"Nee,TE"的相關文件
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類別 |
日期 |
題名 |
作者 |
檔案 |
| [電機工程研究所] 期刊論文 |
2001 |
Comparison of GaN p-i-n and Schottky rectifier performance |
Zhang,APP; Dang,GT; Ren,F; Cho,H; Lee,KP; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
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| [電機工程研究所] 期刊論文 |
2001 |
GaN electronics for high power, high temperature applications |
Pearton,SJ; Ren,F; Zhang,AP; Dang,G; Cao,XA; Lee,KP; Cho,H; Gila,BP; Johnson,JW; Monier,C; Abernathy,CR; Han,J; Baca,AG; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chu,SNG |
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| [電機工程研究所] 期刊論文 |
2001 |
Improved electroluminescence of InAs quantum dots with strain reducing layer |
Yeh,NT; Nee,TE; Chyi,JI; Chia,CT; Hsu,TM; Huang,CC |
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| [電機工程研究所] 期刊論文 |
2001 |
SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors |
Johnson,JW; Gila,BP; Luo,B; Lee,KP; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Ren,F |
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| [電機工程研究所] 期刊論文 |
2001 |
Schottky rectifiers fabricated on free-standing GaN substrates |
Johnson,JW; LaRoch,JR; Ren,F; Gila,BP; Overberg,ME; Abernathy,CR; Chyi,JI; Chou,CC; Nee,TE; Lee,CM; Lee,KP; Park,SS; Park,YJ; Pearton,SJ |
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| [電機工程研究所] 期刊論文 |
2000 |
Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells |
Chuo,CC; Lee,CM; Nee,TE; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2000 |
Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers |
Zhang,AP; Dang,G; Ren,F; Han,J; Cho,H; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Chu,SNG |
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| [電機工程研究所] 期刊論文 |
2000 |
Gd2O3/GaN metal-oxide-semiconductor field-effect transistor |
Johnson,JW; Luo,B; Ren,F; Gila,BP; Krishnamoorthy,W; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
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| [電機工程研究所] 期刊論文 |
2000 |
Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures |
Yeh,NT; Nee,TE; Chyi,JI; Hsu,TM; Huang,CC |
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| [電機工程研究所] 期刊論文 |
2000 |
Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots |
Chang,WH; Hsu,TM; Huang,CC; Hsu,SL; Lai,CY; Yeh,NT; Nee,TE; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2000 |
Processing and device performance of GaN power rectifiers |
Zhang,AP; Dang,GT; Cao,XA; Cho,H; Ren,F; Han,J; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chi,GC; Chu,SNG; Wilson,RG; Pearton,SJ |
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| [電機工程研究所] 期刊論文 |
2000 |
Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region |
Yeh,NT; Lee,JM; Nee,TE; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2000 |
Spatial distribution of electrical properties in GaN p-i-n rectifiers |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
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| [電機工程研究所] 期刊論文 |
2000 |
Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chuo,CC; Lee,CM |
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| [電機工程研究所] 期刊論文 |
1999 |
Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides |
Chang,MN; Hsieh,KC; Nee,TE; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
1994 |
MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXAL1-XAS ON GAAS |
CHYI,JI; SHIEH,JL; LIN,RM; NEE,TE; PAN,JW |
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| [物理研究所] 期刊論文 |
1999 |
Electron-filling modulation reflectance in charged self-assembled InxGa1-xAs quantum dots |
Hsu,TM; Chang,WH; Tsai,KF; Chyi,JI; Yeh,NT; Nee,TE |
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| [物理研究所] 期刊論文 |
1999 |
Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots |
Chang,WH; Hsu,TM; Tsai,KF; Nee,TE; Chyi,JI; Yeh,NT |
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| [物理研究所] 期刊論文 |
1993 |
OBSERVATION OF NONLINEAR OPTICAL PROCESS GENERATED INFRARED-EMISSION IN SODIUM VAPOR |
FUNG,HS; NEE,TE; TSAI,PJ; CHENG,WT; WU,HH; YIH,TS |
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| [光電科學與工程學系] 期刊論文 |
2002 |
Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs |
Lin,RM; Nee,TE; Tsai,MC; Chang,YH; Fan,PL; Chang,RS |
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| [光電科學與工程學系] 期刊論文 |
2001 |
Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chou,CC; Lee,CM |
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| [光電科學研究所] 期刊論文 |
1995 |
SIDEGATING EFFECT IMPROVEMENT OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR BY MULTIQUANTUM BARRIER STRUCTURE |
LEE,CT; TSAI,CD; WANG,CY; SHIAO,HP; NEE,TE; SHEN,JN |
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