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    Showing items 226-250 of 293. (12 Page(s) Totally)
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    DateTitleAuthors
    2002-07-01 新光折變材料開發及其應用技術之研究---子計畫III：高效率及新光折變材料開發之研究(II); A Study on the High Efficiency and New Photorefractive Materials(II) 張正陽
    2002-07-01 新光折變材料開發及其應用技術之研究---子計畫V：光折變晶體應用於高敏度光學空間與時域感測之研究(II); The Study of High-Sensitive Optical Sensing in Spatial and Temporal Domains with Use of Photorefractive Crystals(II) 孫慶成
    2002-07-01 新光折變材料開發及其應用技術之研究---總計畫：新光折變材料開發及其應用技術之研究(II); A Study on the New Photorefractive Material Growth and Applications Technique(II) 游漢輝; 陳志臣; 孫慶成; 鄭益祥; 張正陽; 藍崇文
    2002 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Chen,JF; Tsai,JM
    2002 Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN Chiou,JW; Mookerjee,S; Rao,KVR; Jan,JC; Tsai,HM; Asokan,K; Pong,WF; Chien,FZ; Tsai,MH; Chang,YK; Chen,YY; Lee,JF; Lee,CC; Chi,GC
    2002 Characterization of Si implants in p-type GaN Sheu,JK; Lee,ML; Tun,CJ; Kao,CJ; Yeh,LS; Chang,SJ; Chi,GC
    2002 Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure Chen,CC; Hsieh,KL; Sheu,JK; Chi,GC; Jou,MJ; Lee,CH; Lin,MZ
    2002 Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes Wu,LW; Chang,SJ; Wen,TC; Su,YK; Chen,JF; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK
    2002 InGaN/GaN light emitting diodes activated in O-2 ambient Kuo,CH; Chang,SJ; Su,YK; Chen,JF; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
    2002 InGaN/GaN tunnel-injection blue light-emitting diodes Wen,TC; Chang,SJ; Wu,LW; Su,YK; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK; Chen,JF
    2002 Low temperature activation of Mg-doped GaN in O-2 ambient Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
    2002 Making shallow traps in barium titanate inactive by reduction Huang,CY; Chang,JY
    2002 n(+)-GaN formed by Si implantation into p-GaN Sheu,JK; Tun,CJ; Tsai,MS; Lee,CC; Chi,GC; Chang,SJ; Su,YK
    2002 Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1-xN capping layers Gessmann,T; Li,YL; Waldron,EL; Graff,JW; Schubert,EF; Sheu,JK
    2002 Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching Wen,TC; Lee,WI; Sheu,JK; Chi,GC
    2002 Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers Gessmann,T; Li,YL; Waldron,EL; Graff,JW; Schubert,EF; Sheu,JK
    2002 The doping process and dopant characteristics of GaN Sheu,JK; Chi,GC
    2002 White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer Sheu,JK; Pan,CJ; Chi,GC; Kuo,CH; Wu,LW; Chen,CH; Chang,SJ; Su,YK
    2001-10-01 新光折變材料開發及其應用技術之研究---子計畫五：光折變晶體應用於高敏度光學空間與時域感測之研究(I); The Study of High-Sensitive Optical Sensing in Spatial and Temporal Domains with Use of Photorefractive Crystals(I) 孫慶成
    2001-10-01 新光折變材料開發及其應用技術之研究---總計畫(I); A Study on the New Photorefractive Material Growth and Applications Technique(I) 游漢輝; 藍崇文; 張正陽; 鄭益祥; 陳志臣; 孫慶成
    2001-07-01 光折變鈦酸鋇單晶之光譜及多波長光折變性質與氣氛處理關係之研究(I); Study on the Spectroscopy and Wavelength Dependence Photorefractive Properties of BaTiO/sub 3/ Crystal with After-Processing(I) 張正陽
    2001-07-01 氮化鎵藍光雷射二極體技術研究---子計畫一：氮化鎵系列材料磊晶技術之研究; Epitaxial Growth of GaN and Related Material 綦振瀛
    2001-07-01 氮化鎵藍光雷射二極體技術研究---子計畫二：氮化鎵系列材料P-N界面之形成及其物性與結構之研究; The Formation of p-n Junction and It's Properties to Structure Correction Study for GaN Mater 紀國鐘
    2001-07-01 氮化鎵藍光雷射二極體技術研究---總計畫; GaN-Based Blue Laser Diodes 綦振瀛
    2001-07-01 新光折變材料開發及其應用技術之研究---子計畫三：高效率及新光折變材料開發之研究(I); A Study on the High Efficiency and New Photorefractive Materials(I) 張正陽

    Showing items 226-250 of 293. (12 Page(s) Totally)
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    View [10|25|50] records per page

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