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    类别 日期 题名 作者 档案
    [光電科學研究中心] 期刊論文 2005 Generation of frequency-tunable nanoacoustic waves by optical coherent control Yu,CT; Lin,KH; Hsieh,CL; Pan,CC; Chyi,JI; Sun,CK
    [光電科學研究中心] 期刊論文 2004 Reflection property of nano-acoustic wave at the air/GaN interface Hsieh,CL; Lin,KH; Wu,SB; Pan,CC; Chyi,JI; Sun,CK
    [光電科學研究中心] 期刊論文 1995 PERFORMANCE ENHANCEMENT USING WSIX/ITO ELECTRODES IN INGAAS/INALAS MSM PHOTODETECTORS CHU,CC; CHAN,YJ; YUANG,RH; CHYI,JI; LEE,CT
    [光電科學與工程學系] 期刊論文 2001 Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chou,CC; Lee,CM
    [化學工程與材料工程研究所] 期刊論文 2002 Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers Johnson,JW; Zhang,AP; Luo,WB; Ren,F; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI
    [化學工程與材料工程研究所] 期刊論文 1997 Porous silicon light-emitting diode with tunable color Chen,YA; Chen,BF; Tsay,WC; Laih,LH; Chang,MN; Chyi,JI; Hong,JW; Chang,CY
    [物理學系] 期刊論文 2011 Imaging resonant modes in photonic crystal nanocavity by atomic force microscope nano-oxidation Chen,WY; Chen,MJ; Cheng,CC; Hsu,TM; Wang,CJ; Chyi,JI
    [物理學系] 期刊論文 2010 Coherence properties of InAs quantum dot emissions from quasi-L2 photonic crystal nanocavities Chen,WY; Yang,FS; Chang,HS; Cheng,CC; Wang,CJ; Chiu,PC; Chyi,JI; Hsu,TM
    [物理學系] 期刊論文 2010 Photoluminescence of self-assembled InAs quantum dots embedded in photonic crystal nanocavities with shifted air holes Chen,WY; Chang,HS; Lin,CH; Chiu,PC; Wang,CJ; Tseng,YC; Chyi,JI; Hsu,TM
    [物理研究所] 期刊論文 2009 Origins of nonzero multiple photon emission probability from single quantum dots embedded in photonic crystal nanocavities Chang,HS; Chen,WY; Hsu,TM; Hsieh,TP; Chyi,JI; Chang,WH
    [物理研究所] 期刊論文 2000 Temperature dependent performance of GaN Schottky diode rectifiers Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Lee,CM; Chuo,CC; Chyi,JI; Chi,GC; Han,J; Chu,SNG; Wilson,RG
    [物理研究所] 期刊論文 1999 Electron-filling modulation reflectance in charged self-assembled InxGa1-xAs quantum dots Hsu,TM; Chang,WH; Tsai,KF; Chyi,JI; Yeh,NT; Nee,TE
    [物理研究所] 期刊論文 1999 Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots Chang,WH; Hsu,TM; Tsai,KF; Nee,TE; Chyi,JI; Yeh,NT
    [物理研究所] 期刊論文 1998 The Fermi level of annealed low-temperature GaAs on Si-delta-doped GaAs grown by molecular beam epitaxy Lee,WC; Hsu,TM; Wang,SC; Chang,MN; Chyi,JI
    [物理研究所] 期刊論文 1996 Characterization of low temperature GaAs grown by molecular beam epitaxy Lee,WC; Hsu,TM; Chyi,JI; Lee,GS; Li,WH; Lee,KC
    [環境工程研究所 ] 期刊論文 1997 Reduced impact ionization by using In-0.53(AlxGa1-x)(0.47)As (x=0.1,0.2) channel in InP HEMTs Lai,LS; Chan,YJ; Pan,JW; Sheih,JL; Chyi,JI
    [電機工程學系] 期刊論文 2011 Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots Hsu,WT; Liao,YA; Hsu,FC; Chiu,PC; Chyi,JI; Chang,WH
    [電機工程學系] 期刊論文 2011 Efficiency Enhancement of InGaN LEDs With an n-Type AlGaN/GaN/InGaN Current Spreading Layer Liu,HH; Chen,PR; Lee,GY; Chyi,JI
    [電機工程學系] 期刊論文 2011 Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors Lo,CF; Ren,F; Chang,CY; Pearton,SJ; Chen,SH; Chang,CM; Wang,SY; Chyi,JI; Kravchenko,II
    [電機工程學系] 期刊論文 2011 High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers Liu,WS; Wu,HM; Liao,YA; Chyi,JI; Chen,WY; Hsu,TM
    [電機工程學系] 期刊論文 2011 High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer Lee,GY; Liu,HH; Chyi,JI
    [電機工程學系] 期刊論文 2011 Optical characterization of isoelectronic ZnSe(1-x)O(x) semiconductors Lin,YC; Chung,HL; Ku,JT; Chen,CY; Chien,KF; Fan,WC; Lee,L; Chyi,JI; Chou,WC; Chang,WH; Chen,WK
    [電機工程學系] 期刊論文 2011 Optical properties of InGaN/GaN multiple quantum wells with trimethylindium treatment during growth interruption Feng,SW; Tsai,CY; Wang,HC; Lin,HC; Chyi,JI
    [電機工程學系] 期刊論文 2011 Roles of Dislocation Density to the Scattering of Nano-acoustic Waves in GaN Liu,TM; Sun,SZ; Chang,CF; Chen,GT; Pan,CC; Chyi,JI; Sun,CK
    [電機工程學系] 期刊論文 2011 The impact of trimethylindium treatment time during growth interruption on the carrier dynamics of InGaN/GaN multiple quantum wells Feng,SW; Lin,HC; Chyi,JI; Tsai,CY; Huang,CJ; Wang,HC; Yang,FW; Lin,YS
    [電機工程學系] 期刊論文 2010 Carrier dynamics in isoelectronic ZnSe(1-x)O(x) semiconductors Lin,YC; Chung,HL; Chou,WC; Chen,WK; Chang,WH; Chen,CY; Chyi,JI
    [電機工程學系] 期刊論文 2010 Challenges and Opportunities in GaN and ZnO Devices and Materials Morkoc,H; Chyi,JI; Krost,A; Nanishi,Y; Silversmith,DJ
    [電機工程學系] 期刊論文 2010 Characterization and Comparison of GaAs/AlGaAs Uni-Traveling Carrier and Separated-Transport-Recombination Photodiode Based High-Power Sub-THz Photonic Transmitters Li,YT; Shi,JW; Huang,CY; Chen,NW; Chen,SH; Chyi,JI; Wang,YC; Yang,CS; Pan,CL
    [電機工程學系] 期刊論文 2010 DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors Chen,SH; Chang,CM; Chiang,PY; Wang,SY; Chang,WH; Chyi,JI
    [電機工程學系] 期刊論文 2010 E-beam-evaporated Al(2)O(3) for InAs/AlSb metal-oxide-semiconductor HEMT development Lin,HK; Fan,DW; Lin,YC; Chiu,PC; Chien,CY; Li,PW; Chyi,JI; Ko,CH; Kuan,TM; Hsieh,MK; Lee,WC; Wann,CH
    [電機工程學系] 期刊論文 2010 Effects of Lens Shape on GaN Grown on Microlens Patterned Sapphire Substrates by Metallorganic Chemical Vapor Deposition Lin,HC; Liu,HH; Lee,GY; Chyi,JI; Lu,CM; Chao,CW; Wang,TC; Chang,CJ; Chi,SWS
    [電機工程學系] 期刊論文 2010 Extremely High Saturation Current-Bandwidth Product Performance of a Near-Ballistic Uni-Traveling-Carrier Photodiode With a Flip-Chip Bonding Structure Shi,JW; Kuo,FM; Wu,CJ; Chang,CL; Liu,CY; Chen,CY; Chyi,JI
    [電機工程學系] 期刊論文 2010 Fabrication study of AlN solar-blind (< 280 nm) MSM photodetectors grown by low-temperature deposition Chen,MR; Chang,SH; Chen,TC; Hsu,CH; Kao,HL; Chyi,JI
    [電機工程學系] 期刊論文 2010 Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors Lin,HK; Lin,YC; Huang,FH; Fan,TW; Chiu,PC; Chyi,JI; Ko,CH; Kuan,TM; Hsieh,MK; Lee,WC; Wann,CH
    [電機工程學系] 期刊論文 2010 Low Surface Recombination in InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors Wang,SY; Chiang,PY; Chang,CM; Chen,SH; Chyi,JI
    [電機工程學系] 期刊論文 2010 Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode Lin,SY; Tseng,CC; Lin,WH; Mai,SC; Wu,SY; Chen,SH; Chyi,JI
    [電機工程學系] 期刊論文 2010 Site-controlled self-assembled InAs quantum dots grown on GaAs substrates Lin,SY; Tseng,CC; Chung,TH; Liao,WH; Chen,SH; Chyi,JI
    [電機工程學系] 期刊論文 2010 Spectroscopic ellipsometric analysis of ZnSe(1-x)O(x) layers with different O compositions Uma,K; Chen,CY; Chao,CK; Wu,CH; Chyi,JI
    [電機工程學系] 期刊論文 2010 Tailoring of the Wave Function Overlaps InAs/GaAs(1-x)Sb(x) Type-II Quantum Dots Hsu,WT; Liao,YA; Lu,SK; Cheng,SJ; Chiu,PC; Chyi,JI; Chang,WH
    [電機工程學系] 期刊論文 2010 Temperature-Dependent Characteristics of a GaN/InGaN/ZnO Heterojunction Bipolar Transistor Hsueh,KP; Pan,CT; Li,CT; Lin,HC; Hsin,YM; Chyi,JI
    [電機工程研究所] 期刊論文 2006 Frequency tunability of terahertz photonic transmitters Kao,TF; Chang,HH; Chen,LJ; Lu,JY; Liu,AS; Yu,YC; Wu,RB; Liu,WS; Chyi,JI; Sun,CK
    [電機工程研究所] 期刊論文 2006 Growth of low density InGaAs quantum dots for single photon sources by metal-organic chemical vapour deposition Hsieh,TP; Chang,HS; Chen,WY; Chang,WH; Hsu,TM; Yeh,NT; Ho,WJ; Chiu,PC; Chyi,JI
    [電機工程研究所] 期刊論文 2006 Pinholelike defects in multistack 1.3 mu m InAs quantum dot laser Liu,WS; Chang,HL; Liu,YS; Chyi,JI
    [電機工程研究所] 期刊論文 2006 Si-diffused GaN for enhancernent-mode GaN MOSFET on Si applications Jang,S; Ren,F; Pearton,SJ; Gila,BP; Hlad,M; Abernathy,CR; Yang,H; Pan,CJ; Chyi,JI; Bove,P; Lahreche,H; Thuret,J
    [電機工程研究所] 期刊論文 2006 Thermal stability improvement by using Pd/NiO/Al/Ti/Au reflective ohmic contacts to p-GaN for flip-chip ultraviolet light-emitting diodes Pan,CC; Chen,GT; Hsu,WJ; Lin,CW; Chyi,JI
    [電機工程研究所] 期刊論文 2005 1.55 mu m emission from InAs quantum dots grown on GaAs Hsieh,TP; Chiu,PC; Chyi,JI; Yeh,NT; Ho,WJ; Chang,WH; Hsu,TM
    [電機工程研究所] 期刊論文 2005 A two-stack, multi-color In0.5Ga0.5As/GaAs and InAs/GaAs quantum dot infrared photodetector for long wavelength infrared detection Jiang,L; Li,SS; Liu,WS; Yeh,NT; Chyi,JI
    [電機工程研究所] 期刊論文 2005 Demonstration of a dual-depletion-region electroabsorption modulator at 1.55-mu m wavelength for high-speed and low-driving-voltage performance Shi,JW; Hsieh,CA; Shiao,AC; Wu,YS; Huang,RH; Chen,SH; Tsai,YT; Chyi,JI
    [電機工程研究所] 期刊論文 2005 Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection Chen,WM; Buyanova,IA; Nishibayashi,K; Kayanuma,K; Seo,K; Murayama,A; Oka,Y; Thaler,G; Frazier,R; Abernathy,CR; Ren,F; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI
    [電機工程研究所] 期刊論文 2005 Electroreflectance studies of InAs quantum dots with InxGa1-xAs capping layer grown by metalorganic chemical vapor deposition Chang,WH; Chen,HY; Chang,HS; Chen,WY; Hsu,TM; Hsieh,TP; Chyi,JI; Yeh,NT
    [電機工程研究所] 期刊論文 2005 Enhanced light emission from InAs quantum dots in single-defect photonic crystal microcavities at room temperature Chen,WY; Chang,WH; Chang,HS; Hsu,TM; Lee,CC; Chen,CC; Luan,PG; Chang,JY; Hsieh,TP; Chyi,JI
    [電機工程研究所] 期刊論文 2005 Improvement of mesa-sidewall leakage current using benzocyclobuten sidewall process in InGaAs/InP MSM photodetector Chiu,WY; Huang,FH; Wu,YS; Lin,DM; Chan,YJ; Chen,SH; Chyi,JI; Shi,JW
    [電機工程研究所] 期刊論文 2005 InGaAsN/GaAs quantum-well lasers using two-step and nitride passivation growth Chiu,PC; Yeh,NT; Hong,CC; Hsieh,TP; Tsai,YT; Ho,WJ; Chyi,JI
    [電機工程研究所] 期刊論文 2005 Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire Lin,HF; Wu,CT; Chien,WC; Chen,SW; Kao,HL; Chyi,JI; Chen,JS
    [電機工程研究所] 期刊論文 2005 Low resistance WSix-based ohmic contacts on n-type GaN Pan,CC; Chen,MS; Lee,CM; Chyi,JI
    [電機工程研究所] 期刊論文 2005 Optical control of the exciton charge states of single quantum dots via impurity levels Chang,WH; Chang,HS; Chen,WY; Hsu,TM; Hsieh,TP; Chyi,JI; Yeh,NT
    [電機工程研究所] 期刊論文 2005 Optical emission from individual InGaAs quantum dots in single-defect photonic crystal nanocavity Chang,WH; Chen,WY; Chang,HS; Hsu,TM; Hsieh,TP; Chyi,JI
    [電機工程研究所] 期刊論文 2005 Optical piezoelectric transducer for nano-ultrasonics Lin,KH; Chern,GW; Yu,CT; Liu,TM; Pan,CC; Chen,GT; Chyi,JI; Huang,SW; Li,PC; Sun,CK
    [電機工程研究所] 期刊論文 2005 Optical properties of InAs quantum dots with InAlAs/InGaAs composite matrix Liu,WS; Chyi,JI
    [電機工程研究所] 期刊論文 2005 Performance enhancement by using the n(+)-GaN cap layer and gate recess technology on the AlGaN/GaN HEMTs fabrication. Wang,WK; Lin,PC; Lin,CH; Lin,CK; Chan,YJ; Chen,GT; Chyi,JI
    [電機工程研究所] 期刊論文 2005 Performance enhancement by using the n(+)-GaN cap layer and gate recess technology on the AlGaN-GaNHEMT fabrication Wang,WK; Lin,PC; Lin,CH; Lin,CK; Chan,YJ; Chen,GT; Chyi,JI
    [電機工程研究所] 期刊論文 2005 Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors Chu,SNG; Ren,F; Pearton,SJ; Kang,BS; Kim,S; Gila,BP; Abernathy,CR; Chyi,JI; Johnson,WJ; Lin,J
    [電機工程研究所] 期刊論文 2005 Selective growth of InAs quantum dots on patterned GaAs Hsieh,TP; Chiu,PC; Liu,YC; Yeh,NT; Ho,WJ; Chyi,JI
    [電機工程研究所] 期刊論文 2005 Separated-transport-recombination p-i-n photodiode for high-speed and high-power performance Shi,JW; Hsu,HC; Huang,FH; Liu,WS; Chyi,JI; Lu,JY; Sun,CK; Pan,CL
    [電機工程研究所] 期刊論文 2005 Ultrafast carrier dynamics in an InGaN thin film Wang,HC; Lu,YC; Teng,CC; Chen,YS; Yang,CC; Ma,KJ; Pan,CC; Chyi,JI
    [電機工程研究所] 期刊論文 2004 1.3 mu m InAs/GaAs quantum dots directly capped with GaAs grown by metal-organic chemical vapor deposition Huang,KF; Hsieh,TP; Yeh,NT; Ho,WJ; Chyi,JI; Wu,MC
    [電機工程研究所] 期刊論文 2004 2.6 A, 0.69 MW cm(-2) single-chip bulk GaN p-i-n rectifier Irokawa,Y; Luo,B; Kang,BS; Kim,J; LaRoche,JR; Ren,F; Baik,KH; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ
    [電機工程研究所] 期刊論文 2004 AlGaN/GaN HEMT based liquid sensors Mehandru,R; Luo,B; Kang,BS; Kim,J; Ren,F; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI
    [電機工程研究所] 期刊論文 2004 DC characteristics of AlGaN/GaN heterostructure field-effect transistors on freestanding GaN substrates Irokawa,Y; Luo,B; Ren,F; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ; Pearton,SJ
    [電機工程研究所] 期刊論文 2004 Device saturation behavior of submillimeter-wave membrane photonic transmitters Tien,MC; Chang,HH; Lu,JY; Chen,LJ; Chen,SY; Wu,RB; Liu,WS; Chyi,JI; Sun,CK
    [電機工程研究所] 期刊論文 2004 Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Frazier,RM; Gila,BP; Abernathy,CR; Pearton,SJ; Buyanova,IA; Rudko,GY; Chen,WM; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM
    [電機工程研究所] 期刊論文 2004 Electroreflectance study on the polarization field in InGalInGaN multiple quantum wells Hsu,TM; Lai,CY; Chang,WH; Pan,CC; Chuo,CC; Chyi,JI
    [電機工程研究所] 期刊論文 2004 GalGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates LaRoche,JR; Luo,B; Ren,F; Baik,KH; Stodilka,D; Gila,B; Abernathy,CR; Pearton,SJ; Usikov,A; Tsvetkov,D; Soukhoveev,V; Gainer,G; Rechnikov,A; Dimitriev,V; Chen,GT; Pan,CC; Chyi,JI
    [電機工程研究所] 期刊論文 2004 High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes Chen,GT; Pan,CC; Fang,CS; Huang,TC; Chyi,JI; Chang,MN; Huang,SB; Hsu,JT
    [電機工程研究所] 期刊論文 2004 InGaN-GaN MQW LEDs with current blocking layer formed by selective activation. Lee,CM; Chuo,CC; Liu,YC; Chen,IL; Chyi,JI
    [電機工程研究所] 期刊論文 2004 Low damage, Cl-2-based gate recess etching for 0.3-mu m gate-length AlGaN/GaN HEMT fabrication Wang,WK; Li,YJ; Lin,CK; Chan,YJ; Chen,GT; Chyi,JI
    [電機工程研究所] 期刊論文 2004 Low-k BCB passivation on AlGaN-GaN HEMT fabrication Wang,WK; Lin,CH; Lin,PC; Lin,CK; Huang,FH; Chan,YJ; Chen,GT; Chyi,JI
    [電機工程研究所] 期刊論文 2004 Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes Pan,CC; Lee,CM; Liu,JW; Chen,GT; Chyi,JI
    [電機工程研究所] 期刊論文 2004 MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors Irokawa,Y; Nakano,Y; Ishiko,M; Kachi,T; Kim,J; Ren,F; Gila,BP; Onstine,AH; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI
    [電機工程研究所] 期刊論文 2004 Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions Cheng,YC; Lin,EC; Wu,CM; Yang,CC; Yang,JR; Rosenauer,A; Ma,KJ; Shi,SC; Chen,LC; Pan,CC; Chyi,JI
    [電機工程研究所] 期刊論文 2004 On the origin of spin loss in GaMnN/InGaN light-emitting diodes Buyanova,IA; Izadifard,M; Chen,WM; Kim,J; Ren,F; Thaler,G; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM
    [電機工程研究所] 期刊論文 2004 Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes Buyanova,IA; Izadifard,M; Storasta,L; Chen,WM; Kim,J; Ren,F; Thaler,G; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM
    [電機工程研究所] 期刊論文 2004 Reduction of surface-induced current collapse in AlGaN/GaN HFETs on freestanding GaN substrates Irokawa,Y; Luo,B; Ren,F; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ
    [電機工程研究所] 期刊論文 2004 Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates Kang,BS; Ren,F; Irokawa,Y; Baik,KW; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Ko,HJ; Lee,HY
    [電機工程研究所] 期刊論文 2004 The microwave power performance comparisons of AlxGa1-xAs/In0.15Ga0.85As (x=0.3, 0.5, 0.7, 1.0) doped-channel HFETs Chin,HC; Yang,SC; Chan,YJ; Chen,SH; Liu,WS; Chyi,JI
    [電機工程研究所] 期刊論文 2004 Lateral Schottky GaN rectifiers formed by Si+ ion implantation Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI
    [電機工程研究所] 期刊論文 2004 Si+ ion implanted MPS bulk GaN diodes Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS
    [電機工程研究所] 期刊論文 2003 Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI
    [電機工程研究所] 期刊論文 2003 Boundary effects on the optical properties of InGaN multiple quantum wells Peng,LH; Lai,CM; Shih,CW; Chuo,CC; Chyi,JI
    [電機工程研究所] 期刊論文 2003 Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Overberg,ME; Frazier,R; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM
    [電機工程研究所] 期刊論文 2003 Current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers Irokawa,Y; Luo,B; Kim,J; LaRoche,JR; Ren,F; Baik,KH; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ
    [電機工程研究所] 期刊論文 2003 Diffusion mechanism and photoluminescence of erbium in GaN Ting,YS; Chen,CC; Lee,CC; Chi,GC; Chini,TK; Chakraborty,P; Chuang,HW; Tsang,JS; Kuo,CT; Tsai,WC; Chen,SH; Chyi,JI
    [電機工程研究所] 期刊論文 2003 Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors Kang,BS; Kim,S; Kim,J; Ren,F; Baik,K; Pearton,SJ; Gila,BP; Abernathy,CR; Pan,CC; Chen,GT; Chyi,JI; Chandrasekaran,V; Sheplak,M; Nishida,T; Chu,SNG
    [電機工程研究所] 期刊論文 2003 Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Overberg,ME; Thaler,GT; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM
    [電機工程研究所] 期刊論文 2003 Er diffusion into gallium nitride Chen,CC; Ting,YS; Lee,CC; Chi,GC; Chakraborty,P; Chini,T; Chuang,HW; Tsang,JS; Kuo,CT; Tsai,WC; Chen,SH; Chyi,JI
    [電機工程研究所] 期刊論文 2003 High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer Lee,CM; Chuo,CC; Chen,IL; Chang,JC; Chyi,JI
    [電機工程研究所] 期刊論文 2003 In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K Jiang,L; Li,SS; Yeh,NT; Chyi,JI; Ross,CE; Jones,KS
    [電機工程研究所] 期刊論文 2003 Liquid phase deposited SiO2 on GaN Wu,HR; Lee,KW; Nian,TB; Chou,DW; Wu,JJH; Wang,YH; Houng,MP; Sze,PW; Su,YK; Chang,SJ; Ho,CH; Chiang,CI; Chern,YT; Juang,FS; Wen,TC; Lee,WI; Chyi,JI
    [電機工程研究所] 期刊論文 2003 Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures Cheng,YC; Tseng,CH; Hsu,C; Ma,KJ; Feng,SW; Lin,EC; Yang,CC; Chyi,JI
    [電機工程研究所] 期刊論文 2003 Response to &quot;Comment on 'AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy' &quot; [Appl. Phys. Lett. 83, 3626 (2003)] Kikuchi,A; Bannai,R; Kishino,K; Lee,CM; Chyi,JI
    [電機工程研究所] 期刊論文 2003 Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells Peng,LH; Shih,CW; Lai,CM; Chuo,CC; Chyi,JI
    [電機工程研究所] 期刊論文 2003 Transport in a gated Al0.18Ga0.82N/GaN electron system Juang,JR; Huang,TY; Chen,TM; Lin,MG; Kim,GH; Lee,Y; Liang,CT; Hang,DR; Chen,YF; Chyi,JI
    [電機工程研究所] 期刊論文 2003 Type-II Zn1-xMnxSe/ZnSe1-yTey quantum wells Yang,CS; Cheng,CC; Kuo,MC; Tseng,PY; Shen,JL; Lee,J; Chou,WC; Jeng,S; Lai,CY; Hsu,TM; Chyi,JI
    [電機工程研究所] 期刊論文 2003 X-ray scattering studies on InGaAs quantum dots Hsu,CH; Lee,HY; Hsieh,YW; Stetsko,YP; Tang,MT; Liang,KS; Yeh,NT; Chyi,JI; Noh,DY
    [電機工程研究所] 期刊論文 2003 Reactive ion etching of GaN/InGaN using BCl3 plasma Hong,HF; Chao,CK; Chyi,JI; Tzeng,YC
    [電機工程研究所] 期刊論文 2002 1.6 A GaN Schottky rectifiers on bulk GaN substrates Johnson,JW; Lou,B; Ren,F; Palmer,D; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI
    [電機工程研究所] 期刊論文 2002 AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy Kikuchi,A; Bannai,R; Kishino,K; Lee,CM; Chyi,JI
    [電機工程研究所] 期刊論文 2002 Carrier transfer effects and thermal activation behaviors in the photoluminescence of In(Ga)As self-assembled quantum dots Chang,WH; Hsu,TM; Yeh,NT; Chyi,JI
    [電機工程研究所] 期刊論文 2002 Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy Lai,CY; Hsu,TM; Chang,WH; Tseng,KU; Lee,CM; Chuo,CC; Chyi,JI
    [電機工程研究所] 期刊論文 2002 Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing Chuo,CC; Chang,MN; Pan,FM; Lee,CM; Chyi,JI
    [電機工程研究所] 期刊論文 2002 Hole emission processes in InAs/GaAs self-assembled quantum dots Chang,WH; Chen,WY; Hsu,TM; Yeh,NT; Chyi,JI
    [電機工程研究所] 期刊論文 2002 Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures Feng,SW; Cheng,YC; Chung,YY; Yang,CC; Lin,YS; Hsu,C; Ma,KJ; Chyi,JI
    [電機工程研究所] 期刊論文 2002 InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy Yeh,NT; Liu,WS; Chen,SH; Chiu,PC; Chyi,JI
    [電機工程研究所] 期刊論文 2002 Investigation of InAs/GaAs quantum-dot infrared photodetector with In0.5Ga0.5P dark current blocking layer Jiang,L; Li,SS; Yeh,NT; Chyi,JI; Tidrow,MZ
    [電機工程研究所] 期刊論文 2002 Localized and quantum-well state excitons in AlInGaN laser-diode structure Chuo,CC; Chen,GT; Lin,MI; Lee,CM; Chyi,JI
    [電機工程研究所] 期刊論文 2002 Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures Feng,SW; Cheng,YC; Chung,YY; Yang,CC; Mao,MH; Lin,YS; Ma,KJ; Chyi,JI
    [電機工程研究所] 期刊論文 2002 Phonon-replica transitions in InGaN/GaN quantum well structures Feng,SW; Tsai,CY; Cheng,YC; Liao,CC; Yang,CC; Lin,YS; Ma,KJ; Chyi,JI
    [電機工程研究所] 期刊論文 2002 Scanning electron filling modulation reflectance of charged InGaAs self-assembled quantum dot Hsu,TM; Chang,WH; Lai,CY; Yeh,NT; Chyi,JI
    [電機工程研究所] 期刊論文 2002 Single-crystal GaN/Gd2O3/GaN heterostructure Hong,M; Kwo,J; Chu,SNG; Mannaerts,JP; Kortan,AR; Ng,HM; Cho,AY; Anselm,KA; Lee,CM; Chyi,JI
    [電機工程研究所] 期刊論文 2002 Thermal annealing effects on stimulated emission of high-indium-content InGaN/GaN single quantum well structure Chen,CC; Hsieh,KL; Chi,GC; Chuo,CC; Chyi,JI; Chang,CA
    [電機工程研究所] 期刊論文 2001 A carrier escape study from InAs self-assembled quantum dots by photocurrent measurement Chang,WH; Hsu,TM; Huang,CC; Hsu,SL; Lai,CY; Yeh,NT; Chyi,JI
    [電機工程研究所] 期刊論文 2001 A comparative study of the passivation films on AlGaAs/GaAs heterojunction diodes and bipolar transistors Hwang,HP; Cheng,YS; Shieh,JL; Chyi,JI
    [電機工程研究所] 期刊論文 2001 Activation of p-type GaN with irradiation of the second harmonics of a Q-switched Nd : YAG laser Cheng,YC; Liao,CC; Feng,SW; Yang,CC; Lin,YS; Ma,KJ; Chyi,JI
    [電機工程研究所] 期刊論文 2001 Charging of embedded InAs self-assembled quantum dots by space-charge techniques Chang,WH; Chen,WY; Cheng,MC; Lai,CY; Hsu,TM; Yeh,NT; Chyi,JI
    [電機工程研究所] 期刊論文 2001 Comparison of GaN p-i-n and Schottky rectifier performance Zhang,APP; Dang,GT; Ren,F; Cho,H; Lee,KP; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC
    [電機工程研究所] 期刊論文 2001 Device characteristics of the GaN/InGaN-doped channel HFETs Hsin,YM; Hsu,HT; Chuo,CC; Chyi,JI
    [電機工程研究所] 期刊論文 2001 Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures Chen,CC; Hsieh,KL; Chi,GC; Chuo,CC; Chyi,JI; Chang,CA
    [電機工程研究所] 期刊論文 2001 Effects of electric field and coulomb interaction on the interband transitions of InAs self-assembled quantum dots: A study by modulation reflectance spectroscopy Chang,WH; Hsu,TM; Huang,CC; Yeh,NT; Chyi,JI
    [電機工程研究所] 期刊論文 2001 GaN electronics for high power, high temperature applications Pearton,SJ; Ren,F; Zhang,AP; Dang,G; Cao,XA; Lee,KP; Cho,H; Gila,BP; Johnson,JW; Monier,C; Abernathy,CR; Han,J; Baca,AG; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chu,SNG
    [電機工程研究所] 期刊論文 2001 Improved electroluminescence of InAs quantum dots with strain reducing layer Yeh,NT; Nee,TE; Chyi,JI; Chia,CT; Hsu,TM; Huang,CC
    [電機工程研究所] 期刊論文 2001 Improvement of diodes performance with a multiple-pair buffer layer by MOCVD Yang,CC; Wu,MC; Chi,GC; Chuo,CC; Chyi,JI
    [電機工程研究所] 期刊論文 2001 Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells Chuo,CC; Lee,CM; Chyi,JI
    [電機工程研究所] 期刊論文 2001 Laser-induced activation of p-type GaN with the second harmonics of a Nd : YAG laser Cheng,YC; Liao,CC; Feng,SW; Yang,CC; Lin,YS; Ma,KJ; Chou,CC; Lee,CM; Chyi,JI
    [電機工程研究所] 期刊論文 2001 Piezoelectric field-induced quantum-confined Stark effect in InGaN/GaN multiple quantum wells Lai,CY; Hsu,TM; Chang,WH; Tseng,KU; Lee,CM; Chuo,CC; Chyi,JI
    [電機工程研究所] 期刊論文 2001 Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots Hsu,TM; Chang,WH; Huang,CC; Yeh,NT; Chyi,JI
    [電機工程研究所] 期刊論文 2001 SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors Johnson,JW; Gila,BP; Luo,B; Lee,KP; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Ren,F
    [電機工程研究所] 期刊論文 2001 Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes Lee,CM; Chuo,CC; Dai,JF; Zheng,XF; Chyi,JI
    [電機工程研究所] 期刊論文 2001 Two-component photoluminescence decay in InGaN/GaN multiple quantum well structures Feng,SW; Cheng,YC; Liao,CC; Chung,YY; Liu,CW; Yang,CC; Lin,YS; Ma,KJ; Chyi,JI
    [電機工程研究所] 期刊論文 2001 Vertical and lateral GaN rectifiers on free-standing GaN substrates Zhang,AP; Johnson,JW; Luo,B; Ren,F; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI
    [電機工程研究所] 期刊論文 2001 Schottky rectifiers fabricated on free-standing GaN substrates Johnson,JW; LaRoch,JR; Ren,F; Gila,BP; Overberg,ME; Abernathy,CR; Chyi,JI; Chou,CC; Nee,TE; Lee,CM; Lee,KP; Park,SS; Park,YJ; Pearton,SJ
    [電機工程研究所] 期刊論文 2000 Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells Lin,YS; Ma,KJ; Hsu,C; Feng,SW; Cheng,YC; Liao,CC; Yang,CC; Chou,CC; Lee,CM; Chyi,JI
    [電機工程研究所] 期刊論文 2000 Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells Chuo,CC; Lee,CM; Nee,TE; Chyi,JI
    [電機工程研究所] 期刊論文 2000 Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer Yang,CC; Wu,MC; Chuo,CC; Chyi,JI; Lin,CF; Chi,GC
    [電機工程研究所] 期刊論文 2000 Electron distribution and level occupation in an ensemble of InxGa1-xAs/GaAs self-assembled quantum dots Chang,WH; Hsu,TM; Yeh,NT; Chyi,JI
    [電機工程研究所] 期刊論文 2000 Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers Zhang,AP; Dang,G; Ren,F; Han,J; Cho,H; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Chu,SNG
    [電機工程研究所] 期刊論文 2000 Gd2O3/GaN metal-oxide-semiconductor field-effect transistor Johnson,JW; Luo,B; Ren,F; Gila,BP; Krishnamoorthy,W; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC
    [電機工程研究所] 期刊論文 2000 High voltage GaN Schottky rectifiers Dang,GT; Zhang,AP; Ren,F; Cao,XNA; Pearton,SJ; Cho,H; Han,J; Chyi,JI; Lee,CM; Chuo,CC; Chu,SNG; Wilson,RG
    [電機工程研究所] 期刊論文 2000 Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures Yeh,NT; Nee,TE; Chyi,JI; Hsu,TM; Huang,CC
    [電機工程研究所] 期刊論文 2000 MBE growth and characterisation of InGaAs quantum dot lasers Chyi,JI
    [電機工程研究所] 期刊論文 2000 Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots Chang,WH; Hsu,TM; Huang,CC; Hsu,SL; Lai,CY; Yeh,NT; Nee,TE; Chyi,JI
    [電機工程研究所] 期刊論文 2000 Processing and device performance of GaN power rectifiers Zhang,AP; Dang,GT; Cao,XA; Cho,H; Ren,F; Han,J; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chi,GC; Chu,SNG; Wilson,RG; Pearton,SJ
    [電機工程研究所] 期刊論文 2000 Properties and effects of hydrogen in GaN Pearton,SJ; Cho,H; Ren,F; Chyi,JI; Han,J; Wilson,RG
    [電機工程研究所] 期刊論文 2000 Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region Yeh,NT; Lee,JM; Nee,TE; Chyi,JI
    [電機工程研究所] 期刊論文 2000 Spatial distribution of electrical properties in GaN p-i-n rectifiers Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC
    [電機工程研究所] 期刊論文 2000 Stimulated emission study of InGaN/GaN multiple quantum well structures Liao,CC; Feng,SW; Yang,CC; Lin,YS; Ma,KJ; Chuo,CC; Lee,CM; Chyi,JI
    [電機工程研究所] 期刊論文 2000 Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures Chen,CC; Chuang,HW; Chi,GC; Chuo,CC; Chyi,JI
    [電機工程研究所] 期刊論文 2000 Surface and bulk leakage currents in high breakdown GaN rectifiers Ren,F; Zhang,AP; Dang,GT; Cao,XA; Cho,H; Pearton,SJ; Chyi,JI; Lee,CM; Chuo,CC
    [電機工程研究所] 期刊論文 2000 Temperature dependence of GaN high breakdown voltage diode rectifiers Chyi,JI; Lee,CM; Chuo,CC; Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Chu,SNG; Wilson,RG
    [電機工程研究所] 期刊論文 2000 Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing Hsu,TM; Lan,YS; Chang,WH; Yeh,NT; Chyi,JI
    [電機工程研究所] 期刊論文 2000 Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chuo,CC; Lee,CM
    [電機工程研究所] 期刊論文 2000 Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes Hong,M; Anselm,KA; Kwo,J; Ng,HM; Baillargeon,JN; Kortan,AR; Mannaerts,JP; Cho,AY; Lee,CM; Chyi,JI; Lay,TS
    [電機工程研究所] 期刊論文 1999 Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides Chang,MN; Hsieh,KC; Nee,TE; Chyi,JI
    [電機工程研究所] 期刊論文 1999 Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n(+) structure Hwang,JS; Hwang,WC; Yang,ZP; Chang,GS; Chyi,JI; Yeh,NT
    [電機工程研究所] 期刊論文 1999 Growth and device performance of GaN Schottky rectifiers Chyi,JI; Lee,CM; Chuo,CC; Chi,GC; Dang,GT; Zhang,AP; Ren,F; Cao,XA; Pearton,SJ; Chu,SNG; Wilson,RG
    [電機工程研究所] 期刊論文 1999 Improved temperature characteristics of 1.55 mu m InAlGaAs quantum well lasers with multiquantum barrier at p-cladding layer Chyi,JI; Chen,MH; Pan,JW; Shih,TT
    [電機工程研究所] 期刊論文 1999 Role of excess As in low-temperature grown GaAs subjected to BCl3 reactive ion etching Chang,MN; Chuo,CC; Lu,CM; Hsieh,KC; Yeh,NT; Chyi,JI
    [電機工程研究所] 期刊論文 1997 Characteristics of a In-0.52(AlxGa1-x)(0.48)As/In0.53Ga0.47As(0<=x<=1) heterojunction and its application on HEMT's Chan,YJ; Wu,CS; Chen,CH; Shieh,JL; Chyi,JI
    [電機工程研究所] 期刊論文 1997 Defect study on the strain-relaxed InxAl1-xAs epilayers (x<0.4) grown on GaAs Shieh,JL; Chang,MN; Cheng,YS; Chyi,JI
    [電機工程研究所] 期刊論文 1997 Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates Shieh,JL; Chang,MN; Cheng,YS; Chyi,JI
    [電機工程研究所] 期刊論文 1997 GaAs metal-semiconductor-metal photodetectors with recessed cathodes and/or anodes Yuang,RH; Shieh,JL; Chyi,JI; Chen,JS
    [電機工程研究所] 期刊論文 1997 High thermal conductive passivation films on AlGaAs/GaAs heterojunction diodes and bipolar transistors Hwang,HP; Cheng,YS; Shieh,JL; Pan,JW; Chyi,JI
    [電機工程研究所] 期刊論文 1997 Overall performance improvement in GaAs MSM photodetectors by using recessed-cathode structure Yuang,RH; Shieh,JL; Chyi,JI; Chen,JS
    [電機工程研究所] 期刊論文 1996 Characteristics of multistack multiquantum barrier and its application to graded-index separate confinement heterostructure lasers Chyi,JI; Wang,SK; Gau,JH; Shieh,JL; Pan,JW
    [電機工程研究所] 期刊論文 1996 DC and microwave characteristics of In-0.3(AlxGa1-x)(0.7)As/In0.3Ga0.7As heterojunction bipolar transistors grown on GaAs Hwang,HP; Shieh,JL; Pan,JW; Chou,CC; Chyi,JI
    [電機工程研究所] 期刊論文 1996 Effects of finger width on large-area InGaAs MSM photodetectors Yuang,RH; Chyi,JI
    [電機工程研究所] 期刊論文 1996 Enhanced carrier and optical confinement of quantum well lasers with graded multi-quantum barriers Chyi,JI; Gau,JH; Wang,SK; Shieh,JL; Pan,JW
    [電機工程研究所] 期刊論文 1996 Enhanced device performance by unstrained In0.3Ga0.7As/In0.29Al0.71As doped-channel FET on GaAs substrates Yang,MT; Chan,YJ; Shieh,JL; Chyi,JI
    [電機工程研究所] 期刊論文 1996 GaAs-based In0.29Al0.71As/In0.3Ga0.7 as high-electron mobility transistors Chan,YJ; Wu,CS; Chyi,JI; Shieh,JL
    [電機工程研究所] 期刊論文 1996 High-responsivity InGaAs metal-semiconductor-metal photodetectors with semi-transparent Schottky contacts Yuang,RH; Chyi,JI; Chan,YJ; Lin,W; Tu,YK
    [電機工程研究所] 期刊論文 1996 High-speed GaAs metal-semiconductor-metal photodetectors with recessed metal electrodes Yuang,RH; Chien,YJ; Shieh,JL; Chyi,JI
    [電機工程研究所] 期刊論文 1996 High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield Yuang,RH; Chyi,JI; Lin,W; Tu,YK
    [電機工程研究所] 期刊論文 1996 Material properties of compositional graded InxGa1-xAs and InxAl1-xAs epilayers grown on GaAs substrates Chyi,JI; Shieh,JL; Pan,JW; Lin,RM
    [電機工程研究所] 期刊論文 1996 Reduction of hole transit time in GaAs MSM photodetectors by p-type delta-doping Chyi,JI; Chien,YJ; Yuang,RH; Shieh,JL; Pan,JW; Chen,JS
    [電機工程研究所] 期刊論文 1996 Strain relaxation and crystallographic tilt of compositional graded InxGa1-xAs and InxAl1-xAs (0<x<0.3) epilayers grown on GaAs substrates Shieh,JL; Chyi,JI; Pan,JW; Lin,RM
    [電機工程研究所] 期刊論文 1996 Theoretical study of the temperature dependence of 1.3-mu m AlGaInAs-InP multiple-quantum-well lasers Pan,JW; Chyi,JI
    [電機工程研究所] 期刊論文 1995 DOUBLE-HETEROJUNCTION PSEUDOMORPHIC ALGAAS/IN0.15GA0.85 AS HEMT AND ITS SHORT-CHANNEL EFFECTS WU,CS; CHAN,YJ; CHEN,CD; CHUANG,TM; JUANG,FY; CHANG,CC; CHYI,JI
    [電機工程研究所] 期刊論文 1995 HIGH-PERFORMANCE LARGE-AREA INGAAS MSM PHOTODETECTORS WITH A PSEUDOMORPHIC INGAP CAP LAYER YUANG,RH; SHIEH,HC; CHIEN,YJ; CHAN,YJ; CHYI,JI; LIN,W; TU,YK
    [電機工程研究所] 期刊論文 1995 HIGH-RESPONSIVITY INGAAS MSM PHOTODETECTORS WITH SEMITRANSPARENT SCHOTTKY CONTACTS YUANG,RH; CHYI,JI; CHAN,YJ; LIN,W; TU,YK
    [電機工程研究所] 期刊論文 1995 IN-0.52(AL0.9GA0.1)(0.48)AS/IN0.53GA0.47AS HEMT WITH IMPROVED DEVICE RELIABILITY WU,CS; CHAN,YJ; SHIEN,JL; CHYI,JI
    [電機工程研究所] 期刊論文 1995 LOW-THRESHOLD INALGAAS/ALGAAS STRAINED-QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY CHYI,JI; GAU,JH; SHIEH,JL; PAN,JW; CHAN,YJ; HONG,JW; HUANG,MF
    [電機工程研究所] 期刊論文 1995 SCHOTTKY-BARRIER HEIGHTS OF INXAL1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.35) EPILAYERS ON GAAS CHYI,JI; SHIEH,JL; LIN,RJ; PAN,JW; LIN,RM
    [電機工程研究所] 期刊論文 1995 STUDY OF THE OPTICAL-PROPERTIES OF IN-0.52(ALXGA1-X)(0.48)AS BY VARIABLE-ANGLE SPECTROSCOPIC ELLIPSOMETRY PAN,JW; SHIEH,JL; GAU,JH; CHYI,JI; LEE,JC; LING,KJ
    [電機工程研究所] 期刊論文 1994 BAND OFFSETS OF IN0.30GA0.70AS/IN0.29AL0.71AS HETEROJUNCTION GROWN ON GAAS SUBSTRATE SHIEH,JL; CHYI,JI; LIN,RJ; LIN,RM; PAN,JW
    [電機工程研究所] 期刊論文 1994 CHARACTERISTICS OF IN0.3GA0.7AS/IN0.29AL0.71AS HETEROSTRUCTURES GROWN ON GAAS USING INALAS BUFFERS CHYI,JI; SHIEH,JL; WU,CS; LIN,RM; PAN,JW; CHAN,YJ; LIN,CH
    [電機工程研究所] 期刊論文 1994 CHARACTERISTICS OF PSEUDOMORPHIC ALGAAS INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS YANG,MT; CHAN,YJ; CHEN,CH; CHYI,JI; LIN,RM; SHIEH,JL
    [電機工程研究所] 期刊論文 1994 HIGH UNIFORMITY OF AL0.3GA0.7AS/IN0.15GA0.85AS DOPED-CHANNEL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON 3'' GAAS SUBSTRATES CHAN,YJ; YANG,MT; YEH,TJ; CHYI,JI
    [電機工程研究所] 期刊論文 1994 LOW DARK CURRENT AND HIGH LINEARITY INGAAS MSM PHOTODETECTORS CHYI,JI; WEI,TS; HONG,JW; LIN,W; TU,YK
    [電機工程研究所] 期刊論文 1994 MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXAL1-XAS ON GAAS CHYI,JI; SHIEH,JL; LIN,RM; NEE,TE; PAN,JW
    [電機工程研究所] 期刊論文 1994 THERMAL-STABILITY OF STRAINED ALGAAS/INXGA1-XAS (0.15-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL STRUCTURES YANG,MT; LIN,RM; CHAN,YJ; SHIEH,JL; CHYI,JI
    [電機工程研究所] 期刊論文 1994 UNSTRAINED IN0.3GA0.7AS/IN0.29AL0.71AS RESONANT-TUNNELING DIODES GROWN ON GAAS HWANG,HP; SHIEH,JL; LIN,RM; CHYI,JI; TU,SL; PENG,CK; YANG,SJ

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