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Items for Author "Lee,ML"
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Showing 20 items.
Collection |
Date |
Title |
Authors |
Bitstream |
[電機工程研究所] 期刊論文 |
2003 |
Modeling of hierarchical fuzzy systems |
Lee,ML; Chung,HY; Yu,FM |
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[光電科學與工程學系] 期刊論文 |
2004 |
Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer |
Lee,ML; Sheu,JK; Su,YK; Chang,SJ; Lai,WC; Chi,GC |
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[光電科學研究中心] 期刊論文 |
2003 |
Deep level defect in Si-implanted GaN n(+)-p junction |
Chen,XD; Huang,Y; Fung,S; Beling,CD; Ling,CC; Sheu,JK; Lee,ML; Chi,GC; Chang,SJ |
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[光電科學研究中心] 期刊論文 |
2002 |
Characterization of Si implants in p-type GaN |
Sheu,JK; Lee,ML; Tun,CJ; Kao,CJ; Yeh,LS; Chang,SJ; Chi,GC |
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[物理研究所] 期刊論文 |
2006 |
Effects of thermal annealing on Al-doped ZnO films deposited on p-type gallium nitride |
Tun,CJ; Sheu,JK; Lee,ML; Hu,CC; Hsieh,CK; Chi,GC |
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[物理研究所] 期刊論文 |
2005 |
Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors |
Kao,CJ; Chen,MC; Tun,CJ; Chi,GC; Sheu,JK; Lai,WC; Lee,ML; Ren,F; Pearton,SJ |
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[物理研究所] 期刊論文 |
2005 |
Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metallorganic vapor phase |
Sheu,JK; Chen,SS; Lee,ML; Lai,WC; Chi,GC |
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[物理研究所] 期刊論文 |
2005 |
Rectifying characteristics of WSi0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature |
Sheu,JK; Lee,ML; Lai,WC; Tseng,HC; Chi,GC |
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[物理研究所] 期刊論文 |
2004 |
Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors |
Kao,CJ; Sheu,JK; Lai,WC; Lee,ML; Chen,MC; Chi,GC |
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[物理研究所] 期刊論文 |
2003 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer |
Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,SJ; Kao,CJ; Tun,CJ; Chen,MG; Chang,WH; Chi,GC; Tsai,JM |
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[物理研究所] 期刊論文 |
2003 |
GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts |
Chang,SJ; Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,CS; Kao,CJ; Chi,GC; Tsai,JA |
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[物理研究所] 期刊論文 |
2003 |
Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer |
Sheu,JK; Kao,CJ; Lee,ML; Lai,WC; Yeh,LS; Chi,GC; Chang,SJ; Su,YK; Tsa,JM |
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[物理研究所] 期刊論文 |
2003 |
Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure |
Yeh,LS; Lee,ML; Sheu,JK; Chen,MG; Kao,CJ; Chi,GC; Chang,SJ; Su,YK |
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[物理研究所] 期刊論文 |
2002 |
GaN p-n junction diode formed by Si ion implantation into p-GaN |
Lee,ML; Sheu,JK; Yeh,LS; Tsai,MS; Kao,CJ; Tun,CJ; Chang,SJ; Chi,GC |
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[物理研究所] 期刊論文 |
2002 |
Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN |
Sheu,JK; Lee,ML; Yeh,LS; Kao,CJ; Tun,CJ; Chen,MG; Chi,GC; Chang,SJ; Su,YK; Lee,CT |
|
[光電科學與工程學系] 期刊論文 |
2010 |
InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer |
Tu,SH; Lan,CJ; Wang,SH; Lee,ML; Chang,KH; Lin,RM; Chang,JY; Sheu,JK |
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[電機工程學系] 期刊論文 |
2010 |
Very-High Temperature (200 degrees C) and High-Speed Operation of Cascade GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer |
Shi,JW; Huang,HW; Kuo,FM; Sheu,JK; Lai,WC; Lee,ML |
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[電機工程學系] 期刊論文 |
2011 |
Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical-Optical Pump-Probe Technique |
Shi,JW; Huang,HW; Kuo,FM; Lai,WC; Lee,ML; Sheu,JK |
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[電機工程學系] 期刊論文 |
2011 |
The Influence of a Piezoelectric Field on the Dynamic Performance of GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer |
Shi,JW; Kuo,FM; Huang,HW; Sheu,JK; Yang,CC; Lai,WC; Lee,ML |
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[物理學系] 期刊論文 |
2011 |
Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers |
Sheu,JK; Tu,SJ; Lee,ML; Yeh,YH; Yang,CC; Huang,FW; Lai,WC; Chen,CW; Chi,GC |
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