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"HONG,JW"的相關文件
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顯示 33 項.
類別 |
日期 |
題名 |
作者 |
檔案 |
[電機工程研究所] 期刊論文 |
2005 |
Suppressing dark-current in planar Si-based MSM photodetector with alternated i-a-Si : H/i-a-SiGe : H grade superiattice-like layers |
Lo,SY; Wei,YL; Yeh,RH; Hong,JW |
|
[物理研究所] 期刊論文 |
1995 |
STUDIES OF LARGE-AREA SILICON MICROSTRIP SENSORS |
TSAY,WC; HONG,JW; CHANG,YH; CHEN,A; HOU,SR; HSU,SL; LIN,CH; LIN,WT; TING,HJ; CHIANG,ST; CHUANG,E; HWANG,SW |
|
[電機工程研究所] 期刊論文 |
2002 |
SiO2-isolated visible amorphous thin-film LED fabricated on crystalline silicon substrate |
Yeh,RH; Lin,CS; Liu,WH; Hong,JW |
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[電機工程研究所] 期刊論文 |
2003 |
Reducing dark current in a high-speed Si-based interdigitated trench-electrode MSM photodetector |
Lin,CS; Chang,YC; Yeh,RH; Hong,JW |
|
[化學工程與材料工程研究所] 期刊論文 |
1997 |
Porous silicon light-emitting diode with tunable color |
Chen,YA; Chen,BF; Tsay,WC; Laih,LH; Chang,MN; Chyi,JI; Hong,JW; Chang,CY |
|
[電機工程研究所] 期刊論文 |
2002 |
Optoelectronic characteristics of polymer light emitting diodes with poly(2-methoxy-5-(2 ' ethyl-hexoxy)-1,4-phenylene-vinylene) and hydrogenated amorphous silicon alloy heterointerfaces |
Lin,CS; Yeh,RH; Huang,CP; Hong,JW |
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[電機工程研究所] 期刊論文 |
2002 |
Optoelectronic characteristics of MEH-PPV polymer LEDs with n-a-SiCGe : H and p-a-Si : H carrier injection layers |
Lin,CS; Yeh,RH; Pai,F; Hong,JW |
|
[電機工程研究所] 期刊論文 |
1997 |
Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layer |
Chen,YA; Chiou,CF; Tsay,WC; Laih,LH; Hong,JW; Chang,CY |
|
[電機工程研究所] 期刊論文 |
1995 |
LOW-THRESHOLD INALGAAS/ALGAAS STRAINED-QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY |
CHYI,JI; GAU,JH; SHIEH,JL; PAN,JW; CHAN,YJ; HONG,JW; HUANG,MF |
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[電機工程研究所] 期刊論文 |
1994 |
LOW DARK CURRENT AND HIGH LINEARITY INGAAS MSM PHOTODETECTORS |
CHYI,JI; WEI,TS; HONG,JW; LIN,W; TU,YK |
|
[電機工程研究所] 期刊論文 |
1994 |
INVESTIGATION OF NEW NARROW-BANDWIDTH A-SI-H PHOTODETECTOR |
SHIN,NF; HONG,JW; WU,YF; JEN,TS; CHANG,CY |
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[物理研究所] 期刊論文 |
1997 |
Improving the transient response of a Si metal-semiconductor-metal photodetector with an additional i-a-SiGe:H film |
Laih,LH; Wang,JC; Chen,YA; Tsay,WC; Jen,TS; Chen,JS; Hong,JW |
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[電機工程研究所] 期刊論文 |
2002 |
Improving contact performances of Al(Al/Pd) and i-a-SiGe : H interface using an additional very thin Sb layer |
Lin,CS; Yeh,RH; Li,IX; Hong,JW |
|
[電機工程研究所] 期刊論文 |
2001 |
Improving characteristics of Si-based trench-electrode metal-semiconductor-metal photodetectors using self-aligned process |
Lin,CS; Yeh,RH; Liao,CH; Hong,JW |
|
[電機工程研究所] 期刊論文 |
1997 |
Improvement of current injection of porous silicon |
Chen,YA; Liang,NY; Laih,LH; Tsay,WC; Chang,MN; Hong,JW |
|
[物理研究所] 期刊論文 |
1994 |
IMPROVED PROCESS OF FABRICATING AC-COUPLED SILICON MICRO-STRIP SENSORS |
TSAY,WC; HONG,JW; CHEN,A; LIN,WT; HSU,CY; JAN,SM; KUO,CL |
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[電機工程研究所] 期刊論文 |
2000 |
Improved microwave performance of spiral inductors on Si substrates by chemically anodizing a porous silicon layer |
Yu,MJ; Chan,YJ; Laih,LH; Hong,JW |
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[電機工程研究所] 期刊論文 |
1993 |
HYDROGENATED AMORPHOUS SILICON-CARBIDE THIN-FILM LIGHT-EMITTING DIODE WITH QUANTUM-WELL-INJECTION STRUCTURE |
JEN,TS; CHEN,JY; SHIN,NF; HONG,JW; CHANG,CY |
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[電機工程研究所] 期刊論文 |
1994 |
HYDROGENATED AMORPHOUS-SILICON CARBIDE P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYERS INSERTED AT P-I INTERFACE |
JEN,TS; PAN,JW; SHIN,NF; TSAY,WC; HONG,JW; CHANG,CY |
|
[電機工程研究所] 期刊論文 |
1993 |
HYDROGENATED AMORPHOUS-SILICON CARBIDE DOUBLE GRADED-GAP P-I-N THIN-FILM LIGHT-EMITTING-DIODES |
SHIN,NF; CHEN,JY; JEN,TS; HONG,JW; CHANG,CY |
|
[電機工程研究所] 期刊論文 |
2002 |
High-speed Si-based metal-semiconductor-metal photodetectors with an additional composition-graded i-a-Si1-xGex : H layer |
Lin,CS; Yeh,RH; Liao,CH; Hong,JW |
|
[電機工程研究所] 期刊論文 |
2003 |
High-sensitivity planar Si-based MSM photodetector with very thin amorphous silicon-alloy quantum-well-like barrier layers |
Lin,CS; Tu,LP; Yeh,RH; Hong,JW |
|
[電機工程研究所] 期刊論文 |
1996 |
High responsivity a-Si:H bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD) |
Laih,LH; Chen,YA; Tsay,WC; Hong,JW |
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[電機工程研究所] 期刊論文 |
1995 |
HIGH-PERFORMANCE METAL-SEMICONDUCTOR-METAL PHOTODETECTOR WITH A THIN HYDROGENATED AMORPHOUS-SILICON LAYER ON CRYSTALLINE SILICON |
LAIH,LH; TSAY,WC; CHEN,YA; JEN,TS; YUANG,RH; HONG,JW |
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[電機工程研究所] 期刊論文 |
1992 |
GRADED-GAP A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES |
HONG,JW; SHIN,NF; JEN,TS; NING,SL; CHANG,CY |
|
[電機工程研究所] 期刊論文 |
1994 |
ELECTROLUMINESCENCE OF A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH QUANTUM-WELL-INJECTION STRUCTURES |
JEN,TS; SHIN,NF; TSAY,WC; CHEN,JY; NING,SL; HONG,JW; CHANG,CY |
|
[電機工程研究所] 期刊論文 |
2003 |
Electrical characteristics of a-SiGe : H thin-film transistors with Sb/Al binary alloy Schottky source/drain contact |
Lin,CS; Yeh,RH; Li,IX; Hong,JW |
|
[電機工程研究所] 期刊論文 |
1997 |
Electrical and luminescent characteristics of alpha-SiC:H p-i-n thin-film LED's with graded-gap junctions |
Jen,TS; Shin,NF; Laih,LH; Chen,YA; Hong,JW; Chang,CY |
|
[電機工程研究所] 期刊論文 |
1994 |
EFFECTS OF N2O-PLASMA TREATMENT OF A-SIOXNY/A-SINX GATE INSULATORS ON ELECTRICAL STABILITY OF A-SIH THIN-FILM TRANSISTORS |
JEN,TS; LEU,ST; CHOU,TC; HONG,JW; CHANG,CY |
|
[物理研究所] 期刊論文 |
1996 |
Effects of dielectrics on the characteristics of large-area silicon microstrip sensors |
Tsay,WC; Chen,YA; Laih,LH; Hong,JW; Chen,AE; Lin,WT; Chang,YH; Hou,SR; Hsu,SL; Li,CR; Ting,HJ; Chiang,ST |
|
[化學工程與材料工程研究所] 期刊論文 |
1996 |
Double graded-gap hydrogenated amorphous silicon carbide thin-film light-emitting diode with composition-graded N layer and carbon-increasing P layer |
Chen,YA; Chen,JK; Tsay,WC; Laih,LH; Hong,JW; Chang,CY |
|
[電機工程研究所] 期刊論文 |
2000 |
Current gain control of near infrared c-Si phototransistors |
Shih,NF; Pai,FJ; Chuang,WJ; Hong,JW |
|
[電機工程研究所] 期刊論文 |
1997 |
Characteristics of Si-based MSM photodetectors with an amorphous-crystalline heterojunction |
Laih,LH; Wang,JC; Chen,YA; Jen,TS; Tsay,WC; Hong,JW |
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