Items for Author "Chang,SJ"
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Showing 58 items.
Collection |
Date |
Title |
Authors |
Bitstream |
[光電科學研究所] 期刊論文 |
2009 |
AlGaN/GaN Schottky Barrier Photodetector With Multi-MgxNy/GaN Buffer |
Chang,SJ; Lee,KH; Chang,PC; Wang,YC; Kuo,CH; Wu,SL |
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[光電科學研究所] 期刊論文 |
2009 |
Nitride-Based Asymmetric Two-Step Light-Emitting Diode With In0.08Ga0.92N Shallow Step |
Kuo,CH; Fu,YK; Yeh,CL; Tun,CJ; Chen,PH; Lai,WC; Chang,SJ |
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[電機工程研究所] 期刊論文 |
2003 |
Liquid phase deposited SiO2 on GaN |
Wu,HR; Lee,KW; Nian,TB; Chou,DW; Wu,JJH; Wang,YH; Houng,MP; Sze,PW; Su,YK; Chang,SJ; Ho,CH; Chiang,CI; Chern,YT; Juang,FS; Wen,TC; Lee,WI; Chyi,JI |
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[化學研究所] 期刊論文 |
2005 |
Low band gap-conjugated polymer derivatives |
Wu,CG; Hsieh,CW; Chen,DC; Chang,SJ; Chen,KY |
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[光電科學與工程學系] 期刊論文 |
2005 |
ICP etching of sapphire substrates |
Hsu,YP; Chang,SJ; Su,YK; Sheu,JK; Kuo,CH; Chang,CS; Shei,SC |
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[光電科學與工程學系] 期刊論文 |
2005 |
Nitride-based LEDs with ITO on nanostructured silicon contact layers |
Kuo,CH; Chang,SJ; Chen,SC |
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[光電科學與工程學系] 期刊論文 |
2005 |
Nitride-based light-emitting diodes with p-AlInGaN surface layers |
Kuo,CH; Lin,CC; Chang,SJ; Hsu,YP; Tsai,JM; Lai,WC; Wang,PT |
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[光電科學與工程學系] 期刊論文 |
2005 |
The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors |
Wang,CK; Ko,TK; Chang,CS; Chang,SJ; Su,YK; Wen,TC; Kuo,CH; Chiou,YZ |
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[光電科學與工程學系] 期刊論文 |
2004 |
Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs |
Hsu,YP; Chang,SJ; Su,YK; Sheu,JK; Lee,CT; Wen,TC; Wu,LW; Kuo,CH; Chang,CS; Shei,SC |
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[光電科學與工程學系] 期刊論文 |
2004 |
Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers |
Chang,SJ; Wu,LW; Su,YK; Hsu,YP; Lai,WC; Tsai,JA; Sheu,JK; Lee,CT |
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[光電科學與工程學系] 期刊論文 |
2004 |
Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures |
Wen,TC; Chang,SJ; Lee,CT; Lai,WC; Sheu,JK |
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[光電科學與工程學系] 期刊論文 |
2004 |
Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer |
Lee,ML; Sheu,JK; Su,YK; Chang,SJ; Lai,WC; Chi,GC |
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[光電科學與工程學系] 期刊論文 |
2001 |
GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals |
Su,YK; Chiou,YZ; Juang,FS; Chang,SJ; Sheu,JK |
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[光電科學研究中心] 期刊論文 |
2004 |
Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact |
Chang,SJ; Chang,CS; Su,YK; Chuang,RW; Lai,WC; Kuo,CH; Hsu,YP; Lin,YC; Shei,SC; Lo,HM; Ke,JC; Sheu,JK |
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[光電科學研究中心] 期刊論文 |
2004 |
Nitride-based near-ultraviolet LEDs with an ITO transparent contact |
Kuo,CH; Chang,SJ; Su,Y; Chuang,RW; Chang,CS; Wu,LW; Lai,WC; Chen,JF; Sheu,J; Lo,HM; Tsai,JM |
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[光電科學研究中心] 期刊論文 |
2003 |
Deep level defect in Si-implanted GaN n(+)-p junction |
Chen,XD; Huang,Y; Fung,S; Beling,CD; Ling,CC; Sheu,JK; Lee,ML; Chi,GC; Chang,SJ |
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[光電科學研究中心] 期刊論文 |
2003 |
High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact |
Chang,CS; Chang,SJ; Su,YK; Kuo,CH; Lai,WC; Lin,YC; Hsu,YP; Shei,SC; Tsai,JM; Lo,HM; Ke,JC; Shen,JK |
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[光電科學研究中心] 期刊論文 |
2003 |
In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer |
Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Hsu,YP; Kuo,CH; Lai,WC; Wen,TC; Tsai,JM; Sheu,JK |
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[光電科學研究中心] 期刊論文 |
2003 |
InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer |
Wu,LW; Chang,SJ; Su,YK; Tsai,TY; Wen,TC; Kuo,CH; Lai,WC; Sheu,JK; Tsai,JM; Chen,SC; Huang,BR |
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[光電科學研究中心] 期刊論文 |
2003 |
InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping |
Wen,TC; Chang,SJ; Su,YK; Wu,LW; Kuo,CH; Lai,WC; Sheu,JK; Tsai,TY |
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[光電科學研究中心] 期刊論文 |
2003 |
Nitride-based blue LEDs with GaN/SiN double buffer layers |
Kuo,CH; Chang,SJ; Su,YK; Wang,CK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Lin,CC |
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[光電科學研究中心] 期刊論文 |
2003 |
Nitride-based green light-emitting diodes with high temperature GaN barrier layers |
Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Wen,TC; Kuo,CH; Lai,WC; Chang,CS; Tsai,JM; Sheu,JK |
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[光電科學研究中心] 期刊論文 |
2003 |
Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer |
Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Chen,JF; Shen,JK; Tsai,JM |
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[光電科學研究中心] 期刊論文 |
2003 |
Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers |
Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Chen,SC |
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[光電科學研究中心] 期刊論文 |
2003 |
n-UV plus blue/green/red white light emitting diode lamps |
Kuo,CH; Sheu,JK; Chang,SJ; Su,YK; Wu,LW; Tsai,JM; Liu,CH; Wu,RK |
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[光電科學研究中心] 期刊論文 |
2003 |
Si and Zn co-doped InGaN-GaN white light-emitting diodes |
Chang,SJ; Wu,LW; Su,YK; Kuo,CH; Lai,WC; Hsu,YP; Sheu,JK; Chen,SF; Tsai,JM |
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[光電科學研究中心] 期刊論文 |
2003 |
White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors |
Sheu,JK; Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Lin,YC; Lai,WC; Tsai,JM; Chi,GC; Wu,RK |
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[光電科學研究中心] 期刊論文 |
2002 |
400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes |
Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Chen,JF; Tsai,JM |
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[光電科學研究中心] 期刊論文 |
2002 |
Characterization of Si implants in p-type GaN |
Sheu,JK; Lee,ML; Tun,CJ; Kao,CJ; Yeh,LS; Chang,SJ; Chi,GC |
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[光電科學研究中心] 期刊論文 |
2002 |
Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes |
Wu,LW; Chang,SJ; Wen,TC; Su,YK; Chen,JF; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK |
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[光電科學研究中心] 期刊論文 |
2002 |
InGaN/GaN light emitting diodes activated in O-2 ambient |
Kuo,CH; Chang,SJ; Su,YK; Chen,JF; Wu,LW; Sheu,JK; Chen,CH; Chi,GC |
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[光電科學研究中心] 期刊論文 |
2002 |
InGaN/GaN tunnel-injection blue light-emitting diodes |
Wen,TC; Chang,SJ; Wu,LW; Su,YK; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK; Chen,JF |
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[光電科學研究中心] 期刊論文 |
2002 |
Low temperature activation of Mg-doped GaN in O-2 ambient |
Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Chen,CH; Chi,GC |
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[光電科學研究中心] 期刊論文 |
2002 |
n(+)-GaN formed by Si implantation into p-GaN |
Sheu,JK; Tun,CJ; Tsai,MS; Lee,CC; Chi,GC; Chang,SJ; Su,YK |
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[光電科學研究中心] 期刊論文 |
2002 |
White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer |
Sheu,JK; Pan,CJ; Chi,GC; Kuo,CH; Wu,LW; Chen,CH; Chang,SJ; Su,YK |
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[光電科學研究中心] 期刊論文 |
2001 |
Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer |
Sheu,JK; Tsai,JM; Shei,SC; Lai,WC; Wen,TC; Kou,CH; Su,YK; Chang,SJ; Chi,GC |
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[物理研究所] 期刊論文 |
2003 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer |
Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,SJ; Kao,CJ; Tun,CJ; Chen,MG; Chang,WH; Chi,GC; Tsai,JM |
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[物理研究所] 期刊論文 |
2003 |
GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts |
Chang,SJ; Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,CS; Kao,CJ; Chi,GC; Tsai,JA |
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[物理研究所] 期刊論文 |
2003 |
Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes |
Chang,SJ; Chen,CH; Su,YK; Sheu,JK; Lai,WC; Tsai,JM; Liu,CH; Chen,SC |
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[物理研究所] 期刊論文 |
2003 |
Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer |
Sheu,JK; Kao,CJ; Lee,ML; Lai,WC; Yeh,LS; Chi,GC; Chang,SJ; Su,YK; Tsa,JM |
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[物理研究所] 期刊論文 |
2003 |
Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure |
Yeh,LS; Lee,ML; Sheu,JK; Chen,MG; Kao,CJ; Chi,GC; Chang,SJ; Su,YK |
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[物理研究所] 期刊論文 |
2002 |
GaN p-n junction diode formed by Si ion implantation into p-GaN |
Lee,ML; Sheu,JK; Yeh,LS; Tsai,MS; Kao,CJ; Tun,CJ; Chang,SJ; Chi,GC |
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[物理研究所] 期刊論文 |
2002 |
High brightness green light emitting diodes with charge asymmetric resonance tunneling structure |
Chen,CH; Su,YK; Chang,SJ; Chi,GC; Sheu,JK; Chen,JF; Liu,CH; Liaw,YH |
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[物理研究所] 期刊論文 |
2002 |
High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures |
Chen,CH; Chang,SJ; Su,YK; Chi,GC; Sheu,JK; Chen,JF |
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[物理研究所] 期刊論文 |
2002 |
Nitride-based cascade near white light-emitting diodes |
Chen,CH; Chang,SJ; Su,YK; Sheu,JK; Chen,JF; Kuo,CH; Lin,YC |
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[物理研究所] 期刊論文 |
2002 |
Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN |
Sheu,JK; Lee,ML; Yeh,LS; Kao,CJ; Tun,CJ; Chen,MG; Chi,GC; Chang,SJ; Su,YK; Lee,CT |
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[物理研究所] 期刊論文 |
2001 |
GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts |
Chen,CH; Chang,SJ; Su,YK; Chi,GC; Chi,JY; Chang,CA; Sheu,JK; Chen,JF |
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[物理研究所] 期刊論文 |
2001 |
InGaN-AlInGaN multiquantum-well LEDs |
Lai,WC; Chang,SJ; Yokoyam,M; Sheu,JK; Chen,JF |
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[物理研究所] 期刊論文 |
2001 |
Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching |
Chen,CHS; Chang,SJ; Su,YKI; Chi,GC; Sheu,JK; Lin,IC |
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[物理研究所] 期刊論文 |
1998 |
Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers |
Sheu,JK; Su,YK; Chang,SJ; Chi,GC; Lin,KB; Liu,CC; Chiu,CC |
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[物理研究所] 期刊論文 |
1998 |
Investigation of wafer-bonded (AlxGa1-x)(0.5)In0.5P/GaP light-emitting diodes |
Sheu,JK; Su,YK; Chang,SJ; Jou,MJ; Liu,CC; Chi,GC |
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[物理研究所] 期刊論文 |
1996 |
AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology |
Chang,SJ; Sheu,JK; Su,YK; Jou,MJ; Chi,GC |
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[光電科學與工程學系] 期刊論文 |
2010 |
Dislocation reduction in nitride-based Schottky diodes by using multiple Mg(x)N(y)/GaN nucleation layers |
Lee,KH; Chang,PC; Chang,SJ; Su,YK; Wang,YC; Yu,CL; Kuo,CH |
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[光電科學與工程學系] 期刊論文 |
2010 |
Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step |
Kuo,CH; Fu,YK; Chi,GC; Chang,SJ |
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[光電科學與工程學系] 期刊論文 |
2010 |
GaN Metal-Semiconductor-Metal Photodetectors Prepared on Nanorod Template |
Chang,SJ; Wang,SM; Chang,PC; Kuo,CH; Young,SJ; Chen,TP |
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[光電科學與工程學系] 期刊論文 |
2010 |
GaN Schottky Barrier Photodetectors |
Chang,SJ; Wang,SM; Chang,PC; Kuo,CH; Young,SJ; Chen,TP; Wu,SL; Huang,BR |
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[光電科學與工程學系] 期刊論文 |
2011 |
GaN Epitaxial Layers Prepared on Nano-Patterned Si(001) Substrate |
Huang,CC; Chang,SJ; Kuo,CH; Ko,CH; Wann,CH; Cheng,YC; Lin,WJ |
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[電機工程學系] 期刊論文 |
2011 |
Surface plasmon resonance biosensor with high anti-fouling ability for the detection of cardiac marker troponin T |
Liu,JT; Chen,CJ; Ikoma,T; Yoshioka,T; Cross,JS; Chang,SJ; Tsai,JZ; Tanaka,J |
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