邻近类别 研究計畫 [208/208] 类别统计 近3年内发表的文件: 0(0.00%) 含全文笔数: 85(100.00%) 文件下载次数统计 下载大于0次: 85(100.00%) 下载大于100次: 85(100.00%) 全文下载总次数: 71892(43.35%) 最后更新时间: 2024-04-26 14:39 上传排行 数据加载中..... 下载排行 数据加载中..... 最近上传 Effect of temperature on CO detecti... The doping process of p-type GaN fi... Optical properties in InGaN/GaN mul... Microstructural evolution in a mult... Low-operation voltage of InGaN/GaN ... Low-operation voltage of InGaN/GaN ... FE calculation of contour integrals... Enhanced output power in an InGaN-G... Characterization of the properties ... Characterization of p-type InxGa1-x...

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日期	题名	作者
1993	EFFECTS OF GRATING SPACING ON THE RONCHI TEST	WAN,DS; CHANG,MW
1995	PERFORMANCE ENHANCEMENT USING WSIX/ITO ELECTRODES IN INGAAS/INALAS MSM PHOTODETECTORS	CHU,CC; CHAN,YJ; YUANG,RH; CHYI,JI; LEE,CT
1996	New types of reflecting prisms and reflecting prism assembly	Lian,TS; Chang,MW
1999	Effects of multiple buffer layers on structural electronic properties of GaN growth by atmospheric pressure Organometallic Vapor Phase Epitaxy	Yang,CC; Wu,MC; Chang,CA; Chi,GC
2000	Microstructural evolution in a multiple composite layer of GaN on sapphire by organometallic vapor phase epitaxy	Yang,CC; Wu,MC; Lee,CH; Chi,GC
2000	Optical properties in InGaN/GaN multiple quantum wells and blue LEDs	Su,YK; Chi,GC; Sheu,JK
2000	The doping process of p-type GaN films	Chi,GC; Kuo,CH; Sheu,JK; Pan,CJ
2001	Activation analysis of rapid thermally annealed Si and Mg co-implanted semi-insulating GaAs	Lee,CC; Wu,LW; Chi,GC
2001	Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition	Wen,TC; Lee,WI; Sheu,JK; Chi,GC
2001	Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices	Sheu,JK; Kuo,CH; Chen,CC; Chi,GC; Jou,MJ
2001	Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer	Sheu,JK; Chi,GC; Jou,MJ
2001	FE calculation of contour integrals in plane anisotropic elastic media with crack surface tractions	Chang,JH; Wu,WH
2001	Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice	Sheu,JK; Chi,GC; Jou,MJ
2001	Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer	Sheu,JK; Tsai,JM; Shei,SC; Lai,WC; Wen,TC; Kou,CH; Su,YK; Chang,SJ; Chi,GC
2002	400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes	Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Chen,JF; Tsai,JM
2002	Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN	Chiou,JW; Mookerjee,S; Rao,KVR; Jan,JC; Tsai,HM; Asokan,K; Pong,WF; Chien,FZ; Tsai,MH; Chang,YK; Chen,YY; Lee,JF; Lee,CC; Chi,GC
2002	Characterization of Si implants in p-type GaN	Sheu,JK; Lee,ML; Tun,CJ; Kao,CJ; Yeh,LS; Chang,SJ; Chi,GC
2002	Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure	Chen,CC; Hsieh,KL; Sheu,JK; Chi,GC; Jou,MJ; Lee,CH; Lin,MZ
2002	Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes	Wu,LW; Chang,SJ; Wen,TC; Su,YK; Chen,JF; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK
2002	InGaN/GaN light emitting diodes activated in O-2 ambient	Kuo,CH; Chang,SJ; Su,YK; Chen,JF; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
2002	InGaN/GaN tunnel-injection blue light-emitting diodes	Wen,TC; Chang,SJ; Wu,LW; Su,YK; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK; Chen,JF
2002	Low temperature activation of Mg-doped GaN in O-2 ambient	Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
2002	Making shallow traps in barium titanate inactive by reduction	Huang,CY; Chang,JY
2002	n(+)-GaN formed by Si implantation into p-GaN	Sheu,JK; Tun,CJ; Tsai,MS; Lee,CC; Chi,GC; Chang,SJ; Su,YK
2002	Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1-xN capping layers	Gessmann,T; Li,YL; Waldron,EL; Graff,JW; Schubert,EF; Sheu,JK
2002	Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching	Wen,TC; Lee,WI; Sheu,JK; Chi,GC
2002	Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers	Gessmann,T; Li,YL; Waldron,EL; Graff,JW; Schubert,EF; Sheu,JK
2002	The doping process and dopant characteristics of GaN	Sheu,JK; Chi,GC
2002	White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer	Sheu,JK; Pan,CJ; Chi,GC; Kuo,CH; Wu,LW; Chen,CH; Chang,SJ; Su,YK
2003	Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths	Li,YL; Gessmann,T; Schubert,EF; Sheu,JK
2003	Deep level defect in Si-implanted GaN n(+)-p junction	Chen,XD; Huang,Y; Fung,S; Beling,CD; Ling,CC; Sheu,JK; Lee,ML; Chi,GC; Chang,SJ
2003	Experimental study of perpendicular transport in weakly coupled AlxGa1-xN/GaN superlattices	Waldron,EL; Li,YL; Schubert,EF; Graff,JW; Sheu,JK
2003	Fabrication of optical transmission elements in an SiNx membrane	Lee,CC; Chang,YC; Chang,JY; Chiu,CF; Chi,GC
2003	High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact	Chang,CS; Chang,SJ; Su,YK; Kuo,CH; Lai,WC; Lin,YC; Hsu,YP; Shei,SC; Tsai,JM; Lo,HM; Ke,JC; Shen,JK
2003	Image-plane disk-type multiplex hologram	Cheng,YS; Chen,CH
2003	In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer	Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Hsu,YP; Kuo,CH; Lai,WC; Wen,TC; Tsai,JM; Sheu,JK
2003	InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer	Wu,LW; Chang,SJ; Su,YK; Tsai,TY; Wen,TC; Kuo,CH; Lai,WC; Sheu,JK; Tsai,JM; Chen,SC; Huang,BR
2003	InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping	Wen,TC; Chang,SJ; Su,YK; Wu,LW; Kuo,CH; Lai,WC; Sheu,JK; Tsai,TY
2003	Nitride-based blue LEDs with GaN/SiN double buffer layers	Kuo,CH; Chang,SJ; Su,YK; Wang,CK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Lin,CC
2003	Nitride-based green light-emitting diodes with high temperature GaN barrier layers	Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Wen,TC; Kuo,CH; Lai,WC; Chang,CS; Tsai,JM; Sheu,JK
2003	Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer	Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Chen,JF; Shen,JK; Tsai,JM
2003	Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers	Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Chen,SC
2003	n-UV plus blue/green/red white light emitting diode lamps	Kuo,CH; Sheu,JK; Chang,SJ; Su,YK; Wu,LW; Tsai,JM; Liu,CH; Wu,RK
2003	Photorefractive properties of two series of BaTiO3 crystals annealed in temperatures of 900 degrees C and 1000 degrees C	Chang,JY; Huang,CY; Yueh,RR; Pan,HW; Lin,CH; Sun,CC
2003	Properties of Cu/Au Schottky contacts on InGaP layer	Liu,DS; Lee,CT; Wang,CW
2003	Si and Zn co-doped InGaN-GaN white light-emitting diodes	Chang,SJ; Wu,LW; Su,YK; Kuo,CH; Lai,WC; Hsu,YP; Sheu,JK; Chen,SF; Tsai,JM
2003	White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors	Sheu,JK; Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Lin,YC; Lai,WC; Tsai,JM; Chi,GC; Wu,RK
2004	Enhanced radiative efficiency in blue (In,Ga)N multiple-quantum-well light-emitting diodes with an electron reservoir layer	Takahashi,Y; Satake,A; Fujiwara,K; Shue,JK; Jahn,U; Kostial,H; Grahn,HT
2004	Method for producing coded micro-carrier and test method by using a novel type biochip	Chang,RS; Lee,DY; Chen,WY; Huang,RN; Huang,HY; Hsu,JH; Lin,PL
2004	Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact	Chang,SJ; Chang,CS; Su,YK; Chuang,RW; Lai,WC; Kuo,CH; Hsu,YP; Lin,YC; Shei,SC; Lo,HM; Ke,JC; Sheu,JK

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