"Ren,F"的相关文件
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类别 |
日期 |
题名 |
作者 |
档案 |
| [電機工程研究所] 期刊論文 |
2004 |
Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers |
Buyanova,IA; Bergman,JP; Chen,WM; Thaler,G; Frazier,R; Abernathy,CR; Pearton,SJ; Kim,J; Ren,F; Kyrychenko,FV; Stanton,CJ; Pan,CC; Chen,GT; Chyi,J; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2004 |
On the origin of spin loss in GaMnN/InGaN light-emitting diodes |
Buyanova,IA; Izadifard,M; Chen,WM; Kim,J; Ren,F; Thaler,G; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2004 |
Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes |
Buyanova,IA; Izadifard,M; Storasta,L; Chen,WM; Kim,J; Ren,F; Thaler,G; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM |
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| [物理研究所] 期刊論文 |
2000 |
Temperature dependent performance of GaN Schottky diode rectifiers |
Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Lee,CM; Chuo,CC; Chyi,JI; Chi,GC; Han,J; Chu,SNG; Wilson,RG |
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| [物理研究所] 期刊論文 |
2005 |
Transport properties of InN nanowires |
Chang,CY; Chi,GC; Wang,WM; Chen,LC; Chen,KH; Ren,F; Pearton,SJ |
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| [物理學系] 期刊論文 |
2011 |
Oxygen sensors made by monolayer graphene under room temperature |
Chen,CW; Hung,SC; Yang,MD; Yeh,CW; Wu,CH; Chi,GC; Ren,F; Pearton,SJ |
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| [物理學系] 期刊論文 |
2010 |
Catalyst-free ZnO nanowires grown on a-plane GaN |
Chen,CW; Pan,CJ; Tsao,FC; Liu,YL; Kuo,CW; Kuo,CH; Chi,GC; Chen,PH; Lai,WC; Hsueh,TH; Tun,CJ; Chang,CY; Pearton,SJ; Ren,F |
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| [電機工程研究所] 期刊論文 |
2005 |
Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection |
Chen,WM; Buyanova,IA; Nishibayashi,K; Kayanuma,K; Seo,K; Murayama,A; Oka,Y; Thaler,G; Frazier,R; Abernathy,CR; Ren,F; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2005 |
Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors |
Chu,SNG; Ren,F; Pearton,SJ; Kang,BS; Kim,S; Gila,BP; Abernathy,CR; Chyi,JI; Johnson,WJ; Lin,J |
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| [電機工程研究所] 期刊論文 |
2000 |
Temperature dependence of GaN high breakdown voltage diode rectifiers |
Chyi,JI; Lee,CM; Chuo,CC; Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Chu,SNG; Wilson,RG |
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| [電機工程研究所] 期刊論文 |
1999 |
Growth and device performance of GaN Schottky rectifiers |
Chyi,JI; Lee,CM; Chuo,CC; Chi,GC; Dang,GT; Zhang,AP; Ren,F; Cao,XA; Pearton,SJ; Chu,SNG; Wilson,RG |
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| [電機工程研究所] 期刊論文 |
2000 |
High voltage GaN Schottky rectifiers |
Dang,GT; Zhang,AP; Ren,F; Cao,XNA; Pearton,SJ; Cho,H; Han,J; Chyi,JI; Lee,CM; Chuo,CC; Chu,SNG; Wilson,RG |
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| [光電科學研究中心] 期刊論文 |
2009 |
Optical and structural properties of Mg-ion implanted GaN nanowires |
Huang,PJ; Chen,CW; Chen,JY; Chi,GC; Pan,CJ; Kuo,CC; Chen,LC; Hsu,CW; Chen,KH; Hung,SC; Chang,CY; Pearton,SJ; Ren,F |
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| [物理研究所] 期刊論文 |
2009 |
Minipressure sensor using AlGaN/GaN high electron mobility transistors |
Hung,SC; Chou,BH; Chang,CY; Lo,CF; Chen,KH; Wang,YL; Pearton,SJ; Dabiran,A; Chow,PP; Chi,GC; Ren,F |
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| [物理研究所] 期刊論文 |
2009 |
Surface morphology and optical properties of ZnO epilayers grown on Si(111) by metal organic chemical vapor deposition |
Hung,SC; Huang,PJ; Chan,CE; Uen,WY; Ren,F; Pearton,SJ; Yang,TN; Chiang,CC; Lan,SM; Chi,GC |
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| [物理研究所] 期刊論文 |
2005 |
Improved thermal stability CrB2 contacts on ZnO |
Ip,K; Khanna,R; Norton,DP; Pearton,SJ; Ren,F; Kravchenko,I; Kao,CJ; Chi,GC |
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| [物理研究所] 期刊論文 |
2005 |
Thermal stability of W2B and W2B5 contacts on ZnO |
Ip,K; Khanna,R; Norton,DP; Pearton,SJ; Ren,F; Kravchenko,I; Kao,CJ; Chi,GC |
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| [電機工程研究所] 期刊論文 |
2004 |
Si+ ion implanted MPS bulk GaN diodes |
Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS |
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| [電機工程研究所] 期刊論文 |
2004 |
Lateral Schottky GaN rectifiers formed by Si+ ion implantation |
Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2003 |
Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes |
Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2004 |
2.6 A, 0.69 MW cm(-2) single-chip bulk GaN p-i-n rectifier |
Irokawa,Y; Luo,B; Kang,BS; Kim,J; LaRoche,JR; Ren,F; Baik,KH; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ |
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| [電機工程研究所] 期刊論文 |
2003 |
Current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers |
Irokawa,Y; Luo,B; Kim,J; LaRoche,JR; Ren,F; Baik,KH; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ |
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| [電機工程研究所] 期刊論文 |
2004 |
Reduction of surface-induced current collapse in AlGaN/GaN HFETs on freestanding GaN substrates |
Irokawa,Y; Luo,B; Ren,F; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ |
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| [電機工程研究所] 期刊論文 |
2004 |
DC characteristics of AlGaN/GaN heterostructure field-effect transistors on freestanding GaN substrates |
Irokawa,Y; Luo,B; Ren,F; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ; Pearton,SJ |
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| [電機工程研究所] 期刊論文 |
2004 |
MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors |
Irokawa,Y; Nakano,Y; Ishiko,M; Kachi,T; Kim,J; Ren,F; Gila,BP; Onstine,AH; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2006 |
Si-diffused GaN for enhancernent-mode GaN MOSFET on Si applications |
Jang,S; Ren,F; Pearton,SJ; Gila,BP; Hlad,M; Abernathy,CR; Yang,H; Pan,CJ; Chyi,JI; Bove,P; Lahreche,H; Thuret,J |
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| [電機工程研究所] 期刊論文 |
2001 |
SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors |
Johnson,JW; Gila,BP; Luo,B; Lee,KP; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Ren,F |
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| [電機工程研究所] 期刊論文 |
2001 |
Schottky rectifiers fabricated on free-standing GaN substrates |
Johnson,JW; LaRoch,JR; Ren,F; Gila,BP; Overberg,ME; Abernathy,CR; Chyi,JI; Chou,CC; Nee,TE; Lee,CM; Lee,KP; Park,SS; Park,YJ; Pearton,SJ |
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| [電機工程研究所] 期刊論文 |
2002 |
1.6 A GaN Schottky rectifiers on bulk GaN substrates |
Johnson,JW; Lou,B; Ren,F; Palmer,D; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2000 |
Gd2O3/GaN metal-oxide-semiconductor field-effect transistor |
Johnson,JW; Luo,B; Ren,F; Gila,BP; Krishnamoorthy,W; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
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| [化學工程與材料工程研究所] 期刊論文 |
2002 |
Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers |
Johnson,JW; Zhang,AP; Luo,WB; Ren,F; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2003 |
Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors |
Kang,BS; Kim,S; Kim,J; Ren,F; Baik,K; Pearton,SJ; Gila,BP; Abernathy,CR; Pan,CC; Chen,GT; Chyi,JI; Chandrasekaran,V; Sheplak,M; Nishida,T; Chu,SNG |
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| [電機工程研究所] 期刊論文 |
2004 |
Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates |
Kang,BS; Ren,F; Irokawa,Y; Baik,KW; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Ko,HJ; Lee,HY |
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| [物理研究所] 期刊論文 |
2005 |
Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors |
Kao,CJ; Chen,MC; Tun,CJ; Chi,GC; Sheu,JK; Lai,WC; Lee,ML; Ren,F; Pearton,SJ |
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| [物理研究所] 期刊論文 |
2005 |
Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition |
Kao,CJ; Kwon,YW; Heo,YW; Norton,DP; Pearton,SJ; Ren,F; Chi,GC |
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| [物理研究所] 期刊論文 |
2005 |
W2B-based ohmic contacts to n-GaN |
Khanna,R; Pearton,SJ; Ren,F; Kravchenko,I; Kao,CJ; Chi,GC |
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| [物理研究所] 期刊論文 |
2005 |
W2B-based rectifying contacts to n-GaN |
Khanna,R; Pearton,SJ; Ren,F; Kravchenko,I; Kao,CJ; Chi,GC |
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| [電機工程研究所] 期刊論文 |
2004 |
GalGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates |
LaRoche,JR; Luo,B; Ren,F; Baik,KH; Stodilka,D; Gila,B; Abernathy,CR; Pearton,SJ; Usikov,A; Tsvetkov,D; Soukhoveev,V; Gainer,G; Rechnikov,A; Dimitriev,V; Chen,GT; Pan,CC; Chyi,JI |
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| [光電科學研究中心] 期刊論文 |
2011 |
Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors |
Lo,CF; Chu,BH; Pearton,SJ; Dabiran,A; Chow,PP; Dore,S; Hung,SC; Chen,CW; Ren,F |
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| [電機工程學系] 期刊論文 |
2011 |
Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors |
Lo,CF; Ren,F; Chang,CY; Pearton,SJ; Chen,SH; Chang,CM; Wang,SY; Chyi,JI; Kravchenko,II |
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| [電機工程研究所] 期刊論文 |
2004 |
AlGaN/GaN HEMT based liquid sensors |
Mehandru,R; Luo,B; Kang,BS; Kim,J; Ren,F; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI |
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| [光電科學研究中心] 期刊論文 |
2009 |
Optical investigation of nitrogen ion implanted bulk ZnO |
Pall,CJ; Chen,JY; Chi,GC; Chou,BW; Pong,BJ; Ren,F; Chang,CY; Pearton,SJ |
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| [光電科學研究中心] 期刊論文 |
2009 |
Optical and structural properties of Eu-diffused and doped ZnO nanowires |
Pan,CJ; Chen,CW; Chen,JY; Huang,PJ; Chi,GC; Chang,CY; Ren,F; Pearton,SJ |
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| [電機工程研究所] 期刊論文 |
2000 |
Properties and effects of hydrogen in GaN |
Pearton,SJ; Cho,H; Ren,F; Chyi,JI; Han,J; Wilson,RG |
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| [電機工程研究所] 期刊論文 |
2001 |
GaN electronics for high power, high temperature applications |
Pearton,SJ; Ren,F; Zhang,AP; Dang,G; Cao,XA; Lee,KP; Cho,H; Gila,BP; Johnson,JW; Monier,C; Abernathy,CR; Han,J; Baca,AG; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chu,SNG |
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| [電機工程研究所] 期刊論文 |
2003 |
Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Overberg,ME; Thaler,GT; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2004 |
Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Frazier,RM; Gila,BP; Abernathy,CR; Pearton,SJ; Buyanova,IA; Rudko,GY; Chen,WM; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2003 |
Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Overberg,ME; Frazier,R; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM |
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| [光電科學與工程學系] 期刊論文 |
2001 |
Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chou,CC; Lee,CM |
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| [電機工程研究所] 期刊論文 |
2000 |
Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chuo,CC; Lee,CM |
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| [電機工程研究所] 期刊論文 |
2000 |
Spatial distribution of electrical properties in GaN p-i-n rectifiers |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
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| [電機工程研究所] 期刊論文 |
2000 |
Surface and bulk leakage currents in high breakdown GaN rectifiers |
Ren,F; Zhang,AP; Dang,GT; Cao,XA; Cho,H; Pearton,SJ; Chyi,JI; Lee,CM; Chuo,CC |
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| [物理研究所] 期刊論文 |
2005 |
Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes |
Yang,HS; Han,SY; Heo,YW; Baik,KH; Norton,DP; Pearton,SJ; Ren,F; Osinsky,A; Dong,JW; Hertog,B; Dabiran,AM; Chow,PP; Chernyak,L; Steiner,T; Kao,CJ; Chi,GC |
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| [電機工程研究所] 期刊論文 |
2000 |
Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers |
Zhang,AP; Dang,G; Ren,F; Han,J; Cho,H; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Chu,SNG |
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| [電機工程研究所] 期刊論文 |
2000 |
Processing and device performance of GaN power rectifiers |
Zhang,AP; Dang,GT; Cao,XA; Cho,H; Ren,F; Han,J; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chi,GC; Chu,SNG; Wilson,RG; Pearton,SJ |
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| [電機工程研究所] 期刊論文 |
2001 |
Vertical and lateral GaN rectifiers on free-standing GaN substrates |
Zhang,AP; Johnson,JW; Luo,B; Ren,F; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
Comparison of GaN p-i-n and Schottky rectifier performance |
Zhang,APP; Dang,GT; Ren,F; Cho,H; Lee,KP; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
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