"Chen,GT"的相關文件
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類別 |
日期 |
題名 |
作者 |
檔案 |
| [電機工程研究所] 期刊論文 |
2004 |
2.6 A, 0.69 MW cm(-2) single-chip bulk GaN p-i-n rectifier |
Irokawa,Y; Luo,B; Kang,BS; Kim,J; LaRoche,JR; Ren,F; Baik,KH; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ |
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| [電機工程研究所] 期刊論文 |
2003 |
Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes |
Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
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| [資訊工程研究所] 期刊論文 |
2004 |
Adaptive-CCA on OpenPGP revisited |
Lin,HC; Yen,SM; Chen,GT |
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| [電機工程研究所] 期刊論文 |
2004 |
AlGaN/GaN HEMT based liquid sensors |
Mehandru,R; Luo,B; Kang,BS; Kim,J; Ren,F; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2003 |
Current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers |
Irokawa,Y; Luo,B; Kim,J; LaRoche,JR; Ren,F; Baik,KH; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ |
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| [電機工程研究所] 期刊論文 |
2004 |
DC characteristics of AlGaN/GaN heterostructure field-effect transistors on freestanding GaN substrates |
Irokawa,Y; Luo,B; Ren,F; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ; Pearton,SJ |
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| [電機工程研究所] 期刊論文 |
2003 |
Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors |
Kang,BS; Kim,S; Kim,J; Ren,F; Baik,K; Pearton,SJ; Gila,BP; Abernathy,CR; Pan,CC; Chen,GT; Chyi,JI; Chandrasekaran,V; Sheplak,M; Nishida,T; Chu,SNG |
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| [電機工程研究所] 期刊論文 |
2005 |
Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection |
Chen,WM; Buyanova,IA; Nishibayashi,K; Kayanuma,K; Seo,K; Murayama,A; Oka,Y; Thaler,G; Frazier,R; Abernathy,CR; Ren,F; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2004 |
Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Frazier,RM; Gila,BP; Abernathy,CR; Pearton,SJ; Buyanova,IA; Rudko,GY; Chen,WM; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2004 |
GalGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates |
LaRoche,JR; Luo,B; Ren,F; Baik,KH; Stodilka,D; Gila,B; Abernathy,CR; Pearton,SJ; Usikov,A; Tsvetkov,D; Soukhoveev,V; Gainer,G; Rechnikov,A; Dimitriev,V; Chen,GT; Pan,CC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2004 |
High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes |
Chen,GT; Pan,CC; Fang,CS; Huang,TC; Chyi,JI; Chang,MN; Huang,SB; Hsu,JT |
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| [電機工程研究所] 期刊論文 |
2004 |
Lateral Schottky GaN rectifiers formed by Si+ ion implantation |
Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2002 |
Localized and quantum-well state excitons in AlInGaN laser-diode structure |
Chuo,CC; Chen,GT; Lin,MI; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2004 |
Low damage, Cl-2-based gate recess etching for 0.3-mu m gate-length AlGaN/GaN HEMT fabrication |
Wang,WK; Li,YJ; Lin,CK; Chan,YJ; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2004 |
Low-k BCB passivation on AlGaN-GaN HEMT fabrication |
Wang,WK; Lin,CH; Lin,PC; Lin,CK; Huang,FH; Chan,YJ; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2004 |
Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes |
Pan,CC; Lee,CM; Liu,JW; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2004 |
MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors |
Irokawa,Y; Nakano,Y; Ishiko,M; Kachi,T; Kim,J; Ren,F; Gila,BP; Onstine,AH; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2004 |
On the origin of spin loss in GaMnN/InGaN light-emitting diodes |
Buyanova,IA; Izadifard,M; Chen,WM; Kim,J; Ren,F; Thaler,G; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2004 |
Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes |
Buyanova,IA; Izadifard,M; Storasta,L; Chen,WM; Kim,J; Ren,F; Thaler,G; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2005 |
Optical piezoelectric transducer for nano-ultrasonics |
Lin,KH; Chern,GW; Yu,CT; Liu,TM; Pan,CC; Chen,GT; Chyi,JI; Huang,SW; Li,PC; Sun,CK |
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| [電機工程研究所] 期刊論文 |
2004 |
Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers |
Buyanova,IA; Bergman,JP; Chen,WM; Thaler,G; Frazier,R; Abernathy,CR; Pearton,SJ; Kim,J; Ren,F; Kyrychenko,FV; Stanton,CJ; Pan,CC; Chen,GT; Chyi,J; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2005 |
Performance enhancement by using the n(+)-GaN cap layer and gate recess technology on the AlGaN/GaN HEMTs fabrication. |
Wang,WK; Lin,PC; Lin,CH; Lin,CK; Chan,YJ; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2005 |
Performance enhancement by using the n(+)-GaN cap layer and gate recess technology on the AlGaN-GaNHEMT fabrication |
Wang,WK; Lin,PC; Lin,CH; Lin,CK; Chan,YJ; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2004 |
Reduction of surface-induced current collapse in AlGaN/GaN HFETs on freestanding GaN substrates |
Irokawa,Y; Luo,B; Ren,F; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ |
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| [電機工程學系] 期刊論文 |
2011 |
Roles of Dislocation Density to the Scattering of Nano-acoustic Waves in GaN |
Liu,TM; Sun,SZ; Chang,CF; Chen,GT; Pan,CC; Chyi,JI; Sun,CK |
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| [電機工程研究所] 期刊論文 |
2004 |
Si+ ion implanted MPS bulk GaN diodes |
Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS |
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| [電機工程研究所] 期刊論文 |
2004 |
Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates |
Kang,BS; Ren,F; Irokawa,Y; Baik,KW; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Ko,HJ; Lee,HY |
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| [電機工程研究所] 期刊論文 |
2006 |
Thermal stability improvement by using Pd/NiO/Al/Ti/Au reflective ohmic contacts to p-GaN for flip-chip ultraviolet light-emitting diodes |
Pan,CC; Chen,GT; Hsu,WJ; Lin,CW; Chyi,JI |
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