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    类别 日期 题名 作者 档案
    [光電科學研究中心] 期刊論文 2002 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Chen,JF; Tsai,JM
    [物理研究所] 期刊論文 1996 AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology Chang,SJ; Sheu,JK; Su,YK; Jou,MJ; Chi,GC
    [光電科學研究中心] 期刊論文 2003 Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths Li,YL; Gessmann,T; Schubert,EF; Sheu,JK
    [物理研究所] 期刊論文 2003 Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,SJ; Kao,CJ; Tun,CJ; Chen,MG; Chang,WH; Chi,GC; Tsai,JM
    [光電科學研究中心] 期刊論文 2001 Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition Wen,TC; Lee,WI; Sheu,JK; Chi,GC
    [光電科學研究中心] 期刊論文 2002 Characterization of Si implants in p-type GaN Sheu,JK; Lee,ML; Tun,CJ; Kao,CJ; Yeh,LS; Chang,SJ; Chi,GC
    [光電科學研究中心] 期刊論文 2001 Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices Sheu,JK; Kuo,CH; Chen,CC; Chi,GC; Jou,MJ
    [物理研究所] 期刊論文 2005 Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors Kao,CJ; Chen,MC; Tun,CJ; Chi,GC; Sheu,JK; Lai,WC; Lee,ML; Ren,F; Pearton,SJ
    [物理研究所] 期刊論文 2001 Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures Chen,CC; Hsieh,KL; Sheu,JK; Chi,GC; Jou,MJ; Lee,CH; Lin,MZ
    [光電科學研究中心] 期刊論文 2003 Deep level defect in Si-implanted GaN n(+)-p junction Chen,XD; Huang,Y; Fung,S; Beling,CD; Ling,CC; Sheu,JK; Lee,ML; Chi,GC; Chang,SJ
    [光電科學研究中心] 期刊論文 2002 Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure Chen,CC; Hsieh,KL; Sheu,JK; Chi,GC; Jou,MJ; Lee,CH; Lin,MZ
    [電機工程研究所] 期刊論文 2005 Effect of Cl-2/Ar dry etching on p-GaN with Ni/Au metallization characterization Hsueh,KP; Hsu,HT; Wang,CM; Huang,SC; Hsin,YM; Sheu,JK
    [物理研究所] 期刊論文 2004 Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors Kao,CJ; Sheu,JK; Lai,WC; Lee,ML; Chen,MC; Chi,GC
    [物理研究所] 期刊論文 2006 Effects of thermal annealing on Al-doped ZnO films deposited on p-type gallium nitride Tun,CJ; Sheu,JK; Lee,ML; Hu,CC; Hsieh,CK; Chi,GC
    [物理研究所] 期刊論文 2005 Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metallorganic vapor phase Sheu,JK; Chen,SS; Lee,ML; Lai,WC; Chi,GC
    [物理研究所] 期刊論文 1998 Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN Sheu,JK; Su,YK; Chi,GC; Jou,MJ; Chang,CM
    [物理研究所] 期刊論文 1998 Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers Sheu,JK; Su,YK; Chang,SJ; Chi,GC; Lin,KB; Liu,CC; Chiu,CC
    [光電科學與工程學系] 期刊論文 2003 Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry Ting,YS; Chen,CC; Sheu,JK; Chi,GC; Hsu,JT
    [機械工程研究所] 期刊論文 2009 Electrical-optical analysis of a GaN/sapphire LED chip by considering the resistivity of the current-spreading layer Chen,JC; Sheu,GJ; Hwu,FS; Chen,HI; Sheu,JK; Lee,TX; Sun,CC
    [物理學系] 期刊論文 2011 Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers Sheu,JK; Tu,SJ; Lee,ML; Yeh,YH; Yang,CC; Huang,FW; Lai,WC; Chen,CW; Chi,GC
    [光電科學研究中心] 期刊論文 2001 Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer Sheu,JK; Chi,GC; Jou,MJ
    [光電科學研究中心] 期刊論文 2003 Experimental study of perpendicular transport in weakly coupled AlxGa1-xN/GaN superlattices Waldron,EL; Li,YL; Schubert,EF; Graff,JW; Sheu,JK
    [光電科學與工程學系] 期刊論文 2003 Gallium nitride diffractive microlenses using in ultraviolet micro-optics system Hou,CH; Li,MH; Chen,CC; Chang,JY; Sheu,JK; Chi,GC; Wu,C; Cheng,WT; Yeh,JH
    [光電科學與工程學系] 期刊論文 2001 GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals Su,YK; Chiou,YZ; Juang,FS; Chang,SJ; Sheu,JK
    [光電科學與工程學系] 期刊論文 2010 GaN-Based LEDs With AZO:Y Upper Contact Chen,PH; Lai,WC; Peng,LC; Kuo,CH; Yeh,CL; Sheu,JK; Tun,CJ
    [光電科學研究所] 期刊論文 2009 GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars Lai,WC; Chen,PH; Chang,LC; Kuo,CH; Sheu,JK; Tun,CJ; Shei,SC
    [光電科學與工程學系] 期刊論文 2010 GaN-Based Light-Emitting Diodes With Pillar Structures Around the Mesa Region Chen,PH; Chang,LC; Tsai,CH; Lee,YC; Lai,WC; Wu,ML; Kuo,CH; Sheu,JK
    [物理研究所] 期刊論文 2003 GaN diffractive microlenses fabricated with gray-level mask Chen,CC; Li,MH; Chang,CY; Sheu,JK; Chi,GC; Cheng,WT; Yeh,JH; Chang,JY; Ito,T
    [物理研究所] 期刊論文 2003 GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts Chang,SJ; Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,CS; Kao,CJ; Chi,GC; Tsai,JA
    [物理研究所] 期刊論文 2001 GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts Chen,CH; Chang,SJ; Su,YK; Chi,GC; Chi,JY; Chang,CA; Sheu,JK; Chen,JF
    [物理研究所] 期刊論文 2002 GaN p-n junction diode formed by Si ion implantation into p-GaN Lee,ML; Sheu,JK; Yeh,LS; Tsai,MS; Kao,CJ; Tun,CJ; Chang,SJ; Chi,GC
    [光電科學與工程學系] 期刊論文 2004 Gratings in GaN membranes Chen,CC; Hou,CH; Sheu,JK; Chang,JY; Li,MH; Chi,GC; Wu,C
    [物理研究所] 期刊論文 2002 High brightness green light emitting diodes with charge asymmetric resonance tunneling structure Chen,CH; Su,YK; Chang,SJ; Chi,GC; Sheu,JK; Chen,JF; Liu,CH; Liaw,YH
    [光電科學與工程學系] 期刊論文 2000 High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure Tu,LW; Kuo,WC; Lee,KH; Tsao,PH; Lai,CM; Chu,AK; Sheu,JK
    [物理研究所] 期刊論文 2002 High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures Chen,CH; Chang,SJ; Su,YK; Chi,GC; Sheu,JK; Chen,JF
    [物理研究所] 期刊論文 1999 High-transparency Ni/Au ohmic contact to p-type GaN Sheu,JK; Su,YK; Chi,GC; Koh,PL; Jou,MJ; Chang,CM; Liu,CC; Hung,WC
    [光電科學與工程學系] 期刊論文 2005 ICP etching of sapphire substrates Hsu,YP; Chang,SJ; Su,YK; Sheu,JK; Kuo,CH; Chang,CS; Shei,SC
    [物理研究所] 期刊論文 2003 Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes Chang,SJ; Chen,CH; Su,YK; Sheu,JK; Lai,WC; Tsai,JM; Liu,CH; Chen,SC
    [光電科學與工程學系] 期刊論文 2003 Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers Tu,RC; Tun,CJ; Pan,SM; Liu,HP; Tsai,CE; Sheu,JK; Chuo,CC; Wang,TC; Chi,GC; Chen,IG
    [光電科學與工程學系] 期刊論文 2003 Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature Tu,RC; Tun,CJ; Pan,SM; Chuo,CC; Sheu,JK; Tsai,CE; Wang,TC; Chi,GC
    [光電科學研究中心] 期刊論文 2003 In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Hsu,YP; Kuo,CH; Lai,WC; Wen,TC; Tsai,JM; Sheu,JK
    [物理研究所] 期刊論文 1999 Indium tin oxide ohmic contact to highly doped n-GaN Sheu,JK; Su,YK; Chi,GC; Jou,MJ; Liu,CC; Chang,CM
    [物理研究所] 期刊論文 1999 Inductively coupled plasma etching of GaN using Cl-2/Ar and Cl-2/N-2 gases Sheu,JK; Su,YK; Chi,GC; Jou,MJ; Liu,CC; Chang,CM; Hung,WC
    [光電科學研究中心] 期刊論文 2002 Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes Wu,LW; Chang,SJ; Wen,TC; Su,YK; Chen,JF; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK
    [光電科學研究中心] 期刊論文 2003 InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer Wu,LW; Chang,SJ; Su,YK; Tsai,TY; Wen,TC; Kuo,CH; Lai,WC; Sheu,JK; Tsai,JM; Chen,SC; Huang,BR
    [光電科學研究中心] 期刊論文 2002 InGaN/GaN light emitting diodes activated in O-2 ambient Kuo,CH; Chang,SJ; Su,YK; Chen,JF; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
    [光電科學研究中心] 期刊論文 2003 InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping Wen,TC; Chang,SJ; Su,YK; Wu,LW; Kuo,CH; Lai,WC; Sheu,JK; Tsai,TY
    [光電科學研究中心] 期刊論文 2002 InGaN/GaN tunnel-injection blue light-emitting diodes Wen,TC; Chang,SJ; Wu,LW; Su,YK; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK; Chen,JF
    [物理研究所] 期刊論文 2001 InGaN-AlInGaN multiquantum-well LEDs Lai,WC; Chang,SJ; Yokoyam,M; Sheu,JK; Chen,JF
    [光電科學與工程學系] 期刊論文 2010 InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer Tu,SH; Lan,CJ; Wang,SH; Lee,ML; Chang,KH; Lin,RM; Chang,JY; Sheu,JK
    [電機工程學系] 期刊論文 2011 Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical-Optical Pump-Probe Technique Shi,JW; Huang,HW; Kuo,FM; Lai,WC; Lee,ML; Sheu,JK
    [電機工程學系] 期刊論文 2011 Investigation of the Efficiency-Droop Mechanism in Vertical Red Light-Emitting Diodes Using a Dynamic Measurement Technique Shi,JW; Kuo,FM; Lin,CW; Chen,W; Yan,LJ; Sheu,JK
    [物理研究所] 期刊論文 2000 Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces Sheu,JK; Su,YK; Chi,GC; Jou,MJ; Liu,CC; Chang,CM; Hung,WC; Bow,JS; Yu,YC
    [物理研究所] 期刊論文 1998 Investigation of wafer-bonded (AlxGa1-x)(0.5)In0.5P/GaP light-emitting diodes Sheu,JK; Su,YK; Chang,SJ; Jou,MJ; Liu,CC; Chi,GC
    [光電科學與工程學系] 期刊論文 2004 Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs Hsu,YP; Chang,SJ; Su,YK; Sheu,JK; Lee,CT; Wen,TC; Wu,LW; Kuo,CH; Chang,CS; Shei,SC
    [光電科學研究中心] 期刊論文 2001 Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice Sheu,JK; Chi,GC; Jou,MJ
    [光電科學研究中心] 期刊論文 2001 Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer Sheu,JK; Tsai,JM; Shei,SC; Lai,WC; Wen,TC; Kou,CH; Su,YK; Chang,SJ; Chi,GC
    [光電科學與工程學系] 期刊論文 2001 Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices Kuo,CH; Sheu,JK; Chi,GC; Huang,YL; Yeh,TW
    [電機工程研究所] 期刊論文 2006 Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer Hsueh,KP; Hsin,YM; Sheu,JK
    [光電科學研究中心] 期刊論文 2002 Low temperature activation of Mg-doped GaN in O-2 ambient Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
    [物理研究所] 期刊論文 2000 Luminescence of an InGaN/GaN multiple quantum well light-emitting diode Sheu,JK; Chi,GC; Su,YK; Liu,CC; Chang,CM; Hung,WC; Jou,MJ
    [光電科學研究中心] 期刊論文 2002 n(+)-GaN formed by Si implantation into p-GaN Sheu,JK; Tun,CJ; Tsai,MS; Lee,CC; Chi,GC; Chang,SJ; Su,YK
    [光電科學研究中心] 期刊論文 2003 Nitride-based blue LEDs with GaN/SiN double buffer layers Kuo,CH; Chang,SJ; Su,YK; Wang,CK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Lin,CC
    [物理研究所] 期刊論文 2002 Nitride-based cascade near white light-emitting diodes Chen,CH; Chang,SJ; Su,YK; Sheu,JK; Chen,JF; Kuo,CH; Lin,YC
    [光電科學研究中心] 期刊論文 2003 Nitride-based green light-emitting diodes with high temperature GaN barrier layers Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Wen,TC; Kuo,CH; Lai,WC; Chang,CS; Tsai,JM; Sheu,JK
    [光電科學與工程學系] 期刊論文 2004 Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers Chang,SJ; Wu,LW; Su,YK; Hsu,YP; Lai,WC; Tsai,JA; Sheu,JK; Lee,CT
    [光電科學研究中心] 期刊論文 2004 Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact Chang,SJ; Chang,CS; Su,YK; Chuang,RW; Lai,WC; Kuo,CH; Hsu,YP; Lin,YC; Shei,SC; Lo,HM; Ke,JC; Sheu,JK
    [光電科學與工程學系] 期刊論文 2004 Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures Wen,TC; Chang,SJ; Lee,CT; Lai,WC; Sheu,JK
    [光電科學研究中心] 期刊論文 2003 Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Chen,SC
    [物理研究所] 期刊論文 2003 Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer Sheu,JK; Kao,CJ; Lee,ML; Lai,WC; Yeh,LS; Chi,GC; Chang,SJ; Su,YK; Tsa,JM
    [光電科學研究中心] 期刊論文 2002 Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1-xN capping layers Gessmann,T; Li,YL; Waldron,EL; Graff,JW; Schubert,EF; Sheu,JK
    [光電科學研究中心] 期刊論文 2003 n-UV plus blue/green/red white light emitting diode lamps Kuo,CH; Sheu,JK; Chang,SJ; Su,YK; Wu,LW; Tsai,JM; Liu,CH; Wu,RK
    [光電科學研究中心] 期刊論文 2002 Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching Wen,TC; Lee,WI; Sheu,JK; Chi,GC
    [光電科學研究中心] 期刊論文 2002 Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers Gessmann,T; Li,YL; Waldron,EL; Graff,JW; Schubert,EF; Sheu,JK
    [光電科學研究中心] 期刊論文 2000 Optical properties in InGaN/GaN multiple quantum wells and blue LEDs Su,YK; Chi,GC; Sheu,JK
    [物理研究所] 期刊論文 1998 Photoluminescence spectroscopy of Mg-doped GaN Sheu,JK; Su,YK; Chi,GC; Pong,BJ; Chen,CY; Huang,CN; Chen,WC
    [光電科學與工程學系] 期刊論文 2002 Piezoelectric effect on Al0.35-delta In delta Ga0.65N/GaN heterostructures Lo,I; Tsai,JK; Tu,LW; Hsieh,KY; Tsai,MH; Liu,CS; Huang,JH; Elhamri,S; Mitchel,WC; Sheu,JK
    [物理研究所] 期刊論文 2002 Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN Sheu,JK; Lee,ML; Yeh,LS; Kao,CJ; Tun,CJ; Chen,MG; Chi,GC; Chang,SJ; Su,YK; Lee,CT
    [光電科學與工程學系] 期刊論文 2001 Polymer PBT/n-GaN metal-insulator-semiconductor structure Tu,LW; Tsao,PH; Lee,KH; Lo,I; Bai,SJ; Wu,CC; Hsieh,KY; Sheu,JK
    [物理研究所] 期刊論文 2005 Rectifying characteristics of WSi0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature Sheu,JK; Lee,ML; Lai,WC; Tseng,HC; Chi,GC
    [光電科學與工程學系] 期刊論文 2004 Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer Lee,ML; Sheu,JK; Su,YK; Chang,SJ; Lai,WC; Chi,GC
    [光電科學研究中心] 期刊論文 2003 Si and Zn co-doped InGaN-GaN white light-emitting diodes Chang,SJ; Wu,LW; Su,YK; Kuo,CH; Lai,WC; Hsu,YP; Sheu,JK; Chen,SF; Tsai,JM
    [光電科學與工程學系] 期刊論文 2004 Si diffusion in p-GaN Pan,CJ; Chi,GC; Pong,BJ; Sheu,JK; Chen,JY
    [光電科學研究中心] 期刊論文 2002 The doping process and dopant characteristics of GaN Sheu,JK; Chi,GC
    [光電科學研究中心] 期刊論文 2000 The doping process of p-type GaN films Chi,GC; Kuo,CH; Sheu,JK; Pan,CJ
    [物理研究所] 期刊論文 1998 The effect of thermal annealing on the Ni/Au contact of p-type GaN Sheu,JK; Su,YK; Chi,GC; Chen,WC; Chen,CY; Huang,CN; Hong,JM; Yu,YC; Wang,CW; Lin,EK
    [電機工程學系] 期刊論文 2011 The Influence of a Piezoelectric Field on the Dynamic Performance of GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer Shi,JW; Kuo,FM; Huang,HW; Sheu,JK; Yang,CC; Lai,WC; Lee,ML
    [物理研究所] 期刊論文 2001 Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching Chen,CHS; Chang,SJ; Su,YKI; Chi,GC; Sheu,JK; Lin,IC
    [電機工程學系] 期刊論文 2010 Very-High Temperature (200 degrees C) and High-Speed Operation of Cascade GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer Shi,JW; Huang,HW; Kuo,FM; Sheu,JK; Lai,WC; Lee,ML
    [物理研究所] 期刊論文 2003 Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure Yeh,LS; Lee,ML; Sheu,JK; Chen,MG; Kao,CJ; Chi,GC; Chang,SJ; Su,YK
    [光電科學研究中心] 期刊論文 2002 White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer Sheu,JK; Pan,CJ; Chi,GC; Kuo,CH; Wu,LW; Chen,CH; Chang,SJ; Su,YK
    [光電科學研究中心] 期刊論文 2003 White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors Sheu,JK; Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Lin,YC; Lai,WC; Tsai,JM; Chi,GC; Wu,RK

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