Siblings Research Project [36/36] journal & Dissertation [951/951] retired tests [397/397] Collection Statistics Item counts issued in 3 years: 297(10.15%) Items With Fulltext: 2927(100.00%) Download counts of the item Download times greater than 0: 2927(100.00%) Download times greater than 100: 2520(86.09%) Total Bitstream Download Counts: 1558509(71.37%) Last Update: 2025-04-26 16:38 Top Upload Loading... Top Download Loading... Recent Submissions 可實現 2.3V大記憶視窗（每單元3位元）、可立即讀取並具有????^... 透過氫電漿處理提升 FeFET 之耐久性、儲 存密度與讀取速度並改善 ... 應用於光耦合隔離系統之發送端三角積分調變器;A Design of S... 電感耦合隔離系統接收端設計與實作;Design and Impleme... 應用於光耦合隔離系統發送端之動態縮放式 類比數位轉換器;A Desig... 應用深度學習模型偵測動作前腦波訊號 於虛擬環境中之即時人物控制;Rea... 氮化硼介導III族氮化物和 B(Al,Ga)N 異質結構的磊晶成長;B... 基於橋式T線圈 之微型化三頻微波被動電路設計;Design of mi... 結合眼動事件與腦電波於學員解題歷程下之腦波律動分析;Analysis ... 以時間多工進行的砷化銦鎵/砷化銦鋁單光子雪崩二極體實現光子數解析;In...

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Showing items 26-50 of 2927. (118 Page(s) Totally) << < 1 2 3 4 5 6 7 8 9 10 > >> View [10|25|50] records per page

Date	Title	Authors
2025-01-15	合成孔徑雷達背向投影演算法效能分析與硬體實作;Performance Analysis and Hardware Implementation of Back Projection Algorithm for Synthetic Aperture Radar	張家豪; Chang, Chia-Hao
2025-01-14	應用於第五代無線通訊與X頻段之互補式金氧半導體功率放大器設計暨FR3頻段之改良型帶內全雙工電平衡雙工器之研製;Design and Implementation of CMOS Power Amplifiers for 5G Wireless Communication and X-Band Applications and an Improved In-Band Full-Duplex Balanced Duplexer for the FR3 Band	莊智皓; Chih-Hao-Chuang
2025-01-06	探討記憶體裝置中老化效應對深度神經網路預測準確性之影響：分析策略與解決方法;Exploring the Impact of Aging Effects in Memory Devices on Deep Neural Networks: Analysis and Solutions	蔡瑩靜; Tsai, Ying-Jing
2024-12-25	差速驅動輪式移動機器人輕量化設計與運動軌跡精確追蹤控制;Differential Drive Wheeled Mobile Robot Lightweight Design and Precise Tracking Control of Motion Trajectory	周娟安; Chou, Chuan-An
2024-12-17	可程式化寬頻分數型頻率合成器模組與毫米波多容值共振並聯二極體切換器之研製;Design of Programmable Wideband Fractional Synthesizer Module and Millimeter-Wave Multi-Capacitance Resonance Shunt-Diode Switches	陳羿夫; Chen, Yi-Fu
2024-12-03	透過氫電漿處理提升 FeFET 之耐久性、儲 存密度與讀取速度並改善 FeCAM 設計中的 穩定性與漢明距離;Enhancing FeFET Endurance、Storage Density、Read Speed through H2 Plasma Treatment, and Improving Stability and Hamming Distance in FeCAM Designs	黃子容; Huang, Zi-Rong
2024-12-03	微型化雙頻平衡式微波被動電路設計;Miniaturized Dual-Band Balanced Microwave Passive Circuit Design	張威銍; Chang, Wei-Chih
2024-11-28	利用混響室進行單天線效率與輻射發射量量測實驗:與模擬軟體及不同電磁環境比較;Measurement of Single Antenna Efficiency and Radiated Emission in a Reverberation Chamber: Comparison with Simulation Software and Different Electromagnetic Environments	李彥霆; Lee, Yan-Ting
2024-11-27	可實現 2.3V大記憶視窗（每單元3位元）、可立即讀取並具有????^??次寫入之鐵電電晶體及其在機器學習之高精確度研究;Ferroelectric Transistor with a 2.3V Large Memory Window (3 bits per cell), Instant Readout, and 10˙ Write Cycles, and Its High Accuracy in Machine Learning Research	白家碩; Pai, Chia-Shuo
2024-11-26	基於氮化鍺碲碳非砷化物選擇器的高熱穩定性、低電壓變異性及高循環耐久性 (>10¹¹) 的物理分析;The Physical Analysis of High Thermal Stability, Low Voltage Variability, and High Endurance (>10¹¹) Based on a Germanium Tellurium Carbon Nitride Non-Arsenide Selector	吳湧峰; Wu, Yung-Feng
2024-11-26	實現全後段製程相容性、基於IGZO雙電晶體及鐵電電容器之非揮發性記憶體;Enabling Fully Back-End-of-Line Compatible in IGZO Based Two Transistor One Ferroelectric Capacitor (2T1F) Non-Volatile Memory	蔡堉秭; Tsai, Yu-Tzu
2024-11-25	應用0.25 μm GaN/SiC HEMT於連續B類 X頻段功率放大器與K頻段 WIPD 覆晶功率放大器暨90奈米 CMOS FR3 寬頻發射器之研製;Design and Implementation of a 0.25 μm GaN/SiC HEMT Continuous Class-B X-Band Power Amplifier, K-Band WIPD Flip-Chip Power Amplifier, and 90-nm CMOS FR3 Wideband Transmitter	陳柏豪; Chen, Po-Hao
2024-11-22	高功率氮化鎵高電子遷移率電晶體崩潰特性優化研究;Optimization Study on the Breakdown Characteristics of High-Power GaN High Electron Mobility Transistors	呂彥鋒; Lu, Yen-Feng
2024-11-20	超晶格HfO2/ZrO2結構可靠性及In2O3與TeO2通道材料遷移率的第一原理計算研究;First-Principles Study on the Reliability of Superlattice HfO2/ZrO2 Structures and the Mobility of In2O3 and TeO2 Channel Materials	許明駿; HSU, Ming-Chun
2024-11-18	應用於C/X頻帶之低功耗寬頻接收機前端電路之研製;Design and Implementation of a Low-Power, Wideband Receiver Front End for C/X Band Applications	賴薈之; LAI, HUI-CHIH
2024-11-14	高熱穩定性、長效耐久性 (>1011次 )且具瞬時讀取之多功能閘極 (TiN/Mo/TiOxNy/SL-HZO)層狀堆疊鐵電記憶體技術開發;Development of ferroelectric memory technology with high thermal stability, long endurance (>1011 cycles), and immediate readout with a multifunctional gate (TiN/Mo/TiOxNy/SL-HZO)	陳政凱; Chen, Zheng-Kai
2024-11-12	應用於X頻段互補式金氧半導體F類壓控振器與使用動態體偏壓技術B/C類混合式壓控振盪器暨整數型鎖相迴路之研製;Design and Implementation of CMOS X-Band Class-F Voltage-Controlled Oscillator, Dynamic Body Biasing Technique for Class-B/C Hybrid-Mode Voltage-Controlled Oscillator, and Integer-N Phase-Locked Loop	邱恩芸; Qiu, En-Yun
2024-11-11	適用於多步幅卷積神經網路之比特級稀疏性感知壓縮情境及加速器架構設計;Bit-Level Sparsity-Aware Compression and Accelerator Architecture Design for Multi-Stride Convolutional Neural Networks	黃筠茵; Huang, Yun-Yin
2024-10-22	具自適應且多階資料獨立相位追蹤補償技術之 5 Gbps 半速率時脈與資料回復電路;A 5 Gbps Half-Rate Clock and Data Recovery with Adaptive Multi-level Data Independent Phase Tracking Compensation Technique	蘇姿羽; Su, Tzu-Yu
2024-10-22	應用於FR3頻段互補式金氧半導體堆疊式功率放大器暨使用開關鍵控調變器之發射機與連續F類氮化鎵功率放大器研製;Design and Implementation of CMOS Stacked Power Amplifier, On-Off Keying Modulation Transmitter, and Continuous Class-F GaN Power Amplifier for FR3 Band Applications	蔡舜羽; Tsai, Shun-Yu
2024-10-14	整合雙向氮化鎵閘極二極體之650 V加強型氮化鎵電晶體;650V E-Mode GaN Transistor Integrated with Bidirectional GaN Gate Diodes	蔡碩宸; Tsai, Shuo-Chen
2024-09-25	氮化鋁鎵 /氮化鎵高電子遷移率電晶體的 p-GaN閘極工程設計和實現;Gate Engineering in E-Mode p-GaN Gate AlGaN/GaN HEMTs	Sriramadasu, Krishna Sai; Sriramadasu, Krishna Sai
2024-09-20	針對STT-MRAM記憶體內運算架構在電路老化和溫度變化的情況之下達成延長使用壽命的目標;Empowering Longevity: A Resilient STT-MRAM Computing-In-Memory Architecture Tackling Circuit Aging and Temperature Variations	林宜霆; Lin, Yi-Ting
2024-08-22	P-型氮化鎵閘極連接至源極之加強型氮化鎵 電晶體開發;E-mode AlGaN/GaN HEMTs with p-type GaN gate connected to source	曾顗澄; Tseng, Yi-Cheng
2024-08-22	在厚緩衝層矽基板上研發不同閘汲間距的1200 V加強型氮化鎵電晶體;Development of 1200 V E-mode AlGaN/GaN HEMTs on Si substrate with thick buffer layer	王怡雯; Wang, Yi-Wen

Showing items 26-50 of 2927. (118 Page(s) Totally) << < 1 2 3 4 5 6 7 8 9 10 > >> View [10|25|50] records per page