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日期	題名	作者
2003	Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers	Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Chen,SC
2003	n-UV plus blue/green/red white light emitting diode lamps	Kuo,CH; Sheu,JK; Chang,SJ; Su,YK; Wu,LW; Tsai,JM; Liu,CH; Wu,RK
2003	Photorefractive properties of two series of BaTiO3 crystals annealed in temperatures of 900 degrees C and 1000 degrees C	Chang,JY; Huang,CY; Yueh,RR; Pan,HW; Lin,CH; Sun,CC
2003	Properties of Cu/Au Schottky contacts on InGaP layer	Liu,DS; Lee,CT; Wang,CW
2003	Si and Zn co-doped InGaN-GaN white light-emitting diodes	Chang,SJ; Wu,LW; Su,YK; Kuo,CH; Lai,WC; Hsu,YP; Sheu,JK; Chen,SF; Tsai,JM
2003	White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors	Sheu,JK; Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Lin,YC; Lai,WC; Tsai,JM; Chi,GC; Wu,RK
2002	400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes	Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Chen,JF; Tsai,JM
2002	Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN	Chiou,JW; Mookerjee,S; Rao,KVR; Jan,JC; Tsai,HM; Asokan,K; Pong,WF; Chien,FZ; Tsai,MH; Chang,YK; Chen,YY; Lee,JF; Lee,CC; Chi,GC
2002	Characterization of Si implants in p-type GaN	Sheu,JK; Lee,ML; Tun,CJ; Kao,CJ; Yeh,LS; Chang,SJ; Chi,GC
2002	Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure	Chen,CC; Hsieh,KL; Sheu,JK; Chi,GC; Jou,MJ; Lee,CH; Lin,MZ
2002	Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes	Wu,LW; Chang,SJ; Wen,TC; Su,YK; Chen,JF; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK
2002	InGaN/GaN light emitting diodes activated in O-2 ambient	Kuo,CH; Chang,SJ; Su,YK; Chen,JF; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
2002	InGaN/GaN tunnel-injection blue light-emitting diodes	Wen,TC; Chang,SJ; Wu,LW; Su,YK; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK; Chen,JF
2002	Low temperature activation of Mg-doped GaN in O-2 ambient	Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
2002	Making shallow traps in barium titanate inactive by reduction	Huang,CY; Chang,JY
2002	n(+)-GaN formed by Si implantation into p-GaN	Sheu,JK; Tun,CJ; Tsai,MS; Lee,CC; Chi,GC; Chang,SJ; Su,YK
2002	Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1-xN capping layers	Gessmann,T; Li,YL; Waldron,EL; Graff,JW; Schubert,EF; Sheu,JK
2002	Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching	Wen,TC; Lee,WI; Sheu,JK; Chi,GC
2002	Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers	Gessmann,T; Li,YL; Waldron,EL; Graff,JW; Schubert,EF; Sheu,JK
2002	The doping process and dopant characteristics of GaN	Sheu,JK; Chi,GC
2002	White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer	Sheu,JK; Pan,CJ; Chi,GC; Kuo,CH; Wu,LW; Chen,CH; Chang,SJ; Su,YK
2001	Activation analysis of rapid thermally annealed Si and Mg co-implanted semi-insulating GaAs	Lee,CC; Wu,LW; Chi,GC
2001	Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition	Wen,TC; Lee,WI; Sheu,JK; Chi,GC
2001	Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices	Sheu,JK; Kuo,CH; Chen,CC; Chi,GC; Jou,MJ
2001	Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer	Sheu,JK; Chi,GC; Jou,MJ

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