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"Chang,SJ"的相關文件

類別	日期	題名	作者
[光電科學研究中心] 期刊論文	2003	High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact	Chang,CS; Chang,SJ; Su,YK; Kuo,CH; Lai,WC; Lin,YC; Hsu,YP; Shei,SC; Tsai,JM; Lo,HM; Ke,JC; Shen,JK
[光電科學研究中心] 期刊論文	2004	Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact	Chang,SJ; Chang,CS; Su,YK; Chuang,RW; Lai,WC; Kuo,CH; Hsu,YP; Lin,YC; Shei,SC; Lo,HM; Ke,JC; Sheu,JK
[物理研究所] 期刊論文	2003	Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes	Chang,SJ; Chen,CH; Su,YK; Sheu,JK; Lai,WC; Tsai,JM; Liu,CH; Chen,SC
[光電科學研究中心] 期刊論文	2002	400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes	Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Chen,JF; Tsai,JM
[光電科學研究所] 期刊論文	2009	AlGaN/GaN Schottky Barrier Photodetector With Multi-MgxNy/GaN Buffer	Chang,SJ; Lee,KH; Chang,PC; Wang,YC; Kuo,CH; Wu,SL
[物理研究所] 期刊論文	2003	GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts	Chang,SJ; Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,CS; Kao,CJ; Chi,GC; Tsai,JA
[物理研究所] 期刊論文	1996	AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology	Chang,SJ; Sheu,JK; Su,YK; Jou,MJ; Chi,GC
[光電科學與工程學系] 期刊論文	2010	GaN Schottky Barrier Photodetectors	Chang,SJ; Wang,SM; Chang,PC; Kuo,CH; Young,SJ; Chen,TP; Wu,SL; Huang,BR
[光電科學與工程學系] 期刊論文	2010	GaN Metal-Semiconductor-Metal Photodetectors Prepared on Nanorod Template	Chang,SJ; Wang,SM; Chang,PC; Kuo,CH; Young,SJ; Chen,TP
[光電科學與工程學系] 期刊論文	2004	Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers	Chang,SJ; Wu,LW; Su,YK; Hsu,YP; Lai,WC; Tsai,JA; Sheu,JK; Lee,CT
[光電科學研究中心] 期刊論文	2003	Si and Zn co-doped InGaN-GaN white light-emitting diodes	Chang,SJ; Wu,LW; Su,YK; Kuo,CH; Lai,WC; Hsu,YP; Sheu,JK; Chen,SF; Tsai,JM
[物理研究所] 期刊論文	2001	GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts	Chen,CH; Chang,SJ; Su,YK; Chi,GC; Chi,JY; Chang,CA; Sheu,JK; Chen,JF
[物理研究所] 期刊論文	2002	High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures	Chen,CH; Chang,SJ; Su,YK; Chi,GC; Sheu,JK; Chen,JF
[物理研究所] 期刊論文	2002	Nitride-based cascade near white light-emitting diodes	Chen,CH; Chang,SJ; Su,YK; Sheu,JK; Chen,JF; Kuo,CH; Lin,YC
[物理研究所] 期刊論文	2002	High brightness green light emitting diodes with charge asymmetric resonance tunneling structure	Chen,CH; Su,YK; Chang,SJ; Chi,GC; Sheu,JK; Chen,JF; Liu,CH; Liaw,YH
[物理研究所] 期刊論文	2001	Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching	Chen,CHS; Chang,SJ; Su,YKI; Chi,GC; Sheu,JK; Lin,IC
[光電科學研究中心] 期刊論文	2003	Deep level defect in Si-implanted GaN n(+)-p junction	Chen,XD; Huang,Y; Fung,S; Beling,CD; Ling,CC; Sheu,JK; Lee,ML; Chi,GC; Chang,SJ
[光電科學與工程學系] 期刊論文	2005	ICP etching of sapphire substrates	Hsu,YP; Chang,SJ; Su,YK; Sheu,JK; Kuo,CH; Chang,CS; Shei,SC
[光電科學與工程學系] 期刊論文	2004	Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs	Hsu,YP; Chang,SJ; Su,YK; Sheu,JK; Lee,CT; Wen,TC; Wu,LW; Kuo,CH; Chang,CS; Shei,SC
[光電科學與工程學系] 期刊論文	2011	GaN Epitaxial Layers Prepared on Nano-Patterned Si(001) Substrate	Huang,CC; Chang,SJ; Kuo,CH; Ko,CH; Wann,CH; Cheng,YC; Lin,WJ
[光電科學與工程學系] 期刊論文	2005	Nitride-based LEDs with ITO on nanostructured silicon contact layers	Kuo,CH; Chang,SJ; Chen,SC
[光電科學研究中心] 期刊論文	2004	Nitride-based near-ultraviolet LEDs with an ITO transparent contact	Kuo,CH; Chang,SJ; Su,Y; Chuang,RW; Chang,CS; Wu,LW; Lai,WC; Chen,JF; Sheu,J; Lo,HM; Tsai,JM
[光電科學研究中心] 期刊論文	2002	InGaN/GaN light emitting diodes activated in O-2 ambient	Kuo,CH; Chang,SJ; Su,YK; Chen,JF; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
[光電科學研究中心] 期刊論文	2003	Nitride-based blue LEDs with GaN/SiN double buffer layers	Kuo,CH; Chang,SJ; Su,YK; Wang,CK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Lin,CC
[光電科學研究中心] 期刊論文	2003	Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer	Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Chen,JF; Shen,JK; Tsai,JM
[光電科學研究中心] 期刊論文	2002	Low temperature activation of Mg-doped GaN in O-2 ambient	Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
[光電科學研究中心] 期刊論文	2003	Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers	Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Chen,SC
[光電科學與工程學系] 期刊論文	2010	Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step	Kuo,CH; Fu,YK; Chi,GC; Chang,SJ
[光電科學研究所] 期刊論文	2009	Nitride-Based Asymmetric Two-Step Light-Emitting Diode With In0.08Ga0.92N Shallow Step	Kuo,CH; Fu,YK; Yeh,CL; Tun,CJ; Chen,PH; Lai,WC; Chang,SJ
[光電科學與工程學系] 期刊論文	2005	Nitride-based light-emitting diodes with p-AlInGaN surface layers	Kuo,CH; Lin,CC; Chang,SJ; Hsu,YP; Tsai,JM; Lai,WC; Wang,PT
[光電科學研究中心] 期刊論文	2003	n-UV plus blue/green/red white light emitting diode lamps	Kuo,CH; Sheu,JK; Chang,SJ; Su,YK; Wu,LW; Tsai,JM; Liu,CH; Wu,RK
[物理研究所] 期刊論文	2001	InGaN-AlInGaN multiquantum-well LEDs	Lai,WC; Chang,SJ; Yokoyam,M; Sheu,JK; Chen,JF
[光電科學與工程學系] 期刊論文	2010	Dislocation reduction in nitride-based Schottky diodes by using multiple Mg(x)N(y)/GaN nucleation layers	Lee,KH; Chang,PC; Chang,SJ; Su,YK; Wang,YC; Yu,CL; Kuo,CH
[物理研究所] 期刊論文	2003	Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,SJ; Kao,CJ; Tun,CJ; Chen,MG; Chang,WH; Chi,GC; Tsai,JM
[光電科學與工程學系] 期刊論文	2004	Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer	Lee,ML; Sheu,JK; Su,YK; Chang,SJ; Lai,WC; Chi,GC
[物理研究所] 期刊論文	2002	GaN p-n junction diode formed by Si ion implantation into p-GaN	Lee,ML; Sheu,JK; Yeh,LS; Tsai,MS; Kao,CJ; Tun,CJ; Chang,SJ; Chi,GC
[電機工程學系] 期刊論文	2011	Surface plasmon resonance biosensor with high anti-fouling ability for the detection of cardiac marker troponin T	Liu,JT; Chen,CJ; Ikoma,T; Yoshioka,T; Cross,JS; Chang,SJ; Tsai,JZ; Tanaka,J
[光電科學研究中心] 期刊論文	2003	White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors	Sheu,JK; Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Lin,YC; Lai,WC; Tsai,JM; Chi,GC; Wu,RK
[物理研究所] 期刊論文	2003	Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer	Sheu,JK; Kao,CJ; Lee,ML; Lai,WC; Yeh,LS; Chi,GC; Chang,SJ; Su,YK; Tsa,JM
[光電科學研究中心] 期刊論文	2002	Characterization of Si implants in p-type GaN	Sheu,JK; Lee,ML; Tun,CJ; Kao,CJ; Yeh,LS; Chang,SJ; Chi,GC
[物理研究所] 期刊論文	2002	Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN	Sheu,JK; Lee,ML; Yeh,LS; Kao,CJ; Tun,CJ; Chen,MG; Chi,GC; Chang,SJ; Su,YK; Lee,CT
[光電科學研究中心] 期刊論文	2002	White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer	Sheu,JK; Pan,CJ; Chi,GC; Kuo,CH; Wu,LW; Chen,CH; Chang,SJ; Su,YK
[物理研究所] 期刊論文	1998	Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers	Sheu,JK; Su,YK; Chang,SJ; Chi,GC; Lin,KB; Liu,CC; Chiu,CC
[物理研究所] 期刊論文	1998	Investigation of wafer-bonded (AlxGa1-x)(0.5)In0.5P/GaP light-emitting diodes	Sheu,JK; Su,YK; Chang,SJ; Jou,MJ; Liu,CC; Chi,GC
[光電科學研究中心] 期刊論文	2001	Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer	Sheu,JK; Tsai,JM; Shei,SC; Lai,WC; Wen,TC; Kou,CH; Su,YK; Chang,SJ; Chi,GC
[光電科學研究中心] 期刊論文	2002	n(+)-GaN formed by Si implantation into p-GaN	Sheu,JK; Tun,CJ; Tsai,MS; Lee,CC; Chi,GC; Chang,SJ; Su,YK
[光電科學與工程學系] 期刊論文	2001	GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals	Su,YK; Chiou,YZ; Juang,FS; Chang,SJ; Sheu,JK
[光電科學與工程學系] 期刊論文	2005	The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors	Wang,CK; Ko,TK; Chang,CS; Chang,SJ; Su,YK; Wen,TC; Kuo,CH; Chiou,YZ
[光電科學與工程學系] 期刊論文	2004	Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures	Wen,TC; Chang,SJ; Lee,CT; Lai,WC; Sheu,JK
[光電科學研究中心] 期刊論文	2003	InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping	Wen,TC; Chang,SJ; Su,YK; Wu,LW; Kuo,CH; Lai,WC; Sheu,JK; Tsai,TY
[光電科學研究中心] 期刊論文	2002	InGaN/GaN tunnel-injection blue light-emitting diodes	Wen,TC; Chang,SJ; Wu,LW; Su,YK; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK; Chen,JF
[化學研究所] 期刊論文	2005	Low band gap-conjugated polymer derivatives	Wu,CG; Hsieh,CW; Chen,DC; Chang,SJ; Chen,KY
[電機工程研究所] 期刊論文	2003	Liquid phase deposited SiO2 on GaN	Wu,HR; Lee,KW; Nian,TB; Chou,DW; Wu,JJH; Wang,YH; Houng,MP; Sze,PW; Su,YK; Chang,SJ; Ho,CH; Chiang,CI; Chern,YT; Juang,FS; Wen,TC; Lee,WI; Chyi,JI
[光電科學研究中心] 期刊論文	2003	In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer	Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Hsu,YP; Kuo,CH; Lai,WC; Wen,TC; Tsai,JM; Sheu,JK
[光電科學研究中心] 期刊論文	2003	Nitride-based green light-emitting diodes with high temperature GaN barrier layers	Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Wen,TC; Kuo,CH; Lai,WC; Chang,CS; Tsai,JM; Sheu,JK
[光電科學研究中心] 期刊論文	2003	InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer	Wu,LW; Chang,SJ; Su,YK; Tsai,TY; Wen,TC; Kuo,CH; Lai,WC; Sheu,JK; Tsai,JM; Chen,SC; Huang,BR
[光電科學研究中心] 期刊論文	2002	Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes	Wu,LW; Chang,SJ; Wen,TC; Su,YK; Chen,JF; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK
[物理研究所] 期刊論文	2003	Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure	Yeh,LS; Lee,ML; Sheu,JK; Chen,MG; Kao,CJ; Chi,GC; Chang,SJ; Su,YK

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