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"Lai,WC"的相关文件

类别	日期	题名	作者
[光電科學研究中心] 期刊論文	2003	High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact	Chang,CS; Chang,SJ; Su,YK; Kuo,CH; Lai,WC; Lin,YC; Hsu,YP; Shei,SC; Tsai,JM; Lo,HM; Ke,JC; Shen,JK
[光電科學研究中心] 期刊論文	2004	Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact	Chang,SJ; Chang,CS; Su,YK; Chuang,RW; Lai,WC; Kuo,CH; Hsu,YP; Lin,YC; Shei,SC; Lo,HM; Ke,JC; Sheu,JK
[物理研究所] 期刊論文	2003	Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes	Chang,SJ; Chen,CH; Su,YK; Sheu,JK; Lai,WC; Tsai,JM; Liu,CH; Chen,SC
[光電科學研究中心] 期刊論文	2002	400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes	Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Chen,JF; Tsai,JM
[物理研究所] 期刊論文	2003	GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts	Chang,SJ; Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,CS; Kao,CJ; Chi,GC; Tsai,JA
[光電科學與工程學系] 期刊論文	2004	Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers	Chang,SJ; Wu,LW; Su,YK; Hsu,YP; Lai,WC; Tsai,JA; Sheu,JK; Lee,CT
[光電科學研究中心] 期刊論文	2003	Si and Zn co-doped InGaN-GaN white light-emitting diodes	Chang,SJ; Wu,LW; Su,YK; Kuo,CH; Lai,WC; Hsu,YP; Sheu,JK; Chen,SF; Tsai,JM
[物理學系] 期刊論文	2010	Catalyst-free ZnO nanowires grown on a-plane GaN	Chen,CW; Pan,CJ; Tsao,FC; Liu,YL; Kuo,CW; Kuo,CH; Chi,GC; Chen,PH; Lai,WC; Hsueh,TH; Tun,CJ; Chang,CY; Pearton,SJ; Ren,F
[光電科學與工程學系] 期刊論文	2010	GaN-Based Light-Emitting Diodes With Pillar Structures Around the Mesa Region	Chen,PH; Chang,LC; Tsai,CH; Lee,YC; Lai,WC; Wu,ML; Kuo,CH; Sheu,JK
[光電科學與工程學系] 期刊論文	2010	GaN-Based LEDs With AZO:Y Upper Contact	Chen,PH; Lai,WC; Peng,LC; Kuo,CH; Yeh,CL; Sheu,JK; Tun,CJ
[物理研究所] 期刊論文	2005	Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors	Kao,CJ; Chen,MC; Tun,CJ; Chi,GC; Sheu,JK; Lai,WC; Lee,ML; Ren,F; Pearton,SJ
[物理研究所] 期刊論文	2004	Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors	Kao,CJ; Sheu,JK; Lai,WC; Lee,ML; Chen,MC; Chi,GC
[光電科學研究中心] 期刊論文	2004	Nitride-based near-ultraviolet LEDs with an ITO transparent contact	Kuo,CH; Chang,SJ; Su,Y; Chuang,RW; Chang,CS; Wu,LW; Lai,WC; Chen,JF; Sheu,J; Lo,HM; Tsai,JM
[光電科學研究中心] 期刊論文	2003	Nitride-based blue LEDs with GaN/SiN double buffer layers	Kuo,CH; Chang,SJ; Su,YK; Wang,CK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Lin,CC
[光電科學研究中心] 期刊論文	2003	Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers	Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Chen,SC
[光電科學研究所] 期刊論文	2009	Nitride-Based Asymmetric Two-Step Light-Emitting Diode With In0.08Ga0.92N Shallow Step	Kuo,CH; Fu,YK; Yeh,CL; Tun,CJ; Chen,PH; Lai,WC; Chang,SJ
[光電科學與工程學系] 期刊論文	2005	Nitride-based light-emitting diodes with p-AlInGaN surface layers	Kuo,CH; Lin,CC; Chang,SJ; Hsu,YP; Tsai,JM; Lai,WC; Wang,PT
[物理研究所] 期刊論文	2001	InGaN-AlInGaN multiquantum-well LEDs	Lai,WC; Chang,SJ; Yokoyam,M; Sheu,JK; Chen,JF
[光電科學研究所] 期刊論文	2009	GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars	Lai,WC; Chen,PH; Chang,LC; Kuo,CH; Sheu,JK; Tun,CJ; Shei,SC
[物理研究所] 期刊論文	2003	Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,SJ; Kao,CJ; Tun,CJ; Chen,MG; Chang,WH; Chi,GC; Tsai,JM
[光電科學與工程學系] 期刊論文	2004	Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer	Lee,ML; Sheu,JK; Su,YK; Chang,SJ; Lai,WC; Chi,GC
[光電科學研究中心] 期刊論文	2003	White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors	Sheu,JK; Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Lin,YC; Lai,WC; Tsai,JM; Chi,GC; Wu,RK
[物理研究所] 期刊論文	2005	Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metallorganic vapor phase	Sheu,JK; Chen,SS; Lee,ML; Lai,WC; Chi,GC
[物理研究所] 期刊論文	2003	Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer	Sheu,JK; Kao,CJ; Lee,ML; Lai,WC; Yeh,LS; Chi,GC; Chang,SJ; Su,YK; Tsa,JM
[物理研究所] 期刊論文	2005	Rectifying characteristics of WSi0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature	Sheu,JK; Lee,ML; Lai,WC; Tseng,HC; Chi,GC
[光電科學研究中心] 期刊論文	2001	Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer	Sheu,JK; Tsai,JM; Shei,SC; Lai,WC; Wen,TC; Kou,CH; Su,YK; Chang,SJ; Chi,GC
[物理學系] 期刊論文	2011	Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers	Sheu,JK; Tu,SJ; Lee,ML; Yeh,YH; Yang,CC; Huang,FW; Lai,WC; Chen,CW; Chi,GC
[電機工程學系] 期刊論文	2011	Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical-Optical Pump-Probe Technique	Shi,JW; Huang,HW; Kuo,FM; Lai,WC; Lee,ML; Sheu,JK
[電機工程學系] 期刊論文	2010	Very-High Temperature (200 degrees C) and High-Speed Operation of Cascade GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer	Shi,JW; Huang,HW; Kuo,FM; Sheu,JK; Lai,WC; Lee,ML
[電機工程研究所] 期刊論文	2006	Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communications	Shi,JW; Huang,HY; Shell,JK; Hsieh,SH; Wu,YS; Lu,JY; Huang,FH; Lai,WC
[電機工程學系] 期刊論文	2011	The Influence of a Piezoelectric Field on the Dynamic Performance of GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer	Shi,JW; Kuo,FM; Huang,HW; Sheu,JK; Yang,CC; Lai,WC; Lee,ML
[光電科學與工程學系] 期刊論文	2004	Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures	Wen,TC; Chang,SJ; Lee,CT; Lai,WC; Sheu,JK
[光電科學研究中心] 期刊論文	2003	InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping	Wen,TC; Chang,SJ; Su,YK; Wu,LW; Kuo,CH; Lai,WC; Sheu,JK; Tsai,TY
[光電科學研究中心] 期刊論文	2002	InGaN/GaN tunnel-injection blue light-emitting diodes	Wen,TC; Chang,SJ; Wu,LW; Su,YK; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK; Chen,JF
[光電科學研究中心] 期刊論文	2003	In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer	Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Hsu,YP; Kuo,CH; Lai,WC; Wen,TC; Tsai,JM; Sheu,JK
[光電科學研究中心] 期刊論文	2003	Nitride-based green light-emitting diodes with high temperature GaN barrier layers	Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Wen,TC; Kuo,CH; Lai,WC; Chang,CS; Tsai,JM; Sheu,JK
[光電科學研究中心] 期刊論文	2003	InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer	Wu,LW; Chang,SJ; Su,YK; Tsai,TY; Wen,TC; Kuo,CH; Lai,WC; Sheu,JK; Tsai,JM; Chen,SC; Huang,BR
[光電科學研究中心] 期刊論文	2002	Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes	Wu,LW; Chang,SJ; Wen,TC; Su,YK; Chen,JF; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK

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