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	體積全像光學元件內的三維折射率分布之分析、量測與優化技術;Analyz...
	低維度材料之關鍵技術整合於建構前瞻半導體元件之研究( III );Th...
	前瞻氮化鎵晶片與其在高效率高功率密度電源轉換器之應用( II );Ad...
	低軌立方衛星之量子光通訊系統( I );Quantum Optical...
	結合混合實境近眼顯示與人工智能場域之前瞻研究( I );Study o...
	高壓氮化鎵元件研發及其在電動車的應用( II );Modeling a...
	體積全像光學元件內的三維折射率分布之分析、量測與優化技術;Analyz...
	高壓氮化鎵元件研發及其在電動車的應用( I );Modeling an...
	結合混合實境近眼顯示與人工智能場域之研究( II );Study of...
	前瞻氮化鎵晶片與其在高效率高功率密度電源轉換器之應用( I );Adv...

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Showing items 201-250 of 304. (7 Page(s) Totally)
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Date	Title	Authors
2004	Method for producing coded micro-carrier and test method by using a novel type biochip	Chang,RS; Lee,DY; Chen,WY; Huang,RN; Huang,HY; Hsu,JH; Lin,PL
2004	Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact	Chang,SJ; Chang,CS; Su,YK; Chuang,RW; Lai,WC; Kuo,CH; Hsu,YP; Lin,YC; Shei,SC; Lo,HM; Ke,JC; Sheu,JK
2004	Nitride-based near-ultraviolet LEDs with an ITO transparent contact	Kuo,CH; Chang,SJ; Su,Y; Chuang,RW; Chang,CS; Wu,LW; Lai,WC; Chen,JF; Sheu,J; Lo,HM; Tsai,JM
2004	Reflection property of nano-acoustic wave at the air/GaN interface	Hsieh,CL; Lin,KH; Wu,SB; Pan,CC; Chyi,JI; Sun,CK
2003-12-01	質子佈植在 μ-Disk元件上之研製(I);+B2750 Fabrication of .mu.-Disk by Proton Implantation (I)	紀國鐘
2003-11-01	光伏式生物晶片之設計與研發; Design and Development of Photovoltaic Biochip	陳啟昌
2003-07-01	微循環中血球之追蹤研究; The Tracking of Blood Cells in Microcirculation	游漢輝
2003-07-01	光折變鈦酸鋇單晶之光譜及多波長光折變性質與氣氛處理關係之研究(III); Study on the Spectroscopy and Wavelength Dependence Photorefractive Properties of BaTiO/sub 3/ Crystal with After-Processing(III)	張正陽
2003-07-01	具有深次微米閘極長度之高頻氮化鋁鎵/氮化鎵HEMT元件及高靈敏度PIN UV檢測器之研製;Fabrication of High-Speed AlGaN/GaN HEMTs with Deep Sub-Microm Gate Length and High Sensitivity AlGaN/GaN PIN UV Detectors	紀國鐘
2003-07-01	新光折變材料開發及其應用技術之研究---子計畫III：高效率及新光折變材料開發之研究(III); A Study on the High Efficiency and New Photorefractive Materials(III)	張正陽
2003-07-01	新型非線性光折變材料生長及其應用---子計畫V:光折變晶體應用於高敏度光學空間與時域感測之研究(III); The Study of High-Sensitive Optical Sensing in Spatial and Temporal Domains with Use of Photorefractive Crystals(III)	孫慶成
2003-07-01	氮化鎵藍紫光雷射二極體磊晶技術之研究(II); Epitaxial Growth of GaN Violet Laser Diode(II)	綦振瀛
2003-07-01	新光折變材料開發及其應用技術之研究---新光折變材料開發及其應用技術之研究-總計畫(III); AStudy on the New Photorefractive Material Growth and Applications Technique(III)	游漢輝; 張正陽; 孫慶成; 陳志臣; 藍崇文; 鄭益祥
2003-05-01	有線/無線通訊整合界面關鍵元件技術開發計畫(I)	綦振瀛
2003	Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths	Li,YL; Gessmann,T; Schubert,EF; Sheu,JK
2003	Deep level defect in Si-implanted GaN n(+)-p junction	Chen,XD; Huang,Y; Fung,S; Beling,CD; Ling,CC; Sheu,JK; Lee,ML; Chi,GC; Chang,SJ
2003	Experimental study of perpendicular transport in weakly coupled AlxGa1-xN/GaN superlattices	Waldron,EL; Li,YL; Schubert,EF; Graff,JW; Sheu,JK
2003	Fabrication of optical transmission elements in an SiNx membrane	Lee,CC; Chang,YC; Chang,JY; Chiu,CF; Chi,GC
2003	High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact	Chang,CS; Chang,SJ; Su,YK; Kuo,CH; Lai,WC; Lin,YC; Hsu,YP; Shei,SC; Tsai,JM; Lo,HM; Ke,JC; Shen,JK
2003	Image-plane disk-type multiplex hologram	Cheng,YS; Chen,CH
2003	In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer	Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Hsu,YP; Kuo,CH; Lai,WC; Wen,TC; Tsai,JM; Sheu,JK
2003	InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer	Wu,LW; Chang,SJ; Su,YK; Tsai,TY; Wen,TC; Kuo,CH; Lai,WC; Sheu,JK; Tsai,JM; Chen,SC; Huang,BR
2003	InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping	Wen,TC; Chang,SJ; Su,YK; Wu,LW; Kuo,CH; Lai,WC; Sheu,JK; Tsai,TY
2003	Nitride-based blue LEDs with GaN/SiN double buffer layers	Kuo,CH; Chang,SJ; Su,YK; Wang,CK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Lin,CC
2003	Nitride-based green light-emitting diodes with high temperature GaN barrier layers	Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Wen,TC; Kuo,CH; Lai,WC; Chang,CS; Tsai,JM; Sheu,JK
2003	Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer	Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Chen,JF; Shen,JK; Tsai,JM
2003	Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers	Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Chen,SC
2003	n-UV plus blue/green/red white light emitting diode lamps	Kuo,CH; Sheu,JK; Chang,SJ; Su,YK; Wu,LW; Tsai,JM; Liu,CH; Wu,RK
2003	Photorefractive properties of two series of BaTiO3 crystals annealed in temperatures of 900 degrees C and 1000 degrees C	Chang,JY; Huang,CY; Yueh,RR; Pan,HW; Lin,CH; Sun,CC
2003	Properties of Cu/Au Schottky contacts on InGaP layer	Liu,DS; Lee,CT; Wang,CW
2003	Si and Zn co-doped InGaN-GaN white light-emitting diodes	Chang,SJ; Wu,LW; Su,YK; Kuo,CH; Lai,WC; Hsu,YP; Sheu,JK; Chen,SF; Tsai,JM
2003	White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors	Sheu,JK; Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Lin,YC; Lai,WC; Tsai,JM; Chi,GC; Wu,RK
2002-07-01	甲襞微循環之血球追蹤研究; The Investigation of Tracking Blood Cell in Nailfold Microcirculation System	游漢輝
2002-07-01	光折變鈦酸鋇單晶之光譜及多波長光折變性質與氣氛處理關係之研究(II); Study on the Spectroscopy and Wavelength Dependence Photorefractive Properties of BaTiO/sub 3/ Crystal with after-Processing(II)	張正陽
2002-07-01	高溫、高功率、高頻之氮化鋁鎵/氮化鎵PHEMT元件及高響應特性PIN; UV檢測器之研製 Fabrication of High-Temperature, High-Power, High-Speed AlGaN/GaN PHEMT and High Frequency Response AlGaN/GaN PIN UV Detectors	紀國鐘
2002-07-01	氮化鎵藍紫光雷射二極體磊晶技術之研究(I); Epitaxial Growth of GaN Violet Laser Diode(I)	綦振瀛
2002-07-01	新光折變材料開發及其應用技術之研究---子計畫III：高效率及新光折變材料開發之研究(II); A Study on the High Efficiency and New Photorefractive Materials(II)	張正陽
2002-07-01	新光折變材料開發及其應用技術之研究---子計畫V：光折變晶體應用於高敏度光學空間與時域感測之研究(II); The Study of High-Sensitive Optical Sensing in Spatial and Temporal Domains with Use of Photorefractive Crystals(II)	孫慶成
2002-07-01	新光折變材料開發及其應用技術之研究---總計畫：新光折變材料開發及其應用技術之研究(II); A Study on the New Photorefractive Material Growth and Applications Technique(II)	游漢輝; 陳志臣; 孫慶成; 鄭益祥; 張正陽; 藍崇文
2002	400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes	Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Chen,JF; Tsai,JM
2002	Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN	Chiou,JW; Mookerjee,S; Rao,KVR; Jan,JC; Tsai,HM; Asokan,K; Pong,WF; Chien,FZ; Tsai,MH; Chang,YK; Chen,YY; Lee,JF; Lee,CC; Chi,GC
2002	Characterization of Si implants in p-type GaN	Sheu,JK; Lee,ML; Tun,CJ; Kao,CJ; Yeh,LS; Chang,SJ; Chi,GC
2002	Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure	Chen,CC; Hsieh,KL; Sheu,JK; Chi,GC; Jou,MJ; Lee,CH; Lin,MZ
2002	Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes	Wu,LW; Chang,SJ; Wen,TC; Su,YK; Chen,JF; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK
2002	InGaN/GaN light emitting diodes activated in O-2 ambient	Kuo,CH; Chang,SJ; Su,YK; Chen,JF; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
2002	InGaN/GaN tunnel-injection blue light-emitting diodes	Wen,TC; Chang,SJ; Wu,LW; Su,YK; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK; Chen,JF
2002	Low temperature activation of Mg-doped GaN in O-2 ambient	Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
2002	Making shallow traps in barium titanate inactive by reduction	Huang,CY; Chang,JY
2002	n(+)-GaN formed by Si implantation into p-GaN	Sheu,JK; Tun,CJ; Tsai,MS; Lee,CC; Chi,GC; Chang,SJ; Su,YK
2002	Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1-xN capping layers	Gessmann,T; Li,YL; Waldron,EL; Graff,JW; Schubert,EF; Sheu,JK

Showing items 201-250 of 304. (7 Page(s) Totally)
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