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    日期題名作者
    2011 Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors Lo,CF; Chu,BH; Pearton,SJ; Dabiran,A; Chow,PP; Dore,S; Hung,SC; Chen,CW; Ren,F
    2009 Optical and structural properties of Eu-diffused and doped ZnO nanowires Pan,CJ; Chen,CW; Chen,JY; Huang,PJ; Chi,GC; Chang,CY; Ren,F; Pearton,SJ
    2009 Optical and structural properties of Mg-ion implanted GaN nanowires Huang,PJ; Chen,CW; Chen,JY; Chi,GC; Pan,CJ; Kuo,CC; Chen,LC; Hsu,CW; Chen,KH; Hung,SC; Chang,CY; Pearton,SJ; Ren,F
    2009 Optical investigation of nitrogen ion implanted bulk ZnO Pall,CJ; Chen,JY; Chi,GC; Chou,BW; Pong,BJ; Ren,F; Chang,CY; Pearton,SJ
    2009 Significant Improved Luminescence Intensity of Eu2+-Doped Ca3SiO4Cl2 Green Phosphor for White LEDs Synthesized Through Two-Stage Method Baginskiy,I; Liu,RS
    2008 Directional coupler formed by photonic crystal InAlGaAs nanorods Chiu,W. Y.; Huang,T. W.; Wu,Y. H.; Huang,F. H.; Chan,Y. J.; Hou,C. H.; Chien,H. T.; Chen,Chii Chang; Chen,S. H.; Chyi,J. I.
    2008 Effects of stoichiometry on defect formation in ZnO epilayers grown by molecular-beam epitaxy: An optically detected magnetic resonance study Wang,X. J.; Buyanova,I. A.; Chen,W. M.; Pan,C. J.; Tu,C. W.
    2008 Four-Wavelengths-Mixed White Light Emitting Diodes with Dual-Wavelength-Pumped Green and Red Phosphors Lai,Wei-Chih; Sheu,Jinn-Kong; Fu,Yi-Keng; Kuo,Cheng-Huang; Kuo,Chi-Wen; Tun,China-Ju; Pan,Ching-Jen; Chi,Gou-Chung
    2008 Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy Chen,J. Y.; Chi,G. C.; Huang,P. J.; Chen,M. Y.; Hung,S. C.; Nien,C. H.; Chen,M. C.; Lan,S. M.; Pong,B. J.; Pan,C. J.; Tun,C. J.; Ren,F.; Chang,C. Y.; Pearton,S. J.
    2008 Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001) Tsao,F. C.; Chen,J. Y.; Kuo,C. H.; Chi,G. C.; Pan,C. J.; Huang,P. J.; Tun,C. J.; Pong,B. J.; Hsueh,T. H.; Chang,C. Y.; Pearton,S. J.; Ren,F.
    2008 Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition Fu,Y. K.; Kuo,C. H.; Tun,C. J.; Kuo,C. W.; Lai,W. C.; Chi,G. C.; Pan,C. J.; Chen,M. C.; Hong,H. F.; Lan,S. M.
    2008 Synthesis, crystal structure, and luminescence properties of a novel green-yellow emitting phosphor LiZn1-xPO4 : Mn-x for light emitting diodes Chan,Ting-Shan; Liu,Ru-Shi; Baginskiy,Ivan
    2008 Vacuum ultraviolet excitable Mn2+-doped LiZnPO4 phosphors for PDP applications Chan,TS; Liu,RS; Baginskiy,I; Bagkar,N; Cheng,BM
    2007 Authentication labels based on guided-mode resonant filters Wu,Mount-Learn; Hsu,Che-Lung; Lan,Hsiao-Chin; Huang,Hung-I; Liu,Yung-Chih; Tu,Zong-Ru; Lee,Chien-Chieh; Lin,Jian-Shian; Su,Chih-Chieh; Chang,Jenq-Yang
    2007 Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method Chang,K. J.; Chang,J. Y.; Chen,M. C.; Lahn,S. M.; Kao,C. J.; Li,Z. Y.; Uen,W. Y.; Chi,G. C.
    2007 Chemical substitution effects of Tb3+ in YAG : Ce phosphors and enhancement of their emission intensity using flux combination Lin,Y. S.; Liu,R. S.
    2007 Dislocation reduction in GaN with multiple MgxNy/GaN buffer layers by metal organic chemical vapor deposition Tun,C. J.; Kuo,C. H.; Fu,Y. K.; Kuo,C. W.; Pan,C. J.; Chi,G. C.
    2007 Effect of thermal annealing on Ga-doped ZnO films prepared by magnetron sputtering Sheu,J. K.; Shu,K. W.; Lee,M. L.; Tun,C. J.; Chi,G. C.
    2007 Fabrication of low-stress SiNxHy membranes deposited by PECVD Chen,J. Y.; Liao,Y. M.; Lee,C. C.; Chi,G. C.
    2007 Narrow-band detection of propagating coherent acoustic phonons in piezoelectric InGaN/GaN multiple-quantum wells Chen,Cheng-Ying; Wen,Yu-Chieh; Chen,Hung-Ping; Liu,Tzu-Ming; Pan,Chang-Chi; Chyi,Jen-Inn; Sun,Chi-Kuang
    2007 Optical characterization studies of grown-in defects in ZnO epilayers grown by molecular beam epitaxy Wang,X. J.; Buyanova,I. A.; Chen,W. M.; Pan,C. J.; Tu,C. W.
    2007 Structural and optical properties of ZnO epilayers grown by plasma-assisted molecular beam epitaxy on GaN/sapphire (0001) Pan,C. J.; Tu,C. W.; Tun,C. J.; Lee,C. C.; Chi,G. C.
    2007 The effect of terbium concentration on the luminescent properties of yttrium oxysulfide phosphor for FED application Kang,C. C.; Liu,R. S.
    2006 Bulk-micromachined optical filter based on guided-mode resonance in silicon-nitride membrane HSU Che-Lung,LIU Yung-Chih,WANG Chih-Ming,WU Mount-Learn,TSAI Ya-Lun,CHOU Yue-Hong,LEE Chien-Chieh,CHANG Jeng-Yang
    2006 Characterizing the nanoacoustic superlattice in a phonon cavity using a piezoelectric single quantum well Lin,Kung-Hsuan; Chang,Chieh-Feng; Pan,Chang-Chi; Chyi,Jen-Inn; Keller,Stacia; Mishra,Umesh; DenBaars,Steven P.; Sun,Chi-Kuang
    2006 Fabrication and tolerance reduction of a Si-based pickup module for optical storage Lee,Chien-Chieh; Wang,Chih-Ming; Huang,S. K.; Chang,J. Y.; Chi,Gou-Chung; Hsu,S. C.; Liu,C. Y.
    2006 Terahertz microchip for illicit drug detection Lu,Ja-Yu; Chen,Lijin; Kao,Tzeng-Fu; Chang,Hsu-Hao; Chen,Hung-Wen; Liu,An-Shyi; Chen,Yi-Chun; Wu,Ruey-Beei; Liu,Wei-Sheng; Chyi,Jeng-Inn; Sun,Chi-Kuang
    2006 Two-dimensional nanoultrasonic imaging by using acoustic nanowaves Lin Kung-Hsuan; Yu Cheng-Ta; Sun Shih-Ze; Chen Hung-Ping; Pan Chang-Chi; Chyi Jen-Inn; Huang Sheng-Wen; Li Pai-Chi; Sun Chi-Kuang
    2005 Anisotropic wet etching on birefringent calcite crystal Wang,CM; Chang,YC; Sung,CD; Tien,HT; Lee,CC; Chang,JY
    2005 Generation of frequency-tunable nanoacoustic waves by optical coherent control Yu,CT; Lin,KH; Hsieh,CL; Pan,CC; Chyi,JI; Sun,CK
    2005 Grating decay in reduced barium titanate crystals Huang,CY; Chang,JY
    2005 Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy Pan,CJ; Tu,CW; Song,JJ; Cantwell,G; Lee,CC; Pong,BJ; Chi,GC
    2005 Realization of free-space optical pickup head with stacked Si-based phase elements Chang,JY; Wang,CM; Lee,CC; Shih,HF; Wu,ML
    2004 Enhanced radiative efficiency in blue (In,Ga)N multiple-quantum-well light-emitting diodes with an electron reservoir layer Takahashi,Y; Satake,A; Fujiwara,K; Shue,JK; Jahn,U; Kostial,H; Grahn,HT
    2004 Method for producing coded micro-carrier and test method by using a novel type biochip Chang,RS; Lee,DY; Chen,WY; Huang,RN; Huang,HY; Hsu,JH; Lin,PL
    2004 Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact Chang,SJ; Chang,CS; Su,YK; Chuang,RW; Lai,WC; Kuo,CH; Hsu,YP; Lin,YC; Shei,SC; Lo,HM; Ke,JC; Sheu,JK
    2004 Nitride-based near-ultraviolet LEDs with an ITO transparent contact Kuo,CH; Chang,SJ; Su,Y; Chuang,RW; Chang,CS; Wu,LW; Lai,WC; Chen,JF; Sheu,J; Lo,HM; Tsai,JM
    2004 Reflection property of nano-acoustic wave at the air/GaN interface Hsieh,CL; Lin,KH; Wu,SB; Pan,CC; Chyi,JI; Sun,CK
    2003 Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths Li,YL; Gessmann,T; Schubert,EF; Sheu,JK
    2003 Deep level defect in Si-implanted GaN n(+)-p junction Chen,XD; Huang,Y; Fung,S; Beling,CD; Ling,CC; Sheu,JK; Lee,ML; Chi,GC; Chang,SJ
    2003 Experimental study of perpendicular transport in weakly coupled AlxGa1-xN/GaN superlattices Waldron,EL; Li,YL; Schubert,EF; Graff,JW; Sheu,JK
    2003 Fabrication of optical transmission elements in an SiNx membrane Lee,CC; Chang,YC; Chang,JY; Chiu,CF; Chi,GC
    2003 High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact Chang,CS; Chang,SJ; Su,YK; Kuo,CH; Lai,WC; Lin,YC; Hsu,YP; Shei,SC; Tsai,JM; Lo,HM; Ke,JC; Shen,JK
    2003 Image-plane disk-type multiplex hologram Cheng,YS; Chen,CH
    2003 In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Hsu,YP; Kuo,CH; Lai,WC; Wen,TC; Tsai,JM; Sheu,JK
    2003 InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer Wu,LW; Chang,SJ; Su,YK; Tsai,TY; Wen,TC; Kuo,CH; Lai,WC; Sheu,JK; Tsai,JM; Chen,SC; Huang,BR
    2003 InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping Wen,TC; Chang,SJ; Su,YK; Wu,LW; Kuo,CH; Lai,WC; Sheu,JK; Tsai,TY
    2003 Nitride-based blue LEDs with GaN/SiN double buffer layers Kuo,CH; Chang,SJ; Su,YK; Wang,CK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Lin,CC
    2003 Nitride-based green light-emitting diodes with high temperature GaN barrier layers Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Wen,TC; Kuo,CH; Lai,WC; Chang,CS; Tsai,JM; Sheu,JK
    2003 Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Chen,JF; Shen,JK; Tsai,JM

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