"Chi,GC"的相關文件
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類別 |
日期 |
題名 |
作者 |
檔案 |
[化學研究所] 期刊論文 |
2002 |
Enhanced electroluminescence of polymer light-emitting diodes with direct polyaniline synthesized anodes |
Chen,CC; Hwang,SR; Li,WH; Lee,KC; Chi,GC; Hsiao,HT; Wu,CG |
|
[光電科學研究中心] 期刊論文 |
2009 |
Optical and structural properties of Eu-diffused and doped ZnO nanowires |
Pan,CJ; Chen,CW; Chen,JY; Huang,PJ; Chi,GC; Chang,CY; Ren,F; Pearton,SJ |
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[光電科學研究中心] 期刊論文 |
2009 |
Optical and structural properties of Mg-ion implanted GaN nanowires |
Huang,PJ; Chen,CW; Chen,JY; Chi,GC; Pan,CJ; Kuo,CC; Chen,LC; Hsu,CW; Chen,KH; Hung,SC; Chang,CY; Pearton,SJ; Ren,F |
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[光電科學研究中心] 期刊論文 |
2009 |
Optical investigation of nitrogen ion implanted bulk ZnO |
Pall,CJ; Chen,JY; Chi,GC; Chou,BW; Pong,BJ; Ren,F; Chang,CY; Pearton,SJ |
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[光電科學研究中心] 期刊論文 |
2005 |
Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy |
Pan,CJ; Tu,CW; Song,JJ; Cantwell,G; Lee,CC; Pong,BJ; Chi,GC |
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[光電科學研究中心] 期刊論文 |
2003 |
Deep level defect in Si-implanted GaN n(+)-p junction |
Chen,XD; Huang,Y; Fung,S; Beling,CD; Ling,CC; Sheu,JK; Lee,ML; Chi,GC; Chang,SJ |
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[光電科學研究中心] 期刊論文 |
2003 |
Fabrication of optical transmission elements in an SiNx membrane |
Lee,CC; Chang,YC; Chang,JY; Chiu,CF; Chi,GC |
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[光電科學研究中心] 期刊論文 |
2003 |
White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors |
Sheu,JK; Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Lin,YC; Lai,WC; Tsai,JM; Chi,GC; Wu,RK |
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[光電科學研究中心] 期刊論文 |
2002 |
Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN |
Chiou,JW; Mookerjee,S; Rao,KVR; Jan,JC; Tsai,HM; Asokan,K; Pong,WF; Chien,FZ; Tsai,MH; Chang,YK; Chen,YY; Lee,JF; Lee,CC; Chi,GC |
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[光電科學研究中心] 期刊論文 |
2002 |
Characterization of Si implants in p-type GaN |
Sheu,JK; Lee,ML; Tun,CJ; Kao,CJ; Yeh,LS; Chang,SJ; Chi,GC |
|
[光電科學研究中心] 期刊論文 |
2002 |
Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure |
Chen,CC; Hsieh,KL; Sheu,JK; Chi,GC; Jou,MJ; Lee,CH; Lin,MZ |
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[光電科學研究中心] 期刊論文 |
2002 |
InGaN/GaN light emitting diodes activated in O-2 ambient |
Kuo,CH; Chang,SJ; Su,YK; Chen,JF; Wu,LW; Sheu,JK; Chen,CH; Chi,GC |
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[光電科學研究中心] 期刊論文 |
2002 |
Low temperature activation of Mg-doped GaN in O-2 ambient |
Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Chen,CH; Chi,GC |
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[光電科學研究中心] 期刊論文 |
2002 |
n(+)-GaN formed by Si implantation into p-GaN |
Sheu,JK; Tun,CJ; Tsai,MS; Lee,CC; Chi,GC; Chang,SJ; Su,YK |
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[光電科學研究中心] 期刊論文 |
2002 |
Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching |
Wen,TC; Lee,WI; Sheu,JK; Chi,GC |
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[光電科學研究中心] 期刊論文 |
2002 |
The doping process and dopant characteristics of GaN |
Sheu,JK; Chi,GC |
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[光電科學研究中心] 期刊論文 |
2002 |
White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer |
Sheu,JK; Pan,CJ; Chi,GC; Kuo,CH; Wu,LW; Chen,CH; Chang,SJ; Su,YK |
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[光電科學研究中心] 期刊論文 |
2001 |
Activation analysis of rapid thermally annealed Si and Mg co-implanted semi-insulating GaAs |
Lee,CC; Wu,LW; Chi,GC |
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[光電科學研究中心] 期刊論文 |
2001 |
Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition |
Wen,TC; Lee,WI; Sheu,JK; Chi,GC |
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[光電科學研究中心] 期刊論文 |
2001 |
Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices |
Sheu,JK; Kuo,CH; Chen,CC; Chi,GC; Jou,MJ |
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[光電科學研究中心] 期刊論文 |
2001 |
Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer |
Sheu,JK; Chi,GC; Jou,MJ |
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[光電科學研究中心] 期刊論文 |
2001 |
Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice |
Sheu,JK; Chi,GC; Jou,MJ |
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[光電科學研究中心] 期刊論文 |
2001 |
Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer |
Sheu,JK; Tsai,JM; Shei,SC; Lai,WC; Wen,TC; Kou,CH; Su,YK; Chang,SJ; Chi,GC |
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[光電科學研究中心] 期刊論文 |
2000 |
Microstructural evolution in a multiple composite layer of GaN on sapphire by organometallic vapor phase epitaxy |
Yang,CC; Wu,MC; Lee,CH; Chi,GC |
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[光電科學研究中心] 期刊論文 |
2000 |
Optical properties in InGaN/GaN multiple quantum wells and blue LEDs |
Su,YK; Chi,GC; Sheu,JK |
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[光電科學研究中心] 期刊論文 |
2000 |
The doping process of p-type GaN films |
Chi,GC; Kuo,CH; Sheu,JK; Pan,CJ |
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[光電科學研究中心] 期刊論文 |
1999 |
Effects of multiple buffer layers on structural electronic properties of GaN growth by atmospheric pressure Organometallic Vapor Phase Epitaxy |
Yang,CC; Wu,MC; Chang,CA; Chi,GC |
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[光電科學研究所] 期刊論文 |
2009 |
Characterization of ZnO nanowires grown on Si (100) with and without Au catalyst |
Chen,JY; Pan,CJ; Tsao,FC; Kuo,CH; Chi,GC; Pong,BJ; Chang,CY; Norton,DP; Pearton,SJ |
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[光電科學研究所] 期刊論文 |
2009 |
Dislocation reduction in GaN with double MgxNy/AlN buffer layer by metal organic chemical vapor deposition |
Kuo,CW; Fu,YK; Kuo,CH; Chang,LC; Tun,CJ; Pan,CJ; Chi,GC |
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[光電科學研究所] 期刊論文 |
2009 |
Growth and characterization of c-plane AlGaN on gamma-LiAlO2 |
Tun,CJ; Kuo,CH; Fu,YK; Kuo,CW; Chou,MMC; Chi,GC |
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[光電科學研究所] 期刊論文 |
2009 |
Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls |
Kuo,CW; Lee,YC; Fu,YK; Tsai,CH; Wu,ML; Chi,GC; Kuo,CH; Tun,CJ |
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[光電科學與工程學系] 期刊論文 |
2010 |
Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step |
Kuo,CH; Fu,YK; Chi,GC; Chang,SJ |
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[光電科學與工程學系] 期刊論文 |
2010 |
Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template |
Kuo,CH; Chang,LC; Kuo,CW; Chi,GC |
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[光電科學與工程學系] 期刊論文 |
2004 |
Gratings in GaN membranes |
Chen,CC; Hou,CH; Sheu,JK; Chang,JY; Li,MH; Chi,GC; Wu,C |
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[光電科學與工程學系] 期刊論文 |
2004 |
Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer |
Lee,ML; Sheu,JK; Su,YK; Chang,SJ; Lai,WC; Chi,GC |
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[光電科學與工程學系] 期刊論文 |
2004 |
Si diffusion in p-GaN |
Pan,CJ; Chi,GC; Pong,BJ; Sheu,JK; Chen,JY |
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[光電科學與工程學系] 期刊論文 |
2004 |
Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor deposition |
Tu,RC; Tun,CJ; Chuo,CC; Lee,BC; Tsai,CE; Wang,TC; Chi,J; Lee,CP; Chi,GC |
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[光電科學與工程學系] 期刊論文 |
2003 |
Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry |
Ting,YS; Chen,CC; Sheu,JK; Chi,GC; Hsu,JT |
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[光電科學與工程學系] 期刊論文 |
2003 |
Gallium nitride diffractive microlenses using in ultraviolet micro-optics system |
Hou,CH; Li,MH; Chen,CC; Chang,JY; Sheu,JK; Chi,GC; Wu,C; Cheng,WT; Yeh,JH |
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[光電科學與工程學系] 期刊論文 |
2003 |
Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer |
Tu,RC; Tun,CJ; Shen,JK; Kuo,WH; Wang,TC; Tsai,CE; Hsu,JT; Chi,J; Chi,GC |
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[光電科學與工程學系] 期刊論文 |
2003 |
Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers |
Tu,RC; Chuo,CC; Pan,SM; Fan,YM; Tsai,CE; Wang,TC; Tun,CJ; Chi,GC; Lee,BC; Lee,CP |
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[光電科學與工程學系] 期刊論文 |
2003 |
Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers |
Tu,RC; Tun,CJ; Pan,SM; Liu,HP; Tsai,CE; Sheu,JK; Chuo,CC; Wang,TC; Chi,GC; Chen,IG |
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[光電科學與工程學系] 期刊論文 |
2003 |
Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature |
Tu,RC; Tun,CJ; Pan,SM; Chuo,CC; Sheu,JK; Tsai,CE; Wang,TC; Chi,GC |
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[光電科學與工程學系] 期刊論文 |
2003 |
Silicon-based transmissive diffractive optical element |
Lee,CC; Chang,YC; Wang,CM; Chang,JY; Chi,GC |
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[光電科學與工程學系] 期刊論文 |
2003 |
Thermal annealing effects on the optical gain of InGaN/GaN quantum well structures |
Chen,CC; Hsueh,TH; Ting,YS; Chi,GC; Chang,CA; Wang,SC |
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[光電科學與工程學系] 期刊論文 |
2002 |
Design of GaN convex diffractive microlenses |
Chen,CC; Chang,JY; Chi,GC |
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[光電科學與工程學系] 期刊論文 |
2001 |
Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices |
Kuo,CH; Sheu,JK; Chi,GC; Huang,YL; Yeh,TW |
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[物理研究所] 期刊論文 |
2009 |
Density-dependent energy relaxation of hot electrons in InN epilayers |
Yang,MD; Liu,YW; Shen,JL; Chen,CW; Chi,GC; Lin,TY; Chou,WC; Lo,MH; Kuo,HC; Lu,TC |
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[物理研究所] 期刊論文 |
2009 |
Minipressure sensor using AlGaN/GaN high electron mobility transistors |
Hung,SC; Chou,BH; Chang,CY; Lo,CF; Chen,KH; Wang,YL; Pearton,SJ; Dabiran,A; Chow,PP; Chi,GC; Ren,F |
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[物理研究所] 期刊論文 |
2009 |
Morphology and optical properties of zinc oxide thin films grown on Si (100) by metal-organic chemical vapor deposition |
Lan,SM; Uen,WY; Chan,CE; Chang,KJ; Hung,SC; Li,ZY; Yang,TN; Chiang,CC; Huang,PJ; Yang,MD; Chi,GC; Chang,CY |
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[物理研究所] 期刊論文 |
2009 |
Surface morphology and optical properties of ZnO epilayers grown on Si(111) by metal organic chemical vapor deposition |
Hung,SC; Huang,PJ; Chan,CE; Uen,WY; Ren,F; Pearton,SJ; Yang,TN; Chiang,CC; Lan,SM; Chi,GC |
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[物理研究所] 期刊論文 |
2006 |
Effects of thermal annealing on Al-doped ZnO films deposited on p-type gallium nitride |
Tun,CJ; Sheu,JK; Lee,ML; Hu,CC; Hsieh,CK; Chi,GC |
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[物理研究所] 期刊論文 |
2005 |
Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors |
Kao,CJ; Chen,MC; Tun,CJ; Chi,GC; Sheu,JK; Lai,WC; Lee,ML; Ren,F; Pearton,SJ |
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[物理研究所] 期刊論文 |
2005 |
Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition |
Kao,CJ; Kwon,YW; Heo,YW; Norton,DP; Pearton,SJ; Ren,F; Chi,GC |
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[物理研究所] 期刊論文 |
2005 |
Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metallorganic vapor phase |
Sheu,JK; Chen,SS; Lee,ML; Lai,WC; Chi,GC |
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[物理研究所] 期刊論文 |
2005 |
Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes |
Yang,HS; Han,SY; Heo,YW; Baik,KH; Norton,DP; Pearton,SJ; Ren,F; Osinsky,A; Dong,JW; Hertog,B; Dabiran,AM; Chow,PP; Chernyak,L; Steiner,T; Kao,CJ; Chi,GC |
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[物理研究所] 期刊論文 |
2005 |
Improved thermal stability CrB2 contacts on ZnO |
Ip,K; Khanna,R; Norton,DP; Pearton,SJ; Ren,F; Kravchenko,I; Kao,CJ; Chi,GC |
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[物理研究所] 期刊論文 |
2005 |
Rectifying characteristics of WSi0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature |
Sheu,JK; Lee,ML; Lai,WC; Tseng,HC; Chi,GC |
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[物理研究所] 期刊論文 |
2005 |
Thermal stability of W2B and W2B5 contacts on ZnO |
Ip,K; Khanna,R; Norton,DP; Pearton,SJ; Ren,F; Kravchenko,I; Kao,CJ; Chi,GC |
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[物理研究所] 期刊論文 |
2005 |
Transport properties of InN nanowires |
Chang,CY; Chi,GC; Wang,WM; Chen,LC; Chen,KH; Ren,F; Pearton,SJ |
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[物理研究所] 期刊論文 |
2005 |
W2B-based ohmic contacts to n-GaN |
Khanna,R; Pearton,SJ; Ren,F; Kravchenko,I; Kao,CJ; Chi,GC |
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[物理研究所] 期刊論文 |
2005 |
W2B-based rectifying contacts to n-GaN |
Khanna,R; Pearton,SJ; Ren,F; Kravchenko,I; Kao,CJ; Chi,GC |
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[物理研究所] 期刊論文 |
2004 |
Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors |
Kao,CJ; Sheu,JK; Lai,WC; Lee,ML; Chen,MC; Chi,GC |
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[物理研究所] 期刊論文 |
2003 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer |
Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,SJ; Kao,CJ; Tun,CJ; Chen,MG; Chang,WH; Chi,GC; Tsai,JM |
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[物理研究所] 期刊論文 |
2003 |
GaN diffractive microlenses fabricated with gray-level mask |
Chen,CC; Li,MH; Chang,CY; Sheu,JK; Chi,GC; Cheng,WT; Yeh,JH; Chang,JY; Ito,T |
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[物理研究所] 期刊論文 |
2003 |
GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts |
Chang,SJ; Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,CS; Kao,CJ; Chi,GC; Tsai,JA |
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[物理研究所] 期刊論文 |
2003 |
Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer |
Sheu,JK; Kao,CJ; Lee,ML; Lai,WC; Yeh,LS; Chi,GC; Chang,SJ; Su,YK; Tsa,JM |
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[物理研究所] 期刊論文 |
2003 |
Simplified sedimentation process for 3D photonic thick layers/bulk crystals with a stop-band in the visible range |
Bresson,F; Chen,CC; Chi,GC; Chen,YW |
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[物理研究所] 期刊論文 |
2003 |
Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure |
Yeh,LS; Lee,ML; Sheu,JK; Chen,MG; Kao,CJ; Chi,GC; Chang,SJ; Su,YK |
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[物理研究所] 期刊論文 |
2002 |
GaN p-n junction diode formed by Si ion implantation into p-GaN |
Lee,ML; Sheu,JK; Yeh,LS; Tsai,MS; Kao,CJ; Tun,CJ; Chang,SJ; Chi,GC |
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[物理研究所] 期刊論文 |
2002 |
High brightness green light emitting diodes with charge asymmetric resonance tunneling structure |
Chen,CH; Su,YK; Chang,SJ; Chi,GC; Sheu,JK; Chen,JF; Liu,CH; Liaw,YH |
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[物理研究所] 期刊論文 |
2002 |
High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures |
Chen,CH; Chang,SJ; Su,YK; Chi,GC; Sheu,JK; Chen,JF |
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[物理研究所] 期刊論文 |
2002 |
Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN |
Sheu,JK; Lee,ML; Yeh,LS; Kao,CJ; Tun,CJ; Chen,MG; Chi,GC; Chang,SJ; Su,YK; Lee,CT |
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[物理研究所] 期刊論文 |
2001 |
Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures |
Chen,CC; Hsieh,KL; Sheu,JK; Chi,GC; Jou,MJ; Lee,CH; Lin,MZ |
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[物理研究所] 期刊論文 |
2001 |
Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well |
Chen,CC; Hsueh,TH; Ting,YS; Chi,GC; Chang,CA |
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[物理研究所] 期刊論文 |
2001 |
GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts |
Chen,CH; Chang,SJ; Su,YK; Chi,GC; Chi,JY; Chang,CA; Sheu,JK; Chen,JF |
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[物理研究所] 期刊論文 |
2001 |
Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching |
Chen,CHS; Chang,SJ; Su,YKI; Chi,GC; Sheu,JK; Lin,IC |
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[物理研究所] 期刊論文 |
2000 |
Improved contact performance of GaN film using Si diffusion |
Lin,CF; Cheng,HC; Chi,GC; Bu,CJ; Feng,MS |
|
[物理研究所] 期刊論文 |
2000 |
Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces |
Sheu,JK; Su,YK; Chi,GC; Jou,MJ; Liu,CC; Chang,CM; Hung,WC; Bow,JS; Yu,YC |
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[物理研究所] 期刊論文 |
2000 |
Luminescence of an InGaN/GaN multiple quantum well light-emitting diode |
Sheu,JK; Chi,GC; Su,YK; Liu,CC; Chang,CM; Hung,WC; Jou,MJ |
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[物理研究所] 期刊論文 |
2000 |
Properties of Mg activation in thermally treated GaN : Mg films |
Lin,CF; Cheng,HC; Chang,CC; Chi,GC |
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[物理研究所] 期刊論文 |
2000 |
Temperature dependent performance of GaN Schottky diode rectifiers |
Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Lee,CM; Chuo,CC; Chyi,JI; Chi,GC; Han,J; Chu,SNG; Wilson,RG |
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[物理研究所] 期刊論文 |
2000 |
W ohmic contact for highly doped n-type GaN films |
Lin,CF; Cheng,HC; Chi,GC |
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[物理研究所] 期刊論文 |
1999 |
Effectiveness of multiple-pair buffer layer to improve the GaN layers grown by metalorganic chemical vapor deposition |
Yang,CC; Wu,MC; Chang,CA; Chi,GC |
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[物理研究所] 期刊論文 |
1999 |
Effects of H-2/NH3 flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD |
Yang,CC; Koh,PL; Wu,MC; Lee,CH; Chi,GC |
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[物理研究所] 期刊論文 |
1999 |
Electrical and optical changes in the near surface of reactively ion etched n-GaN |
Chen,JY; Pan,CJ; Chi,GC |
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[物理研究所] 期刊論文 |
1999 |
Growth and characterization of GaN by atomsphere pressure metalorganic chemical-vapor deposition with a novel separate-flow reactor |
Yang,CC; Huang,CK; Chi,GC; Wu,MC |
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[物理研究所] 期刊論文 |
1999 |
High-transparency Ni/Au ohmic contact to p-type GaN |
Sheu,JK; Su,YK; Chi,GC; Koh,PL; Jou,MJ; Chang,CM; Liu,CC; Hung,WC |
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[物理研究所] 期刊論文 |
1999 |
Improvement of GaN layer quality by using the bulk-GaN buffer structure grown by metalorganic chemical vapor deposition |
Yang,CC; Wu,MC; Chi,GC |
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[物理研究所] 期刊論文 |
1999 |
Indium tin oxide ohmic contact to highly doped n-GaN |
Sheu,JK; Su,YK; Chi,GC; Jou,MJ; Liu,CC; Chang,CM |
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[物理研究所] 期刊論文 |
1999 |
Inductively coupled plasma etching of GaN using Cl-2/Ar and Cl-2/N-2 gases |
Sheu,JK; Su,YK; Chi,GC; Jou,MJ; Liu,CC; Chang,CM; Hung,WC |
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[物理研究所] 期刊論文 |
1999 |
The doping of GaN with Mg diffusion |
Pan,CJ; Chi,GC |
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[物理研究所] 期刊論文 |
1999 |
The improvement of GaN epitaxial layer quality by the design of reactor chamber spacing |
Yang,CC; Chi,GC; Huang,CK; Wu,MC |
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[物理研究所] 期刊論文 |
1999 |
X-ray diffraction characterization of epitaxial zinc-blende GaN films on a miscut GaAs(001) substrates using the hydride vapor-phase epitaxy method |
Yang,CC; Wu,MC; Lee,CH; Chi,GC |
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[物理研究所] 期刊論文 |
1998 |
Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN |
Sheu,JK; Su,YK; Chi,GC; Jou,MJ; Chang,CM |
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[物理研究所] 期刊論文 |
1998 |
Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers |
Sheu,JK; Su,YK; Chang,SJ; Chi,GC; Lin,KB; Liu,CC; Chiu,CC |
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[物理研究所] 期刊論文 |
1998 |
Investigation of wafer-bonded (AlxGa1-x)(0.5)In0.5P/GaP light-emitting diodes |
Sheu,JK; Su,YK; Chang,SJ; Jou,MJ; Liu,CC; Chi,GC |
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[物理研究所] 期刊論文 |
1998 |
Non-optimal rates of ergodic limits and approximate solutions |
Pong,BJ; Pan,CJ; Teng,YC; Chi,GC; Li,WH; Lee,KC; Lee,CH |
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[物理研究所] 期刊論文 |
1998 |
Photoluminescence spectroscopy of Mg-doped GaN |
Sheu,JK; Su,YK; Chi,GC; Pong,BJ; Chen,CY; Huang,CN; Chen,WC |
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[物理研究所] 期刊論文 |
1998 |
The effect of thermal annealing on the Ni/Au contact of p-type GaN |
Sheu,JK; Su,YK; Chi,GC; Chen,WC; Chen,CY; Huang,CN; Hong,JM; Yu,YC; Wang,CW; Lin,EK |
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[物理研究所] 期刊論文 |
1998 |
Two-dimensional electron gas and persistent photoconductivity in AlxGa1-xN/GaN heterostructures |
Lin,TY; Chen,HM; Tsai,MS; Chen,YF; Fang,FF; Lin,CF; Chi,GC |
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[物理研究所] 期刊論文 |
1997 |
Characterization of GaN epitaxial layers on SiC substrates with AlxGa1-xN buffer layers |
Lin,CF; Cheng,HC; Feng,MS; Chi,GC |
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[物理研究所] 期刊論文 |
1997 |
Growth and characterizations of GaN on SiC substrates with buffer layers |
Lin,CF; Cheng,HC; Chi,GC; Feng,MS; Guo,JD; Hong,JMH; Chen,CY |
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[物理研究所] 期刊論文 |
1997 |
Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures |
Lin,CF; Cheng,HC; Huang,JA; Feng,MS; Guo,JD; Chi,GC |
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[物理研究所] 期刊論文 |
1996 |
A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films |
Guo,JD; Lin,CI; Feng,MS; Pan,FM; Chi,GC; Lee,CT |
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[物理研究所] 期刊論文 |
1996 |
AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology |
Chang,SJ; Sheu,JK; Su,YK; Jou,MJ; Chi,GC |
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[物理研究所] 期刊論文 |
1996 |
The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer |
Lin,CF; Chi,GC; Feng,MS; Guo,JD; Tsang,JS; Hong,JMH |
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[物理研究所] 期刊論文 |
1996 |
X-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers |
Lee,CH; Chi,GC; Lin,CF; Feng,MS; Guo,JD |
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[物理研究所] 期刊論文 |
1995 |
Top sawtooth grating for GaAs/AlGaAs quantum well IR detectors |
Chi,GC; Juang,C |
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[物理學系] 期刊論文 |
2011 |
Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers |
Sheu,JK; Tu,SJ; Lee,ML; Yeh,YH; Yang,CC; Huang,FW; Lai,WC; Chen,CW; Chi,GC |
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[物理學系] 期刊論文 |
2011 |
High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature |
Hung,SC; Chen,CW; Shieh,CY; Chi,GC; Fan,R; Pearton,SJ |
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[物理學系] 期刊論文 |
2011 |
Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure |
Chen,CW; Hung,SC; Lee,CH; Tun,CJ; Kuo,CH; Yang,MD; Yeh,CW; Wu,CH; Chi,GC |
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[物理學系] 期刊論文 |
2011 |
Oxygen sensors made by monolayer graphene under room temperature |
Chen,CW; Hung,SC; Yang,MD; Yeh,CW; Wu,CH; Chi,GC; Ren,F; Pearton,SJ |
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[物理學系] 期刊論文 |
2010 |
Catalyst-free ZnO nanowires grown on a-plane GaN |
Chen,CW; Pan,CJ; Tsao,FC; Liu,YL; Kuo,CW; Kuo,CH; Chi,GC; Chen,PH; Lai,WC; Hsueh,TH; Tun,CJ; Chang,CY; Pearton,SJ; Ren,F |
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[物理學系] 期刊論文 |
2010 |
Determination of the microstructure of Eu-treated ZnO nanowires by x-ray absorption |
Huang,WL; Labis,J; Ray,SC; Liang,YR; Pao,CW; Tsai,HM; Du,CH; Pong,WF; Chiou,JW; Tsai,MH; Lin,HJ; Lee,JF; Chou,YT; Shen,JL; Chen,CW; Chi,GC |
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[電機工程研究所] 期刊論文 |
2003 |
Diffusion mechanism and photoluminescence of erbium in GaN |
Ting,YS; Chen,CC; Lee,CC; Chi,GC; Chini,TK; Chakraborty,P; Chuang,HW; Tsang,JS; Kuo,CT; Tsai,WC; Chen,SH; Chyi,JI |
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[電機工程研究所] 期刊論文 |
2003 |
Er diffusion into gallium nitride |
Chen,CC; Ting,YS; Lee,CC; Chi,GC; Chakraborty,P; Chini,T; Chuang,HW; Tsang,JS; Kuo,CT; Tsai,WC; Chen,SH; Chyi,JI |
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[電機工程研究所] 期刊論文 |
2002 |
Thermal annealing effects on stimulated emission of high-indium-content InGaN/GaN single quantum well structure |
Chen,CC; Hsieh,KL; Chi,GC; Chuo,CC; Chyi,JI; Chang,CA |
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[電機工程研究所] 期刊論文 |
2001 |
Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures |
Chen,CC; Hsieh,KL; Chi,GC; Chuo,CC; Chyi,JI; Chang,CA |
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[電機工程研究所] 期刊論文 |
2001 |
Improvement of diodes performance with a multiple-pair buffer layer by MOCVD |
Yang,CC; Wu,MC; Chi,GC; Chuo,CC; Chyi,JI |
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[電機工程研究所] 期刊論文 |
2000 |
Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer |
Yang,CC; Wu,MC; Chuo,CC; Chyi,JI; Lin,CF; Chi,GC |
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[電機工程研究所] 期刊論文 |
2000 |
Processing and device performance of GaN power rectifiers |
Zhang,AP; Dang,GT; Cao,XA; Cho,H; Ren,F; Han,J; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chi,GC; Chu,SNG; Wilson,RG; Pearton,SJ |
|
[電機工程研究所] 期刊論文 |
2000 |
Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures |
Chen,CC; Chuang,HW; Chi,GC; Chuo,CC; Chyi,JI |
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[電機工程研究所] 期刊論文 |
1999 |
Growth and device performance of GaN Schottky rectifiers |
Chyi,JI; Lee,CM; Chuo,CC; Chi,GC; Dang,GT; Zhang,AP; Ren,F; Cao,XA; Pearton,SJ; Chu,SNG; Wilson,RG |
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