"Chyi,JI"的相關文件
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類別 |
日期 |
題名 |
作者 |
檔案 |
| [電機工程研究所] 期刊論文 |
2004 |
1.3 mu m InAs/GaAs quantum dots directly capped with GaAs grown by metal-organic chemical vapor deposition |
Huang,KF; Hsieh,TP; Yeh,NT; Ho,WJ; Chyi,JI; Wu,MC |
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| [電機工程研究所] 期刊論文 |
2005 |
1.55 mu m emission from InAs quantum dots grown on GaAs |
Hsieh,TP; Chiu,PC; Chyi,JI; Yeh,NT; Ho,WJ; Chang,WH; Hsu,TM |
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| [電機工程研究所] 期刊論文 |
2002 |
1.6 A GaN Schottky rectifiers on bulk GaN substrates |
Johnson,JW; Lou,B; Ren,F; Palmer,D; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2004 |
2.6 A, 0.69 MW cm(-2) single-chip bulk GaN p-i-n rectifier |
Irokawa,Y; Luo,B; Kang,BS; Kim,J; LaRoche,JR; Ren,F; Baik,KH; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ |
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| [電機工程研究所] 期刊論文 |
2001 |
A carrier escape study from InAs self-assembled quantum dots by photocurrent measurement |
Chang,WH; Hsu,TM; Huang,CC; Hsu,SL; Lai,CY; Yeh,NT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
A comparative study of the passivation films on AlGaAs/GaAs heterojunction diodes and bipolar transistors |
Hwang,HP; Cheng,YS; Shieh,JL; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2003 |
Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes |
Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
Activation of p-type GaN with irradiation of the second harmonics of a Q-switched Nd : YAG laser |
Cheng,YC; Liao,CC; Feng,SW; Yang,CC; Lin,YS; Ma,KJ; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2004 |
AlGaN/GaN HEMT based liquid sensors |
Mehandru,R; Luo,B; Kang,BS; Kim,J; Ren,F; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2002 |
AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy |
Kikuchi,A; Bannai,R; Kishino,K; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2005 |
A two-stack, multi-color In0.5Ga0.5As/GaAs and InAs/GaAs quantum dot infrared photodetector for long wavelength infrared detection |
Jiang,L; Li,SS; Liu,WS; Yeh,NT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
1994 |
BAND OFFSETS OF IN0.30GA0.70AS/IN0.29AL0.71AS HETEROJUNCTION GROWN ON GAAS SUBSTRATE |
SHIEH,JL; CHYI,JI; LIN,RJ; LIN,RM; PAN,JW |
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| [電機工程研究所] 期刊論文 |
2003 |
Boundary effects on the optical properties of InGaN multiple quantum wells |
Peng,LH; Lai,CM; Shih,CW; Chuo,CC; Chyi,JI |
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| [化學工程與材料工程研究所] 期刊論文 |
2002 |
Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers |
Johnson,JW; Zhang,AP; Luo,WB; Ren,F; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI |
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| [電機工程學系] 期刊論文 |
2010 |
Carrier dynamics in isoelectronic ZnSe(1-x)O(x) semiconductors |
Lin,YC; Chung,HL; Chou,WC; Chen,WK; Chang,WH; Chen,CY; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2002 |
Carrier transfer effects and thermal activation behaviors in the photoluminescence of In(Ga)As self-assembled quantum dots |
Chang,WH; Hsu,TM; Yeh,NT; Chyi,JI |
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| [電機工程學系] 期刊論文 |
2010 |
Challenges and Opportunities in GaN and ZnO Devices and Materials |
Morkoc,H; Chyi,JI; Krost,A; Nanishi,Y; Silversmith,DJ |
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| [電機工程研究所] 期刊論文 |
1997 |
Characteristics of a In-0.52(AlxGa1-x)(0.48)As/In0.53Ga0.47As(0<=x<=1) heterojunction and its application on HEMT's |
Chan,YJ; Wu,CS; Chen,CH; Shieh,JL; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
1994 |
CHARACTERISTICS OF IN0.3GA0.7AS/IN0.29AL0.71AS HETEROSTRUCTURES GROWN ON GAAS USING INALAS BUFFERS |
CHYI,JI; SHIEH,JL; WU,CS; LIN,RM; PAN,JW; CHAN,YJ; LIN,CH |
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| [電機工程研究所] 期刊論文 |
1996 |
Characteristics of multistack multiquantum barrier and its application to graded-index separate confinement heterostructure lasers |
Chyi,JI; Wang,SK; Gau,JH; Shieh,JL; Pan,JW |
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| [電機工程研究所] 期刊論文 |
1994 |
CHARACTERISTICS OF PSEUDOMORPHIC ALGAAS INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS |
YANG,MT; CHAN,YJ; CHEN,CH; CHYI,JI; LIN,RM; SHIEH,JL |
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| [電機工程學系] 期刊論文 |
2010 |
Characterization and Comparison of GaAs/AlGaAs Uni-Traveling Carrier and Separated-Transport-Recombination Photodiode Based High-Power Sub-THz Photonic Transmitters |
Li,YT; Shi,JW; Huang,CY; Chen,NW; Chen,SH; Chyi,JI; Wang,YC; Yang,CS; Pan,CL |
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| [物理研究所] 期刊論文 |
1996 |
Characterization of low temperature GaAs grown by molecular beam epitaxy |
Lee,WC; Hsu,TM; Chyi,JI; Lee,GS; Li,WH; Lee,KC |
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| [電機工程研究所] 期刊論文 |
2001 |
Charging of embedded InAs self-assembled quantum dots by space-charge techniques |
Chang,WH; Chen,WY; Cheng,MC; Lai,CY; Hsu,TM; Yeh,NT; Chyi,JI |
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| [物理學系] 期刊論文 |
2010 |
Coherence properties of InAs quantum dot emissions from quasi-L2 photonic crystal nanocavities |
Chen,WY; Yang,FS; Chang,HS; Cheng,CC; Wang,CJ; Chiu,PC; Chyi,JI; Hsu,TM |
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| [電機工程研究所] 期刊論文 |
2001 |
Comparison of GaN p-i-n and Schottky rectifier performance |
Zhang,APP; Dang,GT; Ren,F; Cho,H; Lee,KP; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
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| [電機工程研究所] 期刊論文 |
2003 |
Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Overberg,ME; Frazier,R; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2003 |
Current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers |
Irokawa,Y; Luo,B; Kim,J; LaRoche,JR; Ren,F; Baik,KH; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ |
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| [電機工程研究所] 期刊論文 |
1996 |
DC and microwave characteristics of In-0.3(AlxGa1-x)(0.7)As/In0.3Ga0.7As heterojunction bipolar transistors grown on GaAs |
Hwang,HP; Shieh,JL; Pan,JW; Chou,CC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2004 |
DC characteristics of AlGaN/GaN heterostructure field-effect transistors on freestanding GaN substrates |
Irokawa,Y; Luo,B; Ren,F; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ; Pearton,SJ |
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| [電機工程學系] 期刊論文 |
2010 |
DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors |
Chen,SH; Chang,CM; Chiang,PY; Wang,SY; Chang,WH; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
1997 |
Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates |
Shieh,JL; Chang,MN; Cheng,YS; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
1997 |
Defect study on the strain-relaxed InxAl1-xAs epilayers (x<0.4) grown on GaAs |
Shieh,JL; Chang,MN; Cheng,YS; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2005 |
Demonstration of a dual-depletion-region electroabsorption modulator at 1.55-mu m wavelength for high-speed and low-driving-voltage performance |
Shi,JW; Hsieh,CA; Shiao,AC; Wu,YS; Huang,RH; Chen,SH; Tsai,YT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2000 |
Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells |
Lin,YS; Ma,KJ; Hsu,C; Feng,SW; Cheng,YC; Liao,CC; Yang,CC; Chou,CC; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
Device characteristics of the GaN/InGaN-doped channel HFETs |
Hsin,YM; Hsu,HT; Chuo,CC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2004 |
Device saturation behavior of submillimeter-wave membrane photonic transmitters |
Tien,MC; Chang,HH; Lu,JY; Chen,LJ; Chen,SY; Wu,RB; Liu,WS; Chyi,JI; Sun,CK |
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| [電機工程研究所] 期刊論文 |
2003 |
Diffusion mechanism and photoluminescence of erbium in GaN |
Ting,YS; Chen,CC; Lee,CC; Chi,GC; Chini,TK; Chakraborty,P; Chuang,HW; Tsang,JS; Kuo,CT; Tsai,WC; Chen,SH; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2002 |
Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy |
Lai,CY; Hsu,TM; Chang,WH; Tseng,KU; Lee,CM; Chuo,CC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
1995 |
DOUBLE-HETEROJUNCTION PSEUDOMORPHIC ALGAAS/IN0.15GA0.85 AS HEMT AND ITS SHORT-CHANNEL EFFECTS |
WU,CS; CHAN,YJ; CHEN,CD; CHUANG,TM; JUANG,FY; CHANG,CC; CHYI,JI |
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| [電機工程學系] 期刊論文 |
2010 |
E-beam-evaporated Al(2)O(3) for InAs/AlSb metal-oxide-semiconductor HEMT development |
Lin,HK; Fan,DW; Lin,YC; Chiu,PC; Chien,CY; Li,PW; Chyi,JI; Ko,CH; Kuan,TM; Hsieh,MK; Lee,WC; Wann,CH |
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| [電機工程研究所] 期刊論文 |
2002 |
Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing |
Chuo,CC; Chang,MN; Pan,FM; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2003 |
Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors |
Kang,BS; Kim,S; Kim,J; Ren,F; Baik,K; Pearton,SJ; Gila,BP; Abernathy,CR; Pan,CC; Chen,GT; Chyi,JI; Chandrasekaran,V; Sheplak,M; Nishida,T; Chu,SNG |
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| [電機工程研究所] 期刊論文 |
2001 |
Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures |
Chen,CC; Hsieh,KL; Chi,GC; Chuo,CC; Chyi,JI; Chang,CA |
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| [電機工程研究所] 期刊論文 |
2001 |
Effects of electric field and coulomb interaction on the interband transitions of InAs self-assembled quantum dots: A study by modulation reflectance spectroscopy |
Chang,WH; Hsu,TM; Huang,CC; Yeh,NT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
1996 |
Effects of finger width on large-area InGaAs MSM photodetectors |
Yuang,RH; Chyi,JI |
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| [電機工程學系] 期刊論文 |
2011 |
Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots |
Hsu,WT; Liao,YA; Hsu,FC; Chiu,PC; Chyi,JI; Chang,WH |
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| [電機工程學系] 期刊論文 |
2010 |
Effects of Lens Shape on GaN Grown on Microlens Patterned Sapphire Substrates by Metallorganic Chemical Vapor Deposition |
Lin,HC; Liu,HH; Lee,GY; Chyi,JI; Lu,CM; Chao,CW; Wang,TC; Chang,CJ; Chi,SWS |
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| [電機工程研究所] 期刊論文 |
1999 |
Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides |
Chang,MN; Hsieh,KC; Nee,TE; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2000 |
Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells |
Chuo,CC; Lee,CM; Nee,TE; Chyi,JI |
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| [電機工程學系] 期刊論文 |
2011 |
Efficiency Enhancement of InGaN LEDs With an n-Type AlGaN/GaN/InGaN Current Spreading Layer |
Liu,HH; Chen,PR; Lee,GY; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2005 |
Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection |
Chen,WM; Buyanova,IA; Nishibayashi,K; Kayanuma,K; Seo,K; Murayama,A; Oka,Y; Thaler,G; Frazier,R; Abernathy,CR; Ren,F; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2003 |
Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Overberg,ME; Thaler,GT; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2004 |
Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Frazier,RM; Gila,BP; Abernathy,CR; Pearton,SJ; Buyanova,IA; Rudko,GY; Chen,WM; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2000 |
Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer |
Yang,CC; Wu,MC; Chuo,CC; Chyi,JI; Lin,CF; Chi,GC |
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| [光電科學與工程學系] 期刊論文 |
2001 |
Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chou,CC; Lee,CM |
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| [電機工程研究所] 期刊論文 |
2000 |
Electron distribution and level occupation in an ensemble of InxGa1-xAs/GaAs self-assembled quantum dots |
Chang,WH; Hsu,TM; Yeh,NT; Chyi,JI |
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| [物理研究所] 期刊論文 |
1999 |
Electron-filling modulation reflectance in charged self-assembled InxGa1-xAs quantum dots |
Hsu,TM; Chang,WH; Tsai,KF; Chyi,JI; Yeh,NT; Nee,TE |
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| [電機工程研究所] 期刊論文 |
2005 |
Electroreflectance studies of InAs quantum dots with InxGa1-xAs capping layer grown by metalorganic chemical vapor deposition |
Chang,WH; Chen,HY; Chang,HS; Chen,WY; Hsu,TM; Hsieh,TP; Chyi,JI; Yeh,NT |
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| [電機工程研究所] 期刊論文 |
2004 |
Electroreflectance study on the polarization field in InGalInGaN multiple quantum wells |
Hsu,TM; Lai,CY; Chang,WH; Pan,CC; Chuo,CC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
1999 |
Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n(+) structure |
Hwang,JS; Hwang,WC; Yang,ZP; Chang,GS; Chyi,JI; Yeh,NT |
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| [電機工程研究所] 期刊論文 |
1996 |
Enhanced carrier and optical confinement of quantum well lasers with graded multi-quantum barriers |
Chyi,JI; Gau,JH; Wang,SK; Shieh,JL; Pan,JW |
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| [電機工程研究所] 期刊論文 |
1996 |
Enhanced device performance by unstrained In0.3Ga0.7As/In0.29Al0.71As doped-channel FET on GaAs substrates |
Yang,MT; Chan,YJ; Shieh,JL; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2005 |
Enhanced light emission from InAs quantum dots in single-defect photonic crystal microcavities at room temperature |
Chen,WY; Chang,WH; Chang,HS; Hsu,TM; Lee,CC; Chen,CC; Luan,PG; Chang,JY; Hsieh,TP; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2003 |
Er diffusion into gallium nitride |
Chen,CC; Ting,YS; Lee,CC; Chi,GC; Chakraborty,P; Chini,T; Chuang,HW; Tsang,JS; Kuo,CT; Tsai,WC; Chen,SH; Chyi,JI |
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| [物理研究所] 期刊論文 |
1999 |
Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots |
Chang,WH; Hsu,TM; Tsai,KF; Nee,TE; Chyi,JI; Yeh,NT |
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| [電機工程學系] 期刊論文 |
2010 |
Extremely High Saturation Current-Bandwidth Product Performance of a Near-Ballistic Uni-Traveling-Carrier Photodiode With a Flip-Chip Bonding Structure |
Shi,JW; Kuo,FM; Wu,CJ; Chang,CL; Liu,CY; Chen,CY; Chyi,JI |
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| [電機工程學系] 期刊論文 |
2011 |
Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors |
Lo,CF; Ren,F; Chang,CY; Pearton,SJ; Chen,SH; Chang,CM; Wang,SY; Chyi,JI; Kravchenko,II |
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| [電機工程學系] 期刊論文 |
2010 |
Fabrication study of AlN solar-blind (< 280 nm) MSM photodetectors grown by low-temperature deposition |
Chen,MR; Chang,SH; Chen,TC; Hsu,CH; Kao,HL; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2000 |
Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers |
Zhang,AP; Dang,G; Ren,F; Han,J; Cho,H; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Chu,SNG |
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| [電機工程研究所] 期刊論文 |
2006 |
Frequency tunability of terahertz photonic transmitters |
Kao,TF; Chang,HH; Chen,LJ; Lu,JY; Liu,AS; Yu,YC; Wu,RB; Liu,WS; Chyi,JI; Sun,CK |
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| [電機工程研究所] 期刊論文 |
1996 |
GaAs-based In0.29Al0.71As/In0.3Ga0.7 as high-electron mobility transistors |
Chan,YJ; Wu,CS; Chyi,JI; Shieh,JL |
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| [電機工程研究所] 期刊論文 |
1997 |
GaAs metal-semiconductor-metal photodetectors with recessed cathodes and/or anodes |
Yuang,RH; Shieh,JL; Chyi,JI; Chen,JS |
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| [電機工程研究所] 期刊論文 |
2004 |
GalGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates |
LaRoche,JR; Luo,B; Ren,F; Baik,KH; Stodilka,D; Gila,B; Abernathy,CR; Pearton,SJ; Usikov,A; Tsvetkov,D; Soukhoveev,V; Gainer,G; Rechnikov,A; Dimitriev,V; Chen,GT; Pan,CC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
GaN electronics for high power, high temperature applications |
Pearton,SJ; Ren,F; Zhang,AP; Dang,G; Cao,XA; Lee,KP; Cho,H; Gila,BP; Johnson,JW; Monier,C; Abernathy,CR; Han,J; Baca,AG; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chu,SNG |
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| [電機工程學系] 期刊論文 |
2010 |
Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors |
Lin,HK; Lin,YC; Huang,FH; Fan,TW; Chiu,PC; Chyi,JI; Ko,CH; Kuan,TM; Hsieh,MK; Lee,WC; Wann,CH |
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| [電機工程研究所] 期刊論文 |
2000 |
Gd2O3/GaN metal-oxide-semiconductor field-effect transistor |
Johnson,JW; Luo,B; Ren,F; Gila,BP; Krishnamoorthy,W; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
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| [光電科學研究中心] 期刊論文 |
2005 |
Generation of frequency-tunable nanoacoustic waves by optical coherent control |
Yu,CT; Lin,KH; Hsieh,CL; Pan,CC; Chyi,JI; Sun,CK |
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| [電機工程研究所] 期刊論文 |
1999 |
Growth and device performance of GaN Schottky rectifiers |
Chyi,JI; Lee,CM; Chuo,CC; Chi,GC; Dang,GT; Zhang,AP; Ren,F; Cao,XA; Pearton,SJ; Chu,SNG; Wilson,RG |
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| [電機工程研究所] 期刊論文 |
2006 |
Growth of low density InGaAs quantum dots for single photon sources by metal-organic chemical vapour deposition |
Hsieh,TP; Chang,HS; Chen,WY; Chang,WH; Hsu,TM; Yeh,NT; Ho,WJ; Chiu,PC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2003 |
High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer |
Lee,CM; Chuo,CC; Chen,IL; Chang,JC; Chyi,JI |
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| [電機工程學系] 期刊論文 |
2011 |
High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers |
Liu,WS; Wu,HM; Liao,YA; Chyi,JI; Chen,WY; Hsu,TM |
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| [電機工程學系] 期刊論文 |
2011 |
High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer |
Lee,GY; Liu,HH; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
1995 |
HIGH-PERFORMANCE LARGE-AREA INGAAS MSM PHOTODETECTORS WITH A PSEUDOMORPHIC INGAP CAP LAYER |
YUANG,RH; SHIEH,HC; CHIEN,YJ; CHAN,YJ; CHYI,JI; LIN,W; TU,YK |
|
| [電機工程研究所] 期刊論文 |
2004 |
High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes |
Chen,GT; Pan,CC; Fang,CS; Huang,TC; Chyi,JI; Chang,MN; Huang,SB; Hsu,JT |
|
| [電機工程研究所] 期刊論文 |
1996 |
High-responsivity InGaAs metal-semiconductor-metal photodetectors with semi-transparent Schottky contacts |
Yuang,RH; Chyi,JI; Chan,YJ; Lin,W; Tu,YK |
|
| [電機工程研究所] 期刊論文 |
1995 |
HIGH-RESPONSIVITY INGAAS MSM PHOTODETECTORS WITH SEMITRANSPARENT SCHOTTKY CONTACTS |
YUANG,RH; CHYI,JI; CHAN,YJ; LIN,W; TU,YK |
|
| [電機工程研究所] 期刊論文 |
1996 |
High-speed GaAs metal-semiconductor-metal photodetectors with recessed metal electrodes |
Yuang,RH; Chien,YJ; Shieh,JL; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
1996 |
High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield |
Yuang,RH; Chyi,JI; Lin,W; Tu,YK |
|
| [電機工程研究所] 期刊論文 |
1997 |
High thermal conductive passivation films on AlGaAs/GaAs heterojunction diodes and bipolar transistors |
Hwang,HP; Cheng,YS; Shieh,JL; Pan,JW; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
1994 |
HIGH UNIFORMITY OF AL0.3GA0.7AS/IN0.15GA0.85AS DOPED-CHANNEL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON 3'' GAAS SUBSTRATES |
CHAN,YJ; YANG,MT; YEH,TJ; CHYI,JI |
|
| [電機工程研究所] 期刊論文 |
2000 |
High voltage GaN Schottky rectifiers |
Dang,GT; Zhang,AP; Ren,F; Cao,XNA; Pearton,SJ; Cho,H; Han,J; Chyi,JI; Lee,CM; Chuo,CC; Chu,SNG; Wilson,RG |
|
| [電機工程研究所] 期刊論文 |
2002 |
Hole emission processes in InAs/GaAs self-assembled quantum dots |
Chang,WH; Chen,WY; Hsu,TM; Yeh,NT; Chyi,JI |
|
| [物理學系] 期刊論文 |
2011 |
Imaging resonant modes in photonic crystal nanocavity by atomic force microscope nano-oxidation |
Chen,WY; Chen,MJ; Cheng,CC; Hsu,TM; Wang,CJ; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2002 |
Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures |
Feng,SW; Cheng,YC; Chung,YY; Yang,CC; Lin,YS; Hsu,C; Ma,KJ; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2001 |
Improved electroluminescence of InAs quantum dots with strain reducing layer |
Yeh,NT; Nee,TE; Chyi,JI; Chia,CT; Hsu,TM; Huang,CC |
|
| [電機工程研究所] 期刊論文 |
1999 |
Improved temperature characteristics of 1.55 mu m InAlGaAs quantum well lasers with multiquantum barrier at p-cladding layer |
Chyi,JI; Chen,MH; Pan,JW; Shih,TT |
|
| [電機工程研究所] 期刊論文 |
2001 |
Improvement of diodes performance with a multiple-pair buffer layer by MOCVD |
Yang,CC; Wu,MC; Chi,GC; Chuo,CC; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2005 |
Improvement of mesa-sidewall leakage current using benzocyclobuten sidewall process in InGaAs/InP MSM photodetector |
Chiu,WY; Huang,FH; Wu,YS; Lin,DM; Chan,YJ; Chen,SH; Chyi,JI; Shi,JW |
|
| [電機工程研究所] 期刊論文 |
1995 |
IN-0.52(AL0.9GA0.1)(0.48)AS/IN0.53GA0.47AS HEMT WITH IMPROVED DEVICE RELIABILITY |
WU,CS; CHAN,YJ; SHIEN,JL; CHYI,JI |
|
| [電機工程研究所] 期刊論文 |
2003 |
In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K |
Jiang,L; Li,SS; Yeh,NT; Chyi,JI; Ross,CE; Jones,KS |
|
| [電機工程研究所] 期刊論文 |
2002 |
InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy |
Yeh,NT; Liu,WS; Chen,SH; Chiu,PC; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2005 |
InGaAsN/GaAs quantum-well lasers using two-step and nitride passivation growth |
Chiu,PC; Yeh,NT; Hong,CC; Hsieh,TP; Tsai,YT; Ho,WJ; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2004 |
InGaN-GaN MQW LEDs with current blocking layer formed by selective activation. |
Lee,CM; Chuo,CC; Liu,YC; Chen,IL; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2001 |
Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells |
Chuo,CC; Lee,CM; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2002 |
Investigation of InAs/GaAs quantum-dot infrared photodetector with In0.5Ga0.5P dark current blocking layer |
Jiang,L; Li,SS; Yeh,NT; Chyi,JI; Tidrow,MZ |
|
| [電機工程研究所] 期刊論文 |
2005 |
Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire |
Lin,HF; Wu,CT; Chien,WC; Chen,SW; Kao,HL; Chyi,JI; Chen,JS |
|
| [電機工程研究所] 期刊論文 |
2001 |
Laser-induced activation of p-type GaN with the second harmonics of a Nd : YAG laser |
Cheng,YC; Liao,CC; Feng,SW; Yang,CC; Lin,YS; Ma,KJ; Chou,CC; Lee,CM; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2004 |
Lateral Schottky GaN rectifiers formed by Si+ ion implantation |
Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2003 |
Liquid phase deposited SiO2 on GaN |
Wu,HR; Lee,KW; Nian,TB; Chou,DW; Wu,JJH; Wang,YH; Houng,MP; Sze,PW; Su,YK; Chang,SJ; Ho,CH; Chiang,CI; Chern,YT; Juang,FS; Wen,TC; Lee,WI; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2002 |
Localized and quantum-well state excitons in AlInGaN laser-diode structure |
Chuo,CC; Chen,GT; Lin,MI; Lee,CM; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2004 |
Low damage, Cl-2-based gate recess etching for 0.3-mu m gate-length AlGaN/GaN HEMT fabrication |
Wang,WK; Li,YJ; Lin,CK; Chan,YJ; Chen,GT; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
1994 |
LOW DARK CURRENT AND HIGH LINEARITY INGAAS MSM PHOTODETECTORS |
CHYI,JI; WEI,TS; HONG,JW; LIN,W; TU,YK |
|
| [電機工程研究所] 期刊論文 |
2004 |
Low-k BCB passivation on AlGaN-GaN HEMT fabrication |
Wang,WK; Lin,CH; Lin,PC; Lin,CK; Huang,FH; Chan,YJ; Chen,GT; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2005 |
Low resistance WSix-based ohmic contacts on n-type GaN |
Pan,CC; Chen,MS; Lee,CM; Chyi,JI |
|
| [電機工程學系] 期刊論文 |
2010 |
Low Surface Recombination in InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors |
Wang,SY; Chiang,PY; Chang,CM; Chen,SH; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
1995 |
LOW-THRESHOLD INALGAAS/ALGAAS STRAINED-QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY |
CHYI,JI; GAU,JH; SHIEH,JL; PAN,JW; CHAN,YJ; HONG,JW; HUANG,MF |
|
| [電機工程研究所] 期刊論文 |
2004 |
Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes |
Pan,CC; Lee,CM; Liu,JW; Chen,GT; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
1996 |
Material properties of compositional graded InxGa1-xAs and InxAl1-xAs epilayers grown on GaAs substrates |
Chyi,JI; Shieh,JL; Pan,JW; Lin,RM |
|
| [電機工程研究所] 期刊論文 |
2000 |
Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures |
Yeh,NT; Nee,TE; Chyi,JI; Hsu,TM; Huang,CC |
|
| [電機工程研究所] 期刊論文 |
2000 |
MBE growth and characterisation of InGaAs quantum dot lasers |
Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2003 |
Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures |
Cheng,YC; Tseng,CH; Hsu,C; Ma,KJ; Feng,SW; Lin,EC; Yang,CC; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2004 |
MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors |
Irokawa,Y; Nakano,Y; Ishiko,M; Kachi,T; Kim,J; Ren,F; Gila,BP; Onstine,AH; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
1994 |
MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXAL1-XAS ON GAAS |
CHYI,JI; SHIEH,JL; LIN,RM; NEE,TE; PAN,JW |
|
| [電機工程研究所] 期刊論文 |
2002 |
Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures |
Feng,SW; Cheng,YC; Chung,YY; Yang,CC; Mao,MH; Lin,YS; Ma,KJ; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2004 |
Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions |
Cheng,YC; Lin,EC; Wu,CM; Yang,CC; Yang,JR; Rosenauer,A; Ma,KJ; Shi,SC; Chen,LC; Pan,CC; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2004 |
On the origin of spin loss in GaMnN/InGaN light-emitting diodes |
Buyanova,IA; Izadifard,M; Chen,WM; Kim,J; Ren,F; Thaler,G; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM |
|
| [電機工程研究所] 期刊論文 |
2004 |
Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes |
Buyanova,IA; Izadifard,M; Storasta,L; Chen,WM; Kim,J; Ren,F; Thaler,G; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM |
|
| [電機工程學系] 期刊論文 |
2011 |
Optical characterization of isoelectronic ZnSe(1-x)O(x) semiconductors |
Lin,YC; Chung,HL; Ku,JT; Chen,CY; Chien,KF; Fan,WC; Lee,L; Chyi,JI; Chou,WC; Chang,WH; Chen,WK |
|
| [電機工程研究所] 期刊論文 |
2005 |
Optical control of the exciton charge states of single quantum dots via impurity levels |
Chang,WH; Chang,HS; Chen,WY; Hsu,TM; Hsieh,TP; Chyi,JI; Yeh,NT |
|
| [電機工程研究所] 期刊論文 |
2005 |
Optical emission from individual InGaAs quantum dots in single-defect photonic crystal nanocavity |
Chang,WH; Chen,WY; Chang,HS; Hsu,TM; Hsieh,TP; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2005 |
Optical piezoelectric transducer for nano-ultrasonics |
Lin,KH; Chern,GW; Yu,CT; Liu,TM; Pan,CC; Chen,GT; Chyi,JI; Huang,SW; Li,PC; Sun,CK |
|
| [電機工程研究所] 期刊論文 |
2005 |
Optical properties of InAs quantum dots with InAlAs/InGaAs composite matrix |
Liu,WS; Chyi,JI |
|
| [電機工程學系] 期刊論文 |
2011 |
Optical properties of InGaN/GaN multiple quantum wells with trimethylindium treatment during growth interruption |
Feng,SW; Tsai,CY; Wang,HC; Lin,HC; Chyi,JI |
|
| [物理研究所] 期刊論文 |
2009 |
Origins of nonzero multiple photon emission probability from single quantum dots embedded in photonic crystal nanocavities |
Chang,HS; Chen,WY; Hsu,TM; Hsieh,TP; Chyi,JI; Chang,WH |
|
| [電機工程研究所] 期刊論文 |
1997 |
Overall performance improvement in GaAs MSM photodetectors by using recessed-cathode structure |
Yuang,RH; Shieh,JL; Chyi,JI; Chen,JS |
|
| [電機工程研究所] 期刊論文 |
2005 |
Performance enhancement by using the n(+)-GaN cap layer and gate recess technology on the AlGaN/GaN HEMTs fabrication. |
Wang,WK; Lin,PC; Lin,CH; Lin,CK; Chan,YJ; Chen,GT; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2005 |
Performance enhancement by using the n(+)-GaN cap layer and gate recess technology on the AlGaN-GaNHEMT fabrication |
Wang,WK; Lin,PC; Lin,CH; Lin,CK; Chan,YJ; Chen,GT; Chyi,JI |
|
| [光電科學研究中心] 期刊論文 |
1995 |
PERFORMANCE ENHANCEMENT USING WSIX/ITO ELECTRODES IN INGAAS/INALAS MSM PHOTODETECTORS |
CHU,CC; CHAN,YJ; YUANG,RH; CHYI,JI; LEE,CT |
|
| [電機工程研究所] 期刊論文 |
2002 |
Phonon-replica transitions in InGaN/GaN quantum well structures |
Feng,SW; Tsai,CY; Cheng,YC; Liao,CC; Yang,CC; Lin,YS; Ma,KJ; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2000 |
Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots |
Chang,WH; Hsu,TM; Huang,CC; Hsu,SL; Lai,CY; Yeh,NT; Nee,TE; Chyi,JI |
|
| [物理學系] 期刊論文 |
2010 |
Photoluminescence of self-assembled InAs quantum dots embedded in photonic crystal nanocavities with shifted air holes |
Chen,WY; Chang,HS; Lin,CH; Chiu,PC; Wang,CJ; Tseng,YC; Chyi,JI; Hsu,TM |
|
| [電機工程研究所] 期刊論文 |
2001 |
Piezoelectric field-induced quantum-confined Stark effect in InGaN/GaN multiple quantum wells |
Lai,CY; Hsu,TM; Chang,WH; Tseng,KU; Lee,CM; Chuo,CC; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2005 |
Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors |
Chu,SNG; Ren,F; Pearton,SJ; Kang,BS; Kim,S; Gila,BP; Abernathy,CR; Chyi,JI; Johnson,WJ; Lin,J |
|
| [電機工程研究所] 期刊論文 |
2006 |
Pinholelike defects in multistack 1.3 mu m InAs quantum dot laser |
Liu,WS; Chang,HL; Liu,YS; Chyi,JI |
|
| [化學工程與材料工程研究所] 期刊論文 |
1997 |
Porous silicon light-emitting diode with tunable color |
Chen,YA; Chen,BF; Tsay,WC; Laih,LH; Chang,MN; Chyi,JI; Hong,JW; Chang,CY |
|
| [電機工程研究所] 期刊論文 |
2000 |
Processing and device performance of GaN power rectifiers |
Zhang,AP; Dang,GT; Cao,XA; Cho,H; Ren,F; Han,J; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chi,GC; Chu,SNG; Wilson,RG; Pearton,SJ |
|
| [電機工程研究所] 期刊論文 |
2000 |
Properties and effects of hydrogen in GaN |
Pearton,SJ; Cho,H; Ren,F; Chyi,JI; Han,J; Wilson,RG |
|
| [電機工程研究所] 期刊論文 |
2000 |
Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes |
Hong,M; Anselm,KA; Kwo,J; Ng,HM; Baillargeon,JN; Kortan,AR; Mannaerts,JP; Cho,AY; Lee,CM; Chyi,JI; Lay,TS |
|
| [電機工程研究所] 期刊論文 |
2001 |
Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots |
Hsu,TM; Chang,WH; Huang,CC; Yeh,NT; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2003 |
Reactive ion etching of GaN/InGaN using BCl3 plasma |
Hong,HF; Chao,CK; Chyi,JI; Tzeng,YC |
|
| [環境工程研究所 ] 期刊論文 |
1997 |
Reduced impact ionization by using In-0.53(AlxGa1-x)(0.47)As (x=0.1,0.2) channel in InP HEMTs |
Lai,LS; Chan,YJ; Pan,JW; Sheih,JL; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
1996 |
Reduction of hole transit time in GaAs MSM photodetectors by p-type delta-doping |
Chyi,JI; Chien,YJ; Yuang,RH; Shieh,JL; Pan,JW; Chen,JS |
|
| [電機工程研究所] 期刊論文 |
2004 |
Reduction of surface-induced current collapse in AlGaN/GaN HFETs on freestanding GaN substrates |
Irokawa,Y; Luo,B; Ren,F; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ |
|
| [光電科學研究中心] 期刊論文 |
2004 |
Reflection property of nano-acoustic wave at the air/GaN interface |
Hsieh,CL; Lin,KH; Wu,SB; Pan,CC; Chyi,JI; Sun,CK |
|
| [電機工程研究所] 期刊論文 |
2003 |
Response to "Comment on 'AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy' " [Appl. Phys. Lett. 83, 3626 (2003)] |
Kikuchi,A; Bannai,R; Kishino,K; Lee,CM; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
1999 |
Role of excess As in low-temperature grown GaAs subjected to BCl3 reactive ion etching |
Chang,MN; Chuo,CC; Lu,CM; Hsieh,KC; Yeh,NT; Chyi,JI |
|
| [電機工程學系] 期刊論文 |
2011 |
Roles of Dislocation Density to the Scattering of Nano-acoustic Waves in GaN |
Liu,TM; Sun,SZ; Chang,CF; Chen,GT; Pan,CC; Chyi,JI; Sun,CK |
|
| [電機工程學系] 期刊論文 |
2010 |
Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode |
Lin,SY; Tseng,CC; Lin,WH; Mai,SC; Wu,SY; Chen,SH; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2002 |
Scanning electron filling modulation reflectance of charged InGaAs self-assembled quantum dot |
Hsu,TM; Chang,WH; Lai,CY; Yeh,NT; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
1995 |
SCHOTTKY-BARRIER HEIGHTS OF INXAL1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.35) EPILAYERS ON GAAS |
CHYI,JI; SHIEH,JL; LIN,RJ; PAN,JW; LIN,RM |
|
| [電機工程研究所] 期刊論文 |
2001 |
Schottky rectifiers fabricated on free-standing GaN substrates |
Johnson,JW; LaRoch,JR; Ren,F; Gila,BP; Overberg,ME; Abernathy,CR; Chyi,JI; Chou,CC; Nee,TE; Lee,CM; Lee,KP; Park,SS; Park,YJ; Pearton,SJ |
|
| [電機工程研究所] 期刊論文 |
2005 |
Selective growth of InAs quantum dots on patterned GaAs |
Hsieh,TP; Chiu,PC; Liu,YC; Yeh,NT; Ho,WJ; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2000 |
Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region |
Yeh,NT; Lee,JM; Nee,TE; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2005 |
Separated-transport-recombination p-i-n photodiode for high-speed and high-power performance |
Shi,JW; Hsu,HC; Huang,FH; Liu,WS; Chyi,JI; Lu,JY; Sun,CK; Pan,CL |
|
| [電機工程研究所] 期刊論文 |
2004 |
Si+ ion implanted MPS bulk GaN diodes |
Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS |
|
| [電機工程研究所] 期刊論文 |
2006 |
Si-diffused GaN for enhancernent-mode GaN MOSFET on Si applications |
Jang,S; Ren,F; Pearton,SJ; Gila,BP; Hlad,M; Abernathy,CR; Yang,H; Pan,CJ; Chyi,JI; Bove,P; Lahreche,H; Thuret,J |
|
| [電機工程研究所] 期刊論文 |
2002 |
Single-crystal GaN/Gd2O3/GaN heterostructure |
Hong,M; Kwo,J; Chu,SNG; Mannaerts,JP; Kortan,AR; Ng,HM; Cho,AY; Anselm,KA; Lee,CM; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2001 |
SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors |
Johnson,JW; Gila,BP; Luo,B; Lee,KP; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Ren,F |
|
| [電機工程學系] 期刊論文 |
2010 |
Site-controlled self-assembled InAs quantum dots grown on GaAs substrates |
Lin,SY; Tseng,CC; Chung,TH; Liao,WH; Chen,SH; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2000 |
Spatial distribution of electrical properties in GaN p-i-n rectifiers |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
|
| [電機工程學系] 期刊論文 |
2010 |
Spectroscopic ellipsometric analysis of ZnSe(1-x)O(x) layers with different O compositions |
Uma,K; Chen,CY; Chao,CK; Wu,CH; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2000 |
Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures |
Chen,CC; Chuang,HW; Chi,GC; Chuo,CC; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2000 |
Stimulated emission study of InGaN/GaN multiple quantum well structures |
Liao,CC; Feng,SW; Yang,CC; Lin,YS; Ma,KJ; Chuo,CC; Lee,CM; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
1996 |
Strain relaxation and crystallographic tilt of compositional graded InxGa1-xAs and InxAl1-xAs (0<x<0.3) epilayers grown on GaAs substrates |
Shieh,JL; Chyi,JI; Pan,JW; Lin,RM |
|
| [電機工程研究所] 期刊論文 |
1995 |
STUDY OF THE OPTICAL-PROPERTIES OF IN-0.52(ALXGA1-X)(0.48)AS BY VARIABLE-ANGLE SPECTROSCOPIC ELLIPSOMETRY |
PAN,JW; SHIEH,JL; GAU,JH; CHYI,JI; LEE,JC; LING,KJ |
|
| [電機工程研究所] 期刊論文 |
2000 |
Surface and bulk leakage currents in high breakdown GaN rectifiers |
Ren,F; Zhang,AP; Dang,GT; Cao,XA; Cho,H; Pearton,SJ; Chyi,JI; Lee,CM; Chuo,CC |
|
| [電機工程研究所] 期刊論文 |
2003 |
Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells |
Peng,LH; Shih,CW; Lai,CM; Chuo,CC; Chyi,JI |
|
| [電機工程學系] 期刊論文 |
2010 |
Tailoring of the Wave Function Overlaps InAs/GaAs(1-x)Sb(x) Type-II Quantum Dots |
Hsu,WT; Liao,YA; Lu,SK; Cheng,SJ; Chiu,PC; Chyi,JI; Chang,WH |
|
| [電機工程研究所] 期刊論文 |
2000 |
Temperature dependence of GaN high breakdown voltage diode rectifiers |
Chyi,JI; Lee,CM; Chuo,CC; Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Chu,SNG; Wilson,RG |
|
| [電機工程研究所] 期刊論文 |
2001 |
Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes |
Lee,CM; Chuo,CC; Dai,JF; Zheng,XF; Chyi,JI |
|
| [電機工程學系] 期刊論文 |
2010 |
Temperature-Dependent Characteristics of a GaN/InGaN/ZnO Heterojunction Bipolar Transistor |
Hsueh,KP; Pan,CT; Li,CT; Lin,HC; Hsin,YM; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2004 |
Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates |
Kang,BS; Ren,F; Irokawa,Y; Baik,KW; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Ko,HJ; Lee,HY |
|
| [物理研究所] 期刊論文 |
2000 |
Temperature dependent performance of GaN Schottky diode rectifiers |
Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Lee,CM; Chuo,CC; Chyi,JI; Chi,GC; Han,J; Chu,SNG; Wilson,RG |
|
| [物理研究所] 期刊論文 |
1998 |
The Fermi level of annealed low-temperature GaAs on Si-delta-doped GaAs grown by molecular beam epitaxy |
Lee,WC; Hsu,TM; Wang,SC; Chang,MN; Chyi,JI |
|
| [電機工程學系] 期刊論文 |
2011 |
The impact of trimethylindium treatment time during growth interruption on the carrier dynamics of InGaN/GaN multiple quantum wells |
Feng,SW; Lin,HC; Chyi,JI; Tsai,CY; Huang,CJ; Wang,HC; Yang,FW; Lin,YS |
|
| [電機工程研究所] 期刊論文 |
2004 |
The microwave power performance comparisons of AlxGa1-xAs/In0.15Ga0.85As (x=0.3, 0.5, 0.7, 1.0) doped-channel HFETs |
Chin,HC; Yang,SC; Chan,YJ; Chen,SH; Liu,WS; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
1996 |
Theoretical study of the temperature dependence of 1.3-mu m AlGaInAs-InP multiple-quantum-well lasers |
Pan,JW; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2002 |
Thermal annealing effects on stimulated emission of high-indium-content InGaN/GaN single quantum well structure |
Chen,CC; Hsieh,KL; Chi,GC; Chuo,CC; Chyi,JI; Chang,CA |
|
| [電機工程研究所] 期刊論文 |
2006 |
Thermal stability improvement by using Pd/NiO/Al/Ti/Au reflective ohmic contacts to p-GaN for flip-chip ultraviolet light-emitting diodes |
Pan,CC; Chen,GT; Hsu,WJ; Lin,CW; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
1994 |
THERMAL-STABILITY OF STRAINED ALGAAS/INXGA1-XAS (0.15-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL STRUCTURES |
YANG,MT; LIN,RM; CHAN,YJ; SHIEH,JL; CHYI,JI |
|
| [電機工程研究所] 期刊論文 |
2003 |
Transport in a gated Al0.18Ga0.82N/GaN electron system |
Juang,JR; Huang,TY; Chen,TM; Lin,MG; Kim,GH; Lee,Y; Liang,CT; Hang,DR; Chen,YF; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2000 |
Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing |
Hsu,TM; Lan,YS; Chang,WH; Yeh,NT; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2001 |
Two-component photoluminescence decay in InGaN/GaN multiple quantum well structures |
Feng,SW; Cheng,YC; Liao,CC; Chung,YY; Liu,CW; Yang,CC; Lin,YS; Ma,KJ; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2003 |
Type-II Zn1-xMnxSe/ZnSe1-yTey quantum wells |
Yang,CS; Cheng,CC; Kuo,MC; Tseng,PY; Shen,JL; Lee,J; Chou,WC; Jeng,S; Lai,CY; Hsu,TM; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2005 |
Ultrafast carrier dynamics in an InGaN thin film |
Wang,HC; Lu,YC; Teng,CC; Chen,YS; Yang,CC; Ma,KJ; Pan,CC; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
1994 |
UNSTRAINED IN0.3GA0.7AS/IN0.29AL0.71AS RESONANT-TUNNELING DIODES GROWN ON GAAS |
HWANG,HP; SHIEH,JL; LIN,RM; CHYI,JI; TU,SL; PENG,CK; YANG,SJ |
|
| [電機工程研究所] 期刊論文 |
2000 |
Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chuo,CC; Lee,CM |
|
| [電機工程研究所] 期刊論文 |
2001 |
Vertical and lateral GaN rectifiers on free-standing GaN substrates |
Zhang,AP; Johnson,JW; Luo,B; Ren,F; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI |
|
| [電機工程研究所] 期刊論文 |
2003 |
X-ray scattering studies on InGaAs quantum dots |
Hsu,CH; Lee,HY; Hsieh,YW; Stetsko,YP; Tang,MT; Liang,KS; Yeh,NT; Chyi,JI; Noh,DY |
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