003	A modified scalable large-signal rf model for quasi-enhancement-mode AlGaAs/InGaAs pHEMTs	Wang,CW; Lin,CK; Yang,SC; Chan,YJ; Gan,TH
[電機工程研究所] 期刊論文	2001	AlGaAs/InGaAs heterostructure doped-channel FET's exhibiting good electrical performance at high temperatures	Chiu,HC; Yang,SC; Chan,YJ
[電機工程研究所] 期刊論文	2001	2 Gbit/s transimpedance amplifier fabricated by 0.35 mu m CMOS technologies	Kuo,CW; Hsiao,CC; Yang,SC; Chan,YJ
[電機工程研究所] 期刊論文	2003	0.2-mu m gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications	Chiu,HC; Yang,SC; Lin,CK; Hwu,MJ; Chan,YJ
[電機工程研究所] 期刊論文	2001	(AlxGa1-x)(0.5)In0.5P/In0.15Ga0.85As (x = 0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications	Yang,SC; Chiu,HC; Chan,YJ; Lin,HH; Kuo,JM

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