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近3年內發表的文件: 0(0.00%)
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Effect of temperature on CO detecti...
The doping process of p-type GaN fi...
Optical properties in InGaN/GaN mul...
Microstructural evolution in a mult...
Low-operation voltage of InGaN/GaN ...
Low-operation voltage of InGaN/GaN ...
FE calculation of contour integrals...
Enhanced output power in an InGaN-G...
Characterization of the properties ...
Characterization of p-type InxGa1-x...
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顯示項目26-50 / 85. (共4頁)
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日期
題名
作者
2006
Fabrication and tolerance reduction of a Si-based pickup module for optical storage
Lee,Chien-Chieh
;
Wang,Chih-Ming
;
Huang,S. K.
;
Chang,J. Y.
;
Chi,Gou-Chung
;
Hsu,S. C.
;
Liu,C. Y.
2006
Terahertz microchip for illicit drug detection
Lu,Ja-Yu
;
Chen,Lijin
;
Kao,Tzeng-Fu
;
Chang,Hsu-Hao
;
Chen,Hung-Wen
;
Liu,An-Shyi
;
Chen,Yi-Chun
;
Wu,Ruey-Beei
;
Liu,Wei-Sheng
;
Chyi,Jeng-Inn
;
Sun,Chi-Kuang
2006
Two-dimensional nanoultrasonic imaging by using acoustic nanowaves
Lin Kung-Hsuan
;
Yu Cheng-Ta
;
Sun Shih-Ze
;
Chen Hung-Ping
;
Pan Chang-Chi
;
Chyi Jen-Inn
;
Huang Sheng-Wen
;
Li Pai-Chi
;
Sun Chi-Kuang
2005
Anisotropic wet etching on birefringent calcite crystal
Wang,CM
;
Chang,YC
;
Sung,CD
;
Tien,HT
;
Lee,CC
;
Chang,JY
2005
Generation of frequency-tunable nanoacoustic waves by optical coherent control
Yu,CT
;
Lin,KH
;
Hsieh,CL
;
Pan,CC
;
Chyi,JI
;
Sun,CK
2005
Grating decay in reduced barium titanate crystals
Huang,CY
;
Chang,JY
2005
Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy
Pan,CJ
;
Tu,CW
;
Song,JJ
;
Cantwell,G
;
Lee,CC
;
Pong,BJ
;
Chi,GC
2005
Realization of free-space optical pickup head with stacked Si-based phase elements
Chang,JY
;
Wang,CM
;
Lee,CC
;
Shih,HF
;
Wu,ML
2004
Enhanced radiative efficiency in blue (In,Ga)N multiple-quantum-well light-emitting diodes with an electron reservoir layer
Takahashi,Y
;
Satake,A
;
Fujiwara,K
;
Shue,JK
;
Jahn,U
;
Kostial,H
;
Grahn,HT
2004
Method for producing coded micro-carrier and test method by using a novel type biochip
Chang,RS
;
Lee,DY
;
Chen,WY
;
Huang,RN
;
Huang,HY
;
Hsu,JH
;
Lin,PL
2004
Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact
Chang,SJ
;
Chang,CS
;
Su,YK
;
Chuang,RW
;
Lai,WC
;
Kuo,CH
;
Hsu,YP
;
Lin,YC
;
Shei,SC
;
Lo,HM
;
Ke,JC
;
Sheu,JK
2004
Nitride-based near-ultraviolet LEDs with an ITO transparent contact
Kuo,CH
;
Chang,SJ
;
Su,Y
;
Chuang,RW
;
Chang,CS
;
Wu,LW
;
Lai,WC
;
Chen,JF
;
Sheu,J
;
Lo,HM
;
Tsai,JM
2004
Reflection property of nano-acoustic wave at the air/GaN interface
Hsieh,CL
;
Lin,KH
;
Wu,SB
;
Pan,CC
;
Chyi,JI
;
Sun,CK
2003
Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths
Li,YL
;
Gessmann,T
;
Schubert,EF
;
Sheu,JK
2003
Deep level defect in Si-implanted GaN n(+)-p junction
Chen,XD
;
Huang,Y
;
Fung,S
;
Beling,CD
;
Ling,CC
;
Sheu,JK
;
Lee,ML
;
Chi,GC
;
Chang,SJ
2003
Experimental study of perpendicular transport in weakly coupled AlxGa1-xN/GaN superlattices
Waldron,EL
;
Li,YL
;
Schubert,EF
;
Graff,JW
;
Sheu,JK
2003
Fabrication of optical transmission elements in an SiNx membrane
Lee,CC
;
Chang,YC
;
Chang,JY
;
Chiu,CF
;
Chi,GC
2003
High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact
Chang,CS
;
Chang,SJ
;
Su,YK
;
Kuo,CH
;
Lai,WC
;
Lin,YC
;
Hsu,YP
;
Shei,SC
;
Tsai,JM
;
Lo,HM
;
Ke,JC
;
Shen,JK
2003
Image-plane disk-type multiplex hologram
Cheng,YS
;
Chen,CH
2003
In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer
Wu,LW
;
Chang,SJ
;
Su,YK
;
Chuang,RW
;
Hsu,YP
;
Kuo,CH
;
Lai,WC
;
Wen,TC
;
Tsai,JM
;
Sheu,JK
2003
InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer
Wu,LW
;
Chang,SJ
;
Su,YK
;
Tsai,TY
;
Wen,TC
;
Kuo,CH
;
Lai,WC
;
Sheu,JK
;
Tsai,JM
;
Chen,SC
;
Huang,BR
2003
InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping
Wen,TC
;
Chang,SJ
;
Su,YK
;
Wu,LW
;
Kuo,CH
;
Lai,WC
;
Sheu,JK
;
Tsai,TY
2003
Nitride-based blue LEDs with GaN/SiN double buffer layers
Kuo,CH
;
Chang,SJ
;
Su,YK
;
Wang,CK
;
Wu,LW
;
Sheu,JK
;
Wen,TC
;
Lai,WC
;
Tsai,JM
;
Lin,CC
2003
Nitride-based green light-emitting diodes with high temperature GaN barrier layers
Wu,LW
;
Chang,SJ
;
Su,YK
;
Chuang,RW
;
Wen,TC
;
Kuo,CH
;
Lai,WC
;
Chang,CS
;
Tsai,JM
;
Sheu,JK
2003
Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer
Kuo,CH
;
Chang,SJ
;
Su,YK
;
Wu,LW
;
Chen,JF
;
Shen,JK
;
Tsai,JM
顯示項目26-50 / 85. (共4頁)
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