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    显示项目226-250 / 304. (共13页)
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    日期题名作者
    2003 Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Chen,JF; Shen,JK; Tsai,JM
    2003 Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Chen,SC
    2003 n-UV plus blue/green/red white light emitting diode lamps Kuo,CH; Sheu,JK; Chang,SJ; Su,YK; Wu,LW; Tsai,JM; Liu,CH; Wu,RK
    2003 Photorefractive properties of two series of BaTiO3 crystals annealed in temperatures of 900 degrees C and 1000 degrees C Chang,JY; Huang,CY; Yueh,RR; Pan,HW; Lin,CH; Sun,CC
    2003 Properties of Cu/Au Schottky contacts on InGaP layer Liu,DS; Lee,CT; Wang,CW
    2003 Si and Zn co-doped InGaN-GaN white light-emitting diodes Chang,SJ; Wu,LW; Su,YK; Kuo,CH; Lai,WC; Hsu,YP; Sheu,JK; Chen,SF; Tsai,JM
    2003 White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors Sheu,JK; Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Lin,YC; Lai,WC; Tsai,JM; Chi,GC; Wu,RK
    2002-07-01 甲襞微循環之血球追蹤研究; The Investigation of Tracking Blood Cell in Nailfold Microcirculation System 游漢輝
    2002-07-01 光折變鈦酸鋇單晶之光譜及多波長光折變性質與氣氛處理關係之研究(II); Study on the Spectroscopy and Wavelength Dependence Photorefractive Properties of BaTiO/sub 3/ Crystal with after-Processing(II) 張正陽
    2002-07-01 高溫、高功率、高頻之氮化鋁鎵/氮化鎵PHEMT元件及高響應特性PIN; UV檢測器之研製 Fabrication of High-Temperature, High-Power, High-Speed AlGaN/GaN PHEMT and High Frequency Response AlGaN/GaN PIN UV Detectors 紀國鐘
    2002-07-01 氮化鎵藍紫光雷射二極體磊晶技術之研究(I); Epitaxial Growth of GaN Violet Laser Diode(I) 綦振瀛
    2002-07-01 新光折變材料開發及其應用技術之研究---子計畫III：高效率及新光折變材料開發之研究(II); A Study on the High Efficiency and New Photorefractive Materials(II) 張正陽
    2002-07-01 新光折變材料開發及其應用技術之研究---子計畫V：光折變晶體應用於高敏度光學空間與時域感測之研究(II); The Study of High-Sensitive Optical Sensing in Spatial and Temporal Domains with Use of Photorefractive Crystals(II) 孫慶成
    2002-07-01 新光折變材料開發及其應用技術之研究---總計畫：新光折變材料開發及其應用技術之研究(II); A Study on the New Photorefractive Material Growth and Applications Technique(II) 游漢輝; 陳志臣; 孫慶成; 鄭益祥; 張正陽; 藍崇文
    2002 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Chen,JF; Tsai,JM
    2002 Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN Chiou,JW; Mookerjee,S; Rao,KVR; Jan,JC; Tsai,HM; Asokan,K; Pong,WF; Chien,FZ; Tsai,MH; Chang,YK; Chen,YY; Lee,JF; Lee,CC; Chi,GC
    2002 Characterization of Si implants in p-type GaN Sheu,JK; Lee,ML; Tun,CJ; Kao,CJ; Yeh,LS; Chang,SJ; Chi,GC
    2002 Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure Chen,CC; Hsieh,KL; Sheu,JK; Chi,GC; Jou,MJ; Lee,CH; Lin,MZ
    2002 Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes Wu,LW; Chang,SJ; Wen,TC; Su,YK; Chen,JF; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK
    2002 InGaN/GaN light emitting diodes activated in O-2 ambient Kuo,CH; Chang,SJ; Su,YK; Chen,JF; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
    2002 InGaN/GaN tunnel-injection blue light-emitting diodes Wen,TC; Chang,SJ; Wu,LW; Su,YK; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK; Chen,JF
    2002 Low temperature activation of Mg-doped GaN in O-2 ambient Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
    2002 Making shallow traps in barium titanate inactive by reduction Huang,CY; Chang,JY
    2002 n(+)-GaN formed by Si implantation into p-GaN Sheu,JK; Tun,CJ; Tsai,MS; Lee,CC; Chi,GC; Chang,SJ; Su,YK
    2002 Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1-xN capping layers Gessmann,T; Li,YL; Waldron,EL; Graff,JW; Schubert,EF; Sheu,JK

    显示项目226-250 / 304. (共13页)
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