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    類別 日期 題名 作者 檔案
    [物理研究所] 期刊論文 2006 Planar ultraviolet photodetectors formed by Si implantation into p-GaN Chen,M. C.; Sheu,J. K.; Lee,M. L.; Kao,C. J.; Tun,C. J.; Chi,G. C.
    [物理研究所] 期刊論文 2006 Improved performance of planar GaN-based p-i-n photodetectors with Mg-implanted isolation ring Chen,M. C.; Sheu,J. K.; Lee,M. L.; Tun,C. J.; Chi,G. C.
    [物理研究所] 期刊論文 2006 Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers Shu,G. W.; Wu,P. F.; Liu,Y. W.; Wang,J. S.; Shen,J. L.; Lin,T. Y.; Pong,P. J.; Chi,G. C.; Chang,H. J.; Chen,Y. F.; Lee,Y. C.
    [物理研究所] 期刊論文 2007 Optical studies of InN epilayers on Si substrates with different buffer layers Yang,M. D.; Shen,J. L.; Chen,M. C.; Chiang,C. C.; Lan,S. M.; Yang,T. N.; Lo,M. H.; Kuo,H. C.; Lu,T. C.; Huang,P. J.; Hung,S. C.; Chi,G. C.; Chou,W. C.
    [物理研究所] 期刊論文 2008 Nanostructured surface morphology of ZnO grown on p-type GaN and Si by metal organic chemical vapor deposition Hung,S. C.; Huang,P. J.; Chan,C. E.; Uen,W. Y.; Ren,F.; Pearton,S. J.; Yang,T. N.; Chiang,C. C.; Lan,S. M.; Chi,G. C.
    [物理研究所] 期刊論文 2008 Low-temperature phase separation in GaN nanowires: An in situ x-ray investigation Wu,S. Y.; Ji,J. -Y.; Chou,M. H.; Li,W. -H.; Chi,G. C.
    [物理研究所] 期刊論文 2008 Integration of selective area anodized AgCl thin film with AlGaN/GaN HEMTs for chloride ion detection Hung,S. C.; Wang,Y. L.; Hicks,B.; Pearton,S. J.; Ren,F.; Johnson,J. W.; Rajagopal,P.; Roberts,J. C.; Piner,E. L.; Linthicum,K. J.; Chi,G. C.
    [物理研究所] 期刊論文 2008 Hot Photoluminescence in gamma-In2Se3 Nanorods Yang,M. D.; Hu,C. H.; Shen,J. L.; Lan,S. M.; Huang,P. J.; Chi,G. C.; Chen,K. H.; Chen,L. C.; Lin,T. Y.
    [物理研究所] 期刊論文 2008 Hot carrier photoluminescence in InN epilayers Hot carrier photoluminescence in InN epilayers Yang,M. D.; Chen,Y. P.; Shu,G. W.; Shen,J. L.; Hung,S. C.; Chi,G. C.; Lin,T. Y.; Lee,Y. C.; Chen,C. T.; Ko,C. H.
    [物理研究所] 期刊論文 2008 Detection of chloride ions using an integrated Ag/AgCl electrode with AlGaN/GaN high electron mobility transistors Hung,S. C.; Wang,Y. L.; Hicks,B.; Pearton,S. J.; Dennis,D. M.; Ren,F.; Johnson,J. W.; Rajagopal,P.; Roberts,J. C.; Piner,E. L.; Linthicum,K. J.; Chi,G. C.
    [光電科學研究中心] 期刊論文 2007 Structural and optical properties of ZnO epilayers grown by plasma-assisted molecular beam epitaxy on GaN/sapphire (0001) Pan,C. J.; Tu,C. W.; Tun,C. J.; Lee,C. C.; Chi,G. C.
    [光電科學研究中心] 期刊論文 2007 Fabrication of low-stress SiNxHy membranes deposited by PECVD Chen,J. Y.; Liao,Y. M.; Lee,C. C.; Chi,G. C.
    [光電科學研究中心] 期刊論文 2007 Effect of thermal annealing on Ga-doped ZnO films prepared by magnetron sputtering Sheu,J. K.; Shu,K. W.; Lee,M. L.; Tun,C. J.; Chi,G. C.
    [光電科學研究中心] 期刊論文 2007 Dislocation reduction in GaN with multiple MgxNy/GaN buffer layers by metal organic chemical vapor deposition Tun,C. J.; Kuo,C. H.; Fu,Y. K.; Kuo,C. W.; Pan,C. J.; Chi,G. C.
    [光電科學研究中心] 期刊論文 2007 Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method Chang,K. J.; Chang,J. Y.; Chen,M. C.; Lahn,S. M.; Kao,C. J.; Li,Z. Y.; Uen,W. Y.; Chi,G. C.
    [光電科學研究中心] 期刊論文 2008 Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition Fu,Y. K.; Kuo,C. H.; Tun,C. J.; Kuo,C. W.; Lai,W. C.; Chi,G. C.; Pan,C. J.; Chen,M. C.; Hong,H. F.; Lan,S. M.
    [光電科學研究中心] 期刊論文 2008 Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001) Tsao,F. C.; Chen,J. Y.; Kuo,C. H.; Chi,G. C.; Pan,C. J.; Huang,P. J.; Tun,C. J.; Pong,B. J.; Hsueh,T. H.; Chang,C. Y.; Pearton,S. J.; Ren,F.
    [光電科學研究中心] 期刊論文 2008 Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy Chen,J. Y.; Chi,G. C.; Huang,P. J.; Chen,M. Y.; Hung,S. C.; Nien,C. H.; Chen,M. C.; Lan,S. M.; Pong,B. J.; Pan,C. J.; Tun,C. J.; Ren,F.; Chang,C. Y.; Pearton,S. J.
    [光電科學與工程學系] 期刊論文 2006 Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures Kuo,C. H.; Kuo,C. W.; Chen,C. M.; Pong,B. J.; Chi,G. C.
    [光電科學與工程學系] 期刊論文 2006 Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers Kuo,C. H.; Chen,C. M.; Kuo,C. W.; Tun,C. J.; Pan,C. J.; Pong,B. J.; Chi,G. C.
    [光電科學與工程學系] 期刊論文 2007 Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN Kuo,C. H.; Feng,H. C.; Kuo,C. W.; Chen,C. M.; Wu,L. W.; Chi,G. C.
    [光電科學與工程學系] 期刊論文 2008 Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer Kuo,C. H.; Yeh,C. L.; Chen,P. H.; Lai,W. C.; Tun,C. J.; Sheu,J. K.; Chi,G. C.
    [光電科學與工程學系] 期刊論文 2008 Drift current dominated terahertz radiation from InN at low-density excitation Lin,K. I.; Tsai,J. T.; Wang,T. S.; Hwang,J. S.; Chen,M. C.; Chi,G. C.

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