English  |  正體中文  |  简体中文  |  Items with full text/Total items : 70585/70585 (100%)
Visitors : 23064874      Online Users : 497
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Loading community tree, please wait....


    Loading year class tree, please wait....

    Items for Author "Sheu,JK" 

    Return to Browse by Author

    Showing 92 items.

    Collection Date Title Authors Bitstream
    [光電科學研究中心] 期刊論文 2003 White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors Sheu,JK; Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Lin,YC; Lai,WC; Tsai,JM; Chi,GC; Wu,RK
    [光電科學研究中心] 期刊論文 2002 White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer Sheu,JK; Pan,CJ; Chi,GC; Kuo,CH; Wu,LW; Chen,CH; Chang,SJ; Su,YK
    [物理研究所] 期刊論文 2003 Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure Yeh,LS; Lee,ML; Sheu,JK; Chen,MG; Kao,CJ; Chi,GC; Chang,SJ; Su,YK
    [電機工程學系] 期刊論文 2010 Very-High Temperature (200 degrees C) and High-Speed Operation of Cascade GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer Shi,JW; Huang,HW; Kuo,FM; Sheu,JK; Lai,WC; Lee,ML
    [物理研究所] 期刊論文 2001 Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching Chen,CHS; Chang,SJ; Su,YKI; Chi,GC; Sheu,JK; Lin,IC
    [電機工程學系] 期刊論文 2011 The Influence of a Piezoelectric Field on the Dynamic Performance of GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer Shi,JW; Kuo,FM; Huang,HW; Sheu,JK; Yang,CC; Lai,WC; Lee,ML
    [物理研究所] 期刊論文 1998 The effect of thermal annealing on the Ni/Au contact of p-type GaN Sheu,JK; Su,YK; Chi,GC; Chen,WC; Chen,CY; Huang,CN; Hong,JM; Yu,YC; Wang,CW; Lin,EK
    [光電科學研究中心] 期刊論文 2000 The doping process of p-type GaN films Chi,GC; Kuo,CH; Sheu,JK; Pan,CJ
    [光電科學研究中心] 期刊論文 2002 The doping process and dopant characteristics of GaN Sheu,JK; Chi,GC
    [光電科學與工程學系] 期刊論文 2004 Si diffusion in p-GaN Pan,CJ; Chi,GC; Pong,BJ; Sheu,JK; Chen,JY
    [光電科學研究中心] 期刊論文 2003 Si and Zn co-doped InGaN-GaN white light-emitting diodes Chang,SJ; Wu,LW; Su,YK; Kuo,CH; Lai,WC; Hsu,YP; Sheu,JK; Chen,SF; Tsai,JM
    [光電科學與工程學系] 期刊論文 2004 Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer Lee,ML; Sheu,JK; Su,YK; Chang,SJ; Lai,WC; Chi,GC
    [物理研究所] 期刊論文 2005 Rectifying characteristics of WSi0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature Sheu,JK; Lee,ML; Lai,WC; Tseng,HC; Chi,GC
    [光電科學與工程學系] 期刊論文 2001 Polymer PBT/n-GaN metal-insulator-semiconductor structure Tu,LW; Tsao,PH; Lee,KH; Lo,I; Bai,SJ; Wu,CC; Hsieh,KY; Sheu,JK
    [物理研究所] 期刊論文 2002 Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN Sheu,JK; Lee,ML; Yeh,LS; Kao,CJ; Tun,CJ; Chen,MG; Chi,GC; Chang,SJ; Su,YK; Lee,CT
    [光電科學與工程學系] 期刊論文 2002 Piezoelectric effect on Al0.35-delta In delta Ga0.65N/GaN heterostructures Lo,I; Tsai,JK; Tu,LW; Hsieh,KY; Tsai,MH; Liu,CS; Huang,JH; Elhamri,S; Mitchel,WC; Sheu,JK
    [物理研究所] 期刊論文 1998 Photoluminescence spectroscopy of Mg-doped GaN Sheu,JK; Su,YK; Chi,GC; Pong,BJ; Chen,CY; Huang,CN; Chen,WC
    [光電科學研究中心] 期刊論文 2000 Optical properties in InGaN/GaN multiple quantum wells and blue LEDs Su,YK; Chi,GC; Sheu,JK
    [光電科學研究中心] 期刊論文 2002 Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers Gessmann,T; Li,YL; Waldron,EL; Graff,JW; Schubert,EF; Sheu,JK
    [光電科學研究中心] 期刊論文 2002 Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching Wen,TC; Lee,WI; Sheu,JK; Chi,GC
    [光電科學研究中心] 期刊論文 2003 n-UV plus blue/green/red white light emitting diode lamps Kuo,CH; Sheu,JK; Chang,SJ; Su,YK; Wu,LW; Tsai,JM; Liu,CH; Wu,RK
    [光電科學研究中心] 期刊論文 2002 Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1-xN capping layers Gessmann,T; Li,YL; Waldron,EL; Graff,JW; Schubert,EF; Sheu,JK
    [物理研究所] 期刊論文 2003 Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer Sheu,JK; Kao,CJ; Lee,ML; Lai,WC; Yeh,LS; Chi,GC; Chang,SJ; Su,YK; Tsa,JM
    [光電科學研究中心] 期刊論文 2003 Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Chen,SC
    [光電科學與工程學系] 期刊論文 2004 Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures Wen,TC; Chang,SJ; Lee,CT; Lai,WC; Sheu,JK
    [光電科學研究中心] 期刊論文 2004 Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact Chang,SJ; Chang,CS; Su,YK; Chuang,RW; Lai,WC; Kuo,CH; Hsu,YP; Lin,YC; Shei,SC; Lo,HM; Ke,JC; Sheu,JK
    [光電科學與工程學系] 期刊論文 2004 Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers Chang,SJ; Wu,LW; Su,YK; Hsu,YP; Lai,WC; Tsai,JA; Sheu,JK; Lee,CT
    [光電科學研究中心] 期刊論文 2003 Nitride-based green light-emitting diodes with high temperature GaN barrier layers Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Wen,TC; Kuo,CH; Lai,WC; Chang,CS; Tsai,JM; Sheu,JK
    [物理研究所] 期刊論文 2002 Nitride-based cascade near white light-emitting diodes Chen,CH; Chang,SJ; Su,YK; Sheu,JK; Chen,JF; Kuo,CH; Lin,YC
    [光電科學研究中心] 期刊論文 2003 Nitride-based blue LEDs with GaN/SiN double buffer layers Kuo,CH; Chang,SJ; Su,YK; Wang,CK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Lin,CC
    [光電科學研究中心] 期刊論文 2002 n(+)-GaN formed by Si implantation into p-GaN Sheu,JK; Tun,CJ; Tsai,MS; Lee,CC; Chi,GC; Chang,SJ; Su,YK
    [物理研究所] 期刊論文 2000 Luminescence of an InGaN/GaN multiple quantum well light-emitting diode Sheu,JK; Chi,GC; Su,YK; Liu,CC; Chang,CM; Hung,WC; Jou,MJ
    [光電科學研究中心] 期刊論文 2002 Low temperature activation of Mg-doped GaN in O-2 ambient Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
    [電機工程研究所] 期刊論文 2006 Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer Hsueh,KP; Hsin,YM; Sheu,JK
    [光電科學與工程學系] 期刊論文 2001 Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices Kuo,CH; Sheu,JK; Chi,GC; Huang,YL; Yeh,TW
    [光電科學研究中心] 期刊論文 2001 Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer Sheu,JK; Tsai,JM; Shei,SC; Lai,WC; Wen,TC; Kou,CH; Su,YK; Chang,SJ; Chi,GC
    [光電科學研究中心] 期刊論文 2001 Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice Sheu,JK; Chi,GC; Jou,MJ
    [光電科學與工程學系] 期刊論文 2004 Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs Hsu,YP; Chang,SJ; Su,YK; Sheu,JK; Lee,CT; Wen,TC; Wu,LW; Kuo,CH; Chang,CS; Shei,SC
    [物理研究所] 期刊論文 1998 Investigation of wafer-bonded (AlxGa1-x)(0.5)In0.5P/GaP light-emitting diodes Sheu,JK; Su,YK; Chang,SJ; Jou,MJ; Liu,CC; Chi,GC
    [物理研究所] 期刊論文 2000 Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces Sheu,JK; Su,YK; Chi,GC; Jou,MJ; Liu,CC; Chang,CM; Hung,WC; Bow,JS; Yu,YC
    [電機工程學系] 期刊論文 2011 Investigation of the Efficiency-Droop Mechanism in Vertical Red Light-Emitting Diodes Using a Dynamic Measurement Technique Shi,JW; Kuo,FM; Lin,CW; Chen,W; Yan,LJ; Sheu,JK
    [電機工程學系] 期刊論文 2011 Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical-Optical Pump-Probe Technique Shi,JW; Huang,HW; Kuo,FM; Lai,WC; Lee,ML; Sheu,JK
    [光電科學與工程學系] 期刊論文 2010 InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer Tu,SH; Lan,CJ; Wang,SH; Lee,ML; Chang,KH; Lin,RM; Chang,JY; Sheu,JK
    [物理研究所] 期刊論文 2001 InGaN-AlInGaN multiquantum-well LEDs Lai,WC; Chang,SJ; Yokoyam,M; Sheu,JK; Chen,JF
    [光電科學研究中心] 期刊論文 2002 InGaN/GaN tunnel-injection blue light-emitting diodes Wen,TC; Chang,SJ; Wu,LW; Su,YK; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK; Chen,JF
    [光電科學研究中心] 期刊論文 2003 InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping Wen,TC; Chang,SJ; Su,YK; Wu,LW; Kuo,CH; Lai,WC; Sheu,JK; Tsai,TY
    [光電科學研究中心] 期刊論文 2002 InGaN/GaN light emitting diodes activated in O-2 ambient Kuo,CH; Chang,SJ; Su,YK; Chen,JF; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
    [光電科學研究中心] 期刊論文 2003 InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer Wu,LW; Chang,SJ; Su,YK; Tsai,TY; Wen,TC; Kuo,CH; Lai,WC; Sheu,JK; Tsai,JM; Chen,SC; Huang,BR
    [光電科學研究中心] 期刊論文 2002 Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes Wu,LW; Chang,SJ; Wen,TC; Su,YK; Chen,JF; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK
    [物理研究所] 期刊論文 1999 Inductively coupled plasma etching of GaN using Cl-2/Ar and Cl-2/N-2 gases Sheu,JK; Su,YK; Chi,GC; Jou,MJ; Liu,CC; Chang,CM; Hung,WC
    [物理研究所] 期刊論文 1999 Indium tin oxide ohmic contact to highly doped n-GaN Sheu,JK; Su,YK; Chi,GC; Jou,MJ; Liu,CC; Chang,CM
    [光電科學研究中心] 期刊論文 2003 In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Hsu,YP; Kuo,CH; Lai,WC; Wen,TC; Tsai,JM; Sheu,JK
    [光電科學與工程學系] 期刊論文 2003 Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature Tu,RC; Tun,CJ; Pan,SM; Chuo,CC; Sheu,JK; Tsai,CE; Wang,TC; Chi,GC
    [光電科學與工程學系] 期刊論文 2003 Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers Tu,RC; Tun,CJ; Pan,SM; Liu,HP; Tsai,CE; Sheu,JK; Chuo,CC; Wang,TC; Chi,GC; Chen,IG
    [物理研究所] 期刊論文 2003 Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes Chang,SJ; Chen,CH; Su,YK; Sheu,JK; Lai,WC; Tsai,JM; Liu,CH; Chen,SC
    [光電科學與工程學系] 期刊論文 2005 ICP etching of sapphire substrates Hsu,YP; Chang,SJ; Su,YK; Sheu,JK; Kuo,CH; Chang,CS; Shei,SC
    [物理研究所] 期刊論文 1999 High-transparency Ni/Au ohmic contact to p-type GaN Sheu,JK; Su,YK; Chi,GC; Koh,PL; Jou,MJ; Chang,CM; Liu,CC; Hung,WC
    [物理研究所] 期刊論文 2002 High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures Chen,CH; Chang,SJ; Su,YK; Chi,GC; Sheu,JK; Chen,JF
    [光電科學與工程學系] 期刊論文 2000 High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure Tu,LW; Kuo,WC; Lee,KH; Tsao,PH; Lai,CM; Chu,AK; Sheu,JK
    [物理研究所] 期刊論文 2002 High brightness green light emitting diodes with charge asymmetric resonance tunneling structure Chen,CH; Su,YK; Chang,SJ; Chi,GC; Sheu,JK; Chen,JF; Liu,CH; Liaw,YH
    [光電科學與工程學系] 期刊論文 2004 Gratings in GaN membranes Chen,CC; Hou,CH; Sheu,JK; Chang,JY; Li,MH; Chi,GC; Wu,C
    [物理研究所] 期刊論文 2002 GaN p-n junction diode formed by Si ion implantation into p-GaN Lee,ML; Sheu,JK; Yeh,LS; Tsai,MS; Kao,CJ; Tun,CJ; Chang,SJ; Chi,GC
    [物理研究所] 期刊論文 2001 GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts Chen,CH; Chang,SJ; Su,YK; Chi,GC; Chi,JY; Chang,CA; Sheu,JK; Chen,JF
    [物理研究所] 期刊論文 2003 GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts Chang,SJ; Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,CS; Kao,CJ; Chi,GC; Tsai,JA
    [物理研究所] 期刊論文 2003 GaN diffractive microlenses fabricated with gray-level mask Chen,CC; Li,MH; Chang,CY; Sheu,JK; Chi,GC; Cheng,WT; Yeh,JH; Chang,JY; Ito,T
    [光電科學與工程學系] 期刊論文 2010 GaN-Based Light-Emitting Diodes With Pillar Structures Around the Mesa Region Chen,PH; Chang,LC; Tsai,CH; Lee,YC; Lai,WC; Wu,ML; Kuo,CH; Sheu,JK
    [光電科學研究所] 期刊論文 2009 GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars Lai,WC; Chen,PH; Chang,LC; Kuo,CH; Sheu,JK; Tun,CJ; Shei,SC
    [光電科學與工程學系] 期刊論文 2010 GaN-Based LEDs With AZO:Y Upper Contact Chen,PH; Lai,WC; Peng,LC; Kuo,CH; Yeh,CL; Sheu,JK; Tun,CJ
    [光電科學與工程學系] 期刊論文 2001 GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals Su,YK; Chiou,YZ; Juang,FS; Chang,SJ; Sheu,JK
    [光電科學與工程學系] 期刊論文 2003 Gallium nitride diffractive microlenses using in ultraviolet micro-optics system Hou,CH; Li,MH; Chen,CC; Chang,JY; Sheu,JK; Chi,GC; Wu,C; Cheng,WT; Yeh,JH
    [光電科學研究中心] 期刊論文 2003 Experimental study of perpendicular transport in weakly coupled AlxGa1-xN/GaN superlattices Waldron,EL; Li,YL; Schubert,EF; Graff,JW; Sheu,JK
    [光電科學研究中心] 期刊論文 2001 Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer Sheu,JK; Chi,GC; Jou,MJ
    [物理學系] 期刊論文 2011 Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers Sheu,JK; Tu,SJ; Lee,ML; Yeh,YH; Yang,CC; Huang,FW; Lai,WC; Chen,CW; Chi,GC
    [機械工程研究所] 期刊論文 2009 Electrical-optical analysis of a GaN/sapphire LED chip by considering the resistivity of the current-spreading layer Chen,JC; Sheu,GJ; Hwu,FS; Chen,HI; Sheu,JK; Lee,TX; Sun,CC
    [光電科學與工程學系] 期刊論文 2003 Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry Ting,YS; Chen,CC; Sheu,JK; Chi,GC; Hsu,JT
    [物理研究所] 期刊論文 1998 Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers Sheu,JK; Su,YK; Chang,SJ; Chi,GC; Lin,KB; Liu,CC; Chiu,CC
    [物理研究所] 期刊論文 1998 Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN Sheu,JK; Su,YK; Chi,GC; Jou,MJ; Chang,CM
    [物理研究所] 期刊論文 2005 Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metallorganic vapor phase Sheu,JK; Chen,SS; Lee,ML; Lai,WC; Chi,GC
    [物理研究所] 期刊論文 2006 Effects of thermal annealing on Al-doped ZnO films deposited on p-type gallium nitride Tun,CJ; Sheu,JK; Lee,ML; Hu,CC; Hsieh,CK; Chi,GC
    [物理研究所] 期刊論文 2004 Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors Kao,CJ; Sheu,JK; Lai,WC; Lee,ML; Chen,MC; Chi,GC
    [電機工程研究所] 期刊論文 2005 Effect of Cl-2/Ar dry etching on p-GaN with Ni/Au metallization characterization Hsueh,KP; Hsu,HT; Wang,CM; Huang,SC; Hsin,YM; Sheu,JK
    [光電科學研究中心] 期刊論文 2002 Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure Chen,CC; Hsieh,KL; Sheu,JK; Chi,GC; Jou,MJ; Lee,CH; Lin,MZ
    [光電科學研究中心] 期刊論文 2003 Deep level defect in Si-implanted GaN n(+)-p junction Chen,XD; Huang,Y; Fung,S; Beling,CD; Ling,CC; Sheu,JK; Lee,ML; Chi,GC; Chang,SJ
    [物理研究所] 期刊論文 2001 Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures Chen,CC; Hsieh,KL; Sheu,JK; Chi,GC; Jou,MJ; Lee,CH; Lin,MZ
    [物理研究所] 期刊論文 2005 Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors Kao,CJ; Chen,MC; Tun,CJ; Chi,GC; Sheu,JK; Lai,WC; Lee,ML; Ren,F; Pearton,SJ
    [光電科學研究中心] 期刊論文 2001 Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices Sheu,JK; Kuo,CH; Chen,CC; Chi,GC; Jou,MJ
    [光電科學研究中心] 期刊論文 2002 Characterization of Si implants in p-type GaN Sheu,JK; Lee,ML; Tun,CJ; Kao,CJ; Yeh,LS; Chang,SJ; Chi,GC
    [光電科學研究中心] 期刊論文 2001 Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition Wen,TC; Lee,WI; Sheu,JK; Chi,GC
    [物理研究所] 期刊論文 2003 Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,SJ; Kao,CJ; Tun,CJ; Chen,MG; Chang,WH; Chi,GC; Tsai,JM
    [光電科學研究中心] 期刊論文 2003 Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths Li,YL; Gessmann,T; Schubert,EF; Sheu,JK
    [物理研究所] 期刊論文 1996 AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology Chang,SJ; Sheu,JK; Su,YK; Jou,MJ; Chi,GC
    [光電科學研究中心] 期刊論文 2002 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Chen,JF; Tsai,JM

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明