中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Items for Author
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 80990/80990 (100%)
Visitors : 41653071      Online Users : 1603
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Category

    Loading community tree, please wait....

    Year

    Loading year class tree, please wait....

    Items for Author "Nee,TE" 

    Return to Browse by Author

    Showing 22 items.

    Collection Date Title Authors Bitstream
    [光電科學研究所] 期刊論文 1995 SIDEGATING EFFECT IMPROVEMENT OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR BY MULTIQUANTUM BARRIER STRUCTURE LEE,CT; TSAI,CD; WANG,CY; SHIAO,HP; NEE,TE; SHEN,JN
    [光電科學與工程學系] 期刊論文 2002 Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs Lin,RM; Nee,TE; Tsai,MC; Chang,YH; Fan,PL; Chang,RS
    [光電科學與工程學系] 期刊論文 2001 Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chou,CC; Lee,CM
    [物理研究所] 期刊論文 1999 Electron-filling modulation reflectance in charged self-assembled InxGa1-xAs quantum dots Hsu,TM; Chang,WH; Tsai,KF; Chyi,JI; Yeh,NT; Nee,TE
    [物理研究所] 期刊論文 1999 Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots Chang,WH; Hsu,TM; Tsai,KF; Nee,TE; Chyi,JI; Yeh,NT
    [物理研究所] 期刊論文 1993 OBSERVATION OF NONLINEAR OPTICAL PROCESS GENERATED INFRARED-EMISSION IN SODIUM VAPOR FUNG,HS; NEE,TE; TSAI,PJ; CHENG,WT; WU,HH; YIH,TS
    [電機工程研究所] 期刊論文 2001 Comparison of GaN p-i-n and Schottky rectifier performance Zhang,APP; Dang,GT; Ren,F; Cho,H; Lee,KP; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC
    [電機工程研究所] 期刊論文 2001 GaN electronics for high power, high temperature applications Pearton,SJ; Ren,F; Zhang,AP; Dang,G; Cao,XA; Lee,KP; Cho,H; Gila,BP; Johnson,JW; Monier,C; Abernathy,CR; Han,J; Baca,AG; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chu,SNG
    [電機工程研究所] 期刊論文 2001 Improved electroluminescence of InAs quantum dots with strain reducing layer Yeh,NT; Nee,TE; Chyi,JI; Chia,CT; Hsu,TM; Huang,CC
    [電機工程研究所] 期刊論文 2001 SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors Johnson,JW; Gila,BP; Luo,B; Lee,KP; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Ren,F
    [電機工程研究所] 期刊論文 2001 Schottky rectifiers fabricated on free-standing GaN substrates Johnson,JW; LaRoch,JR; Ren,F; Gila,BP; Overberg,ME; Abernathy,CR; Chyi,JI; Chou,CC; Nee,TE; Lee,CM; Lee,KP; Park,SS; Park,YJ; Pearton,SJ
    [電機工程研究所] 期刊論文 2000 Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells Chuo,CC; Lee,CM; Nee,TE; Chyi,JI
    [電機工程研究所] 期刊論文 2000 Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers Zhang,AP; Dang,G; Ren,F; Han,J; Cho,H; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Chu,SNG
    [電機工程研究所] 期刊論文 2000 Gd2O3/GaN metal-oxide-semiconductor field-effect transistor Johnson,JW; Luo,B; Ren,F; Gila,BP; Krishnamoorthy,W; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC
    [電機工程研究所] 期刊論文 2000 Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures Yeh,NT; Nee,TE; Chyi,JI; Hsu,TM; Huang,CC
    [電機工程研究所] 期刊論文 2000 Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots Chang,WH; Hsu,TM; Huang,CC; Hsu,SL; Lai,CY; Yeh,NT; Nee,TE; Chyi,JI
    [電機工程研究所] 期刊論文 2000 Processing and device performance of GaN power rectifiers Zhang,AP; Dang,GT; Cao,XA; Cho,H; Ren,F; Han,J; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chi,GC; Chu,SNG; Wilson,RG; Pearton,SJ
    [電機工程研究所] 期刊論文 2000 Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region Yeh,NT; Lee,JM; Nee,TE; Chyi,JI
    [電機工程研究所] 期刊論文 2000 Spatial distribution of electrical properties in GaN p-i-n rectifiers Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC
    [電機工程研究所] 期刊論文 2000 Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chuo,CC; Lee,CM
    [電機工程研究所] 期刊論文 1999 Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides Chang,MN; Hsieh,KC; Nee,TE; Chyi,JI
    [電機工程研究所] 期刊論文 1994 MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXAL1-XAS ON GAAS CHYI,JI; SHIEH,JL; LIN,RM; NEE,TE; PAN,JW

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明