"Tun,CJ"的相關文件
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顯示 23 項.
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類別 |
日期 |
題名 |
作者 |
檔案 |
| [光電科學研究所] 期刊論文 |
2009 |
Dislocation reduction in GaN with double MgxNy/AlN buffer layer by metal organic chemical vapor deposition |
Kuo,CW; Fu,YK; Kuo,CH; Chang,LC; Tun,CJ; Pan,CJ; Chi,GC |
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| [光電科學研究所] 期刊論文 |
2009 |
GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars |
Lai,WC; Chen,PH; Chang,LC; Kuo,CH; Sheu,JK; Tun,CJ; Shei,SC |
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| [光電科學研究所] 期刊論文 |
2009 |
Growth and characterization of c-plane AlGaN on gamma-LiAlO2 |
Tun,CJ; Kuo,CH; Fu,YK; Kuo,CW; Chou,MMC; Chi,GC |
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| [光電科學研究所] 期刊論文 |
2009 |
Improvement of the Efficiency of Nitride-Based Light Emitting Diodes on Nanoinverted Pyramid GaN Templates |
Kuo,CH; Chang,LC; Kuo,CW; Tun,CJ |
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| [光電科學研究所] 期刊論文 |
2009 |
Nitride-Based Asymmetric Two-Step Light-Emitting Diode With In0.08Ga0.92N Shallow Step |
Kuo,CH; Fu,YK; Yeh,CL; Tun,CJ; Chen,PH; Lai,WC; Chang,SJ |
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| [光電科學研究所] 期刊論文 |
2009 |
Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls |
Kuo,CW; Lee,YC; Fu,YK; Tsai,CH; Wu,ML; Chi,GC; Kuo,CH; Tun,CJ |
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| [光電科學與工程學系] 期刊論文 |
2004 |
Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor deposition |
Tu,RC; Tun,CJ; Chuo,CC; Lee,BC; Tsai,CE; Wang,TC; Chi,J; Lee,CP; Chi,GC |
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| [光電科學與工程學系] 期刊論文 |
2003 |
Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer |
Tu,RC; Tun,CJ; Shen,JK; Kuo,WH; Wang,TC; Tsai,CE; Hsu,JT; Chi,J; Chi,GC |
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| [光電科學與工程學系] 期刊論文 |
2003 |
Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers |
Tu,RC; Chuo,CC; Pan,SM; Fan,YM; Tsai,CE; Wang,TC; Tun,CJ; Chi,GC; Lee,BC; Lee,CP |
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| [光電科學與工程學系] 期刊論文 |
2003 |
Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers |
Tu,RC; Tun,CJ; Pan,SM; Liu,HP; Tsai,CE; Sheu,JK; Chuo,CC; Wang,TC; Chi,GC; Chen,IG |
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| [光電科學與工程學系] 期刊論文 |
2003 |
Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature |
Tu,RC; Tun,CJ; Pan,SM; Chuo,CC; Sheu,JK; Tsai,CE; Wang,TC; Chi,GC |
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| [光電科學研究中心] 期刊論文 |
2002 |
Characterization of Si implants in p-type GaN |
Sheu,JK; Lee,ML; Tun,CJ; Kao,CJ; Yeh,LS; Chang,SJ; Chi,GC |
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| [光電科學研究中心] 期刊論文 |
2002 |
n(+)-GaN formed by Si implantation into p-GaN |
Sheu,JK; Tun,CJ; Tsai,MS; Lee,CC; Chi,GC; Chang,SJ; Su,YK |
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| [物理研究所] 期刊論文 |
2006 |
Effects of thermal annealing on Al-doped ZnO films deposited on p-type gallium nitride |
Tun,CJ; Sheu,JK; Lee,ML; Hu,CC; Hsieh,CK; Chi,GC |
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| [物理研究所] 期刊論文 |
2005 |
Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors |
Kao,CJ; Chen,MC; Tun,CJ; Chi,GC; Sheu,JK; Lai,WC; Lee,ML; Ren,F; Pearton,SJ |
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| [物理研究所] 期刊論文 |
2003 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer |
Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,SJ; Kao,CJ; Tun,CJ; Chen,MG; Chang,WH; Chi,GC; Tsai,JM |
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| [物理研究所] 期刊論文 |
2002 |
GaN p-n junction diode formed by Si ion implantation into p-GaN |
Lee,ML; Sheu,JK; Yeh,LS; Tsai,MS; Kao,CJ; Tun,CJ; Chang,SJ; Chi,GC |
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| [物理研究所] 期刊論文 |
2002 |
Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN |
Sheu,JK; Lee,ML; Yeh,LS; Kao,CJ; Tun,CJ; Chen,MG; Chi,GC; Chang,SJ; Su,YK; Lee,CT |
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| [化學工程與材料工程學系 ] 期刊論文 |
2010 |
Fabrication of High-Power InGaN-Based Light-Emitting Diode Chips on Pyramidally Patterned Sapphire Substrate |
Chen,YJ; Kuo,CH; Tun,CJ; Hsu,SC; Cheng,YJ; Liu,CY |
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| [光電科學與工程學系] 期刊論文 |
2010 |
GaN-Based LEDs With AZO:Y Upper Contact |
Chen,PH; Lai,WC; Peng,LC; Kuo,CH; Yeh,CL; Sheu,JK; Tun,CJ |
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| [光電科學與工程學系] 期刊論文 |
2010 |
Nitride-based blue light-emitting diodes with multiple Mg(x)N(y)/GaN buffer layers |
Fu,YK; Kuo,CH; Tun,CJ; Chang,LC |
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| [物理學系] 期刊論文 |
2010 |
Catalyst-free ZnO nanowires grown on a-plane GaN |
Chen,CW; Pan,CJ; Tsao,FC; Liu,YL; Kuo,CW; Kuo,CH; Chi,GC; Chen,PH; Lai,WC; Hsueh,TH; Tun,CJ; Chang,CY; Pearton,SJ; Ren,F |
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| [物理學系] 期刊論文 |
2011 |
Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure |
Chen,CW; Hung,SC; Lee,CH; Tun,CJ; Kuo,CH; Yang,MD; Yeh,CW; Wu,CH; Chi,GC |
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